• Convergence Security Journal
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• v.7 no.2
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• pp.73-80
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• 2007

The fact that since Internet has been spreaded widely to people, Many security problems also have been grown too much. Due to sudden growth, administrator's responsibility for secure network and services has been growing more and more. This paper represents how to prevent account which didn't use for long period on multi domains environment using service log analysis. hence administrator can find security hole on systems and can dealing with it. The Service Log Analyzer is that loading log file which are written by each service and analyzing them. as a result it makes a list named Used User List contains a number of account names which uses specific services. When the time has come - means cron job schedule time, User Usage Shifter is the next runner. it's mission is finding the person who didn't used service for a specific period of time. Then modifying the expire day of the account information.

• Korean Journal of Materials Research
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• v.19 no.5
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• pp.240-244
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• 2009

Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of $70{\AA}$-TCTA/$90{\AA}$-$TCTA_[0.5}TPBI_{0.5}$/$90{\AA}$-TPBI doped with $Ir(ppy)_3$ of 8% and an undoped layer of $50{\AA}$-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of $300{\AA}$, $500{\AA}$, and $700{\AA}$ were used as an electron transport layer. The device with $500{\AA}$-SFC137 showed the luminance of $48,300\;cd/m^2$ at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of $230\;cd/m^2$. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.

• Elastomers and Composites
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• v.44 no.3
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• pp.290-298
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• 2009

In this paper, the Fe-activated carbon fiber (ACF)/$TiO_2$ composite catalysts were prepared by a sol-gel method. The synthesized photocatalysts were used for the photo degradation of Methylene blue solution under UV light. From Brunauer-Emmett-Teller measurements (BET) data, it was shown the blocking of the micropores on the surface of ACF by treatment of Fe and Ti compound. As shown in SEM images, the ferric compounds and titanium dioxides were fixed onto the ACF surfaces. The result of X-ray powder diffraction showed that the crystal phase contained a mixing anatase and rutile structure and the 'FeO+$TiO_2$' from the composites. The EDX spectra for the elemental analysis showed the presence of C, O, and Ti with Fe peaks. Degradation activity of MB could be attributed to +OH radicals derived from electron/hole pair's reactions due to photolysis of $TiO_2$ and photo-Fenton effect of Fe.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.299-303
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• 2015

The electrolyte is an important component in determining the performance of Fuel Cells. Especially, investigation of the conduction properties of electrolytes plays a key role in determining the performance of the electrolyte. The electrochemical properties of Yttrium stabilized zirconia (YSZ) were measured to allow the use of this material as an electrolyte for solid oxide fuel cells (SOFC) in the temperature range of $700-1000^{\circ}C$ and in $0.21{\leq}pO_2/atm{\leq}10^{-23}$. A Hebb-Wagner polarization experimental cell was optimally manufactured; here we discuss typical problems associated with making cells. The partial conductivities due to electrons and holes for 8YSZ, which is known as a superior oxygen conductor, were obtained using I-V characteristics based on the Hebb-Wagner polarization method. Activation energies for holes and electrons are $3.99{\pm}0.17eV$ and $1.70{\pm}0.06eV$ respectively. Further, we calculated the oxygen ion conductivity with electron, hole, and total conductivity, which was obtained by DC four probe conductivity measurements. The oxygen ion conductivity was dependent on the temperature; the activation energy was $0.80{\pm}0.10eV$. The electrolyte domain was determined from the top limit, bottom limit, and boundary (p=n) of the oxygen partial pressure. As a result, the electrolyte domain was widely presented in an extensive range of oxygen partial pressures and temperatures.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.130-134
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• 2015

The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.96-105
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• 2021

Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se₂ (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer growth. To avoid the degradation, it is necessary to prevent the diffusion of Zn atoms from Zn-containing buffer to CIGS film. For the purpose, we characterized an In₂Se₃ film as a possible diffusion barrier layer because In₂Se₃ has no Zn component. It was found that an In₂Se₃ layer grown at 300℃ was very effective in preventing Zn diffusion from a Zn-containing buffer. Also, the In₂Se₃ had a large potential barrier in the valence band at the In₂Se₃/CIGS interface. Therefore, In₂Se₃ passivation has the potential to achieve a super-high efficiency in CIGS solar cells that employ Cd-free ALD processed buffers containing Zn.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.