• Journal of the Korean Ceramic Society
• /
• v.34 no.6
• /
• pp.601-610
• /
• 1997

In cofiring of multilayered alumina with tungsten, the change of camber with lamination condition was experimented and the effect of sintering shrinkage of alumina and tungsten was investigated. From the exact measurement of sintering shrinkage of tungsten thick film, as lamination pressure increased, the sintering shrinkage of alumina decreased but that of tungsten thick film was not changed. So it was though that the main factor which induced the sintering shrinkage difference between ceramics and metal with lamination condition was the change of sintering shrinkage of ceramics. In case of high lamination pressure, high green sheet density, the cofired specimen showed low camber due to low shrinkage difference between alumina and tungsten and there was a linear relation between camber and shrinkage difference. It was found that this shrinkage difference could change the thickness of tungsten film and the microstructure within via hole during cofiring.

• Nuclear Engineering and Technology
• /
• v.45 no.1
• /
• pp.41-52
• /
• 2013

Adequate design of engineered barriers, including canister, buffer and backfill, is important for the safe disposal of high-level radioactive waste. Three-dimensional computer simulations were carried out under different condition to examine the thermal and mechanical behavior of engineered barriers and rock mass. The research looked at five areas of importance, the effect of the swelling pressure, water content of buffer, density of compacted bentonite, emplacement type and the selection of failure criteria. The results highlighted the need to consider tensile stress in the outer shell of a canister due to thermal expansion of the canister and the swelling pressure from the buffer for a more reliable design of an underground repository system. In addition, an adequate failure criterion should be used for the buffer and backfill.

• ETRI Journal
• /
• v.18 no.3
• /
• pp.181-193
• /
• 1996

A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.

• ETRI Journal
• /
• v.31 no.6
• /
• pp.642-646
• /
• 2009

Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.346-349
• /
• 2009

We investigated the doping effects of $ReO_3$ in different p-type organic semiconductors on the formation of charge transfer complexes and the electrical conductivity by comparing the absorption in ultraviolet-visible-nearinfrared (UV-Vis-NIR) and the current density-voltage characteristics of the hole only devices, respectively. The large energy difference between the HOMO level of host and Fermi energy level of dopant (${\Delta}E$=$E_{HOHO,host}$ - $E_{F,dopant}$) gives higher concentration of CT complexes and enhanced conductivity.

• Proceedings of the Korean Society of Computer Information Conference
• /
• 2014.01a
• /
• pp.353-354
• /
• 2014

무선 센서 네트워크(WSN)환경에서는 저가의 센서 노드를 구성하기 위해 배터리, 제한된 에너지 등과 같은 하드웨어적인 제약을 갖고 있다. 특히, 센서 노드의 제한된 에너지는 네트워크 수명과 직접적인 관련이 있기 때문에 네트워크의 수명을 연장하기 위한 효율적인 기법들이 요구되는 실정이다. 이를 위해 본 논문에서는 WSN환경에서 고정 노드와 모바일 노드를 혼용하여 음영지역을 최소화할 수 있는 모바일 노드 이동 기법을 제안한다. 이는 대표 노드를 선정하여 네트워크의 밀도를 제어하고 각 노드들의 거리에 따라 신호 세기를 제어한다. 이를 통해 네트워크 지역의 확장과 각 노드의 에너지를 효율적으로 사용할 수 있다.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.09a
• /
• pp.165-172
• /
• 2003

Wafer-level packaging technology has become established with increase of demands for miniaturizing and realizing lightweight electronic devices evolution. This packaging technology enables the smallest footprint of packaged chip. Various structures and processes has been proposed and manufactured currently, and products taking advantages of wafer-level package come onto the market. The package enables mounting semiconductor chip on print circuit board as is a case with conventional die-level CSP's with BGA solder bumps. Bumping technology is also advancing in both lead-free solder alternative and wafer-level processing such as stencil printing using solder paste. It is known lead-free solder bump formation by stencil printing process tend to form voids in the re-flowed bump. From the result of FEM analysis, it has been found that the strain in solder joints with voids are not always larger than those of without voids. In this paper, characteristics of wafer-level package and effect of void in solder bump on its reliability will be discussed.

• Applied Science and Convergence Technology
• /
• v.23 no.5
• /
• pp.254-260
• /
• 2014

Organic solar cells have attracted extensive attention as a promising approach for cost-effective photovoltaic devices. However, organic solar cell has disadvantage of low power conversion efficiency in comparison with other type of solar cell, due to the recombination ratio of hole and electron is too large in the active layer. Thus we have change the surface structure of PEDOT:PSS layers to improve the current density by colloidal lithography method using various-size of polystyrene sphere. The two types of coating method were applied to fabricate the different pattern shape and height, such as spin coating and drop casting. Using the organic solvent, we easily eliminate the PS sphere and could make the varied pattern shapes by controlling the wet etching time. Also we have measured the electrical properties of patterned PEDOT:PSS film to check whether it is suitable for organic photovoltaics.

• Journal of Sensor Science and Technology
• /
• v.17 no.5
• /
• pp.346-349
• /
• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• Journal of Sensor Science and Technology
• /
• v.25 no.6
• /
• pp.399-405
• /
• 2016

Scent diffuser using micro-pore piezo actuator achieved a commercial success because of its cheap production cost, but it is easy to be use for IT-based contents due to difficulty of scent intensity control. To solve this problem, we control the emission amount of scent diffuser by changing amplitude and frequency of input voltage applied to micro-pore piezo actuator. And, we analyzed the effect of density of cotton core on emission amount and a relationship between hole-size of mesh in piezo actuator and viscosity of scents to design a mechanically optimal scent device.