• Applied Microscopy
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• 제47권3호
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• pp.203-207
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• 2017

A homogeneous $KNbO_3$ (KN) phase was formed by sintering at $1,040^{\circ}C$ for 1 hour, without formation of the $K_2O$-deficient secondary phase even though suffering the minor loss of $K_2O$. KN liquid phase was formed during sintering and abnormal grain growth occurred in this specimen. The detailed microstructural observations on KN during sintering were carried out using high resolution transmission electron microscopy. The ledged structures were found at the KN grain boundary and the abnormal grain growth was performed by the lateral migration of these ledges in the presence of the liquid phase. The liquid pockets were found in the KN grains. They have various external shapes mainly due to the kinetic factors. They have atomically flat interfaces with some ledges with one atomic height. The slight deficient $K_2O$ by evaporation might somewhat reduce the melting point of KN from the reported at $1,058^{\circ}C$. The liquid pockets play an important role in supplying the liquid phase during the abnormal grain growth in the sintering process of KN ceramics.

• 전자공학회논문지S
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• 제35S권6호
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• pp.66-71
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• 1998

본 연구에서 피부계통의 진단에 이용될 수 있는 고해상도 영상진단기를 개발하였으며 개발된 영상진단기는 sector scanning 방식으로서 A-mode, B-mode, M-mode의 80${\mu}m$ 축방향, 250${\mu}m$ 축방향 해상도로 $5mm {\times} 5mm$의 인체 단면 영상을 초당 20frame으로 나타낸다. 이 영상장치는 대부분의 피부학(dermatology) 계통의 질환에 그 병리학적인 연구에 이용될 수 있을 뿐만 아니라 안과(ophthalmology)나 치과(odontology) 계통의 병리학적인 판단에도 도움을 줄 수 있다고 생각되며 또한 피부미용(dermato-cosmetology)을 위한 분야에도 응용 가능하다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.161.6-161
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• 2001

Confocal scanning microscopy (CSM) has an important role as the three-dimensional profiler. An image distribution can be reconstructed by a correlation analysis of spots with the bandwidth of radio frequency. But it is a serious problem for the high performance to align the optical components. Especially, the parasitic motion of focus on the detector gives rise to the fatal distortion of an image profile named the extinction effect while using acousto-optical(AO) deflector. An image profile can be regenerated in CSM with many advantages of non-contact, high speed and high resolution comparatively. In addition to the axial response of the primary focus, the lateral movement of it gives a necessity of the unitary lens to the scanning system. While using the beam deflector, the pupil of beam may be fixed at the nominal position. Furthermore, the use of a deflector may result in ...

• 한국재료학회지
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• 제28권4호
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• 한국기계가공학회지
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• 제10권2호
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• pp.104-109
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• 2011

I present a method of aspheric surface profile measurement using 2nd derivative of local area profile. This method is based on the principle of curvature sensor which measures the local 2nd derivative under test along a line. The profile is then reconstructed from the data on the each point. Unlike subaperture-stiching method and slope detection method, 2nd derivative method has strong points from a geometric point of view in measuring the aspheric surface profile. The second derivative terms of surface profile is an intrinsic property of the test piece, which is independent of its position and tip-tilt motion. The curvature is measured at every local area with high accuracy and high lateral resolution by using White-light scanning interferometry.

• 비파괴검사학회지
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• 제19권6호
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• pp.420-425
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• 1999

Time of flight diffraction(TOFD)법은 초음파의 회절현상을 이용한 검사방법으로 일반적인 pulse echo 법에 비해 검사수행 속도가 빠르며, 보다 알기 쉽게 결함을 유무를 표시하고 검사표면의 상태와 결함의 방향에 의한 검사 결과가 기존에 방법에 비해 안정적인 특징을 갖는다. 그러나 TOFD 법은 결함의 위치가 검사체의 표면 근처에 위치하는 경우 표면을 따라 전파되는 lateral wave의 영향으로 결함의 검출에 어려움이 따른다. 본 연구에서는 TOFD 법을 이용한 초음파 탐상 시스템을 개발하였고, TOFD 법의 단점이라 할 수 있는 표면 근처에 존재하는 결함을 보다 쉽게 검출하기 위하여 deconvolution 법을 사용하여 근거리 분해능을 향상시켰다.

• 센서학회지
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• 제13권6호
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• pp.430-435
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• 2004

The resolution of the accelerometer, fabricated with MEMS technology is mainly affected by mechanical and electrical noise. To reduce mechanical noise, we have to increase mass of the structure part and quality factor related with the degree of vacuum packaging. On the other hand, to increase mass of the structure part, the thickness of the structure must be increased and ICP-RIE is used to fabricate the high aspect ratio structure. At this time, footing effect make the sensitivity of the accelerometer decreasing. This paper presents a hybrid SOG(Silicon On Glass) Process to fabricate a lateral silicon accelerometer with differential capacitance sensing scheme which has been designed and simulated. Using hybrid SOG Process, we could make it a real to increase the structural thickness and to prevent the footing effect by deposition of metal layer at the bottom of the structure. Moreover, we bonded glass wafer to structure wafer anodically, so we could realize the vacuum packaging at wafer level. Through this way, we could have an idea of controlling of quality factor.

• 대한전자공학회논문지
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• 제21권4호
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• pp.65-71
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• 1984

초음파 B스캔너의 경우 광대역 펄스를 사용하기 때문에 광학에서 사용되는 집속 계산식으로는 초음파 집속 시스템을 정확하게 설계할 수 없다. 본 연구에서는 초음파 다중소자에 광대역 펄스가 여기될 때 초음파의 전파모양을 정확하게 계산할 수 있늘 방법이 연구되었다. 계간된 초음차의 전파 모양을 이용하여 고해상력을 갖는 다이나믹 집속(dynamic focusing)시스템의 구동소자수, 집속치로 지연값 및 집속점 위치등을 설계하도록 하였다. 저잡음 스튀칭 특성을 갖는 다이나믹 집속 시스템을 구성하여 실험에 의해 3.5MHz선형소자로써 18cm의 깊이까지 2∼3mm의 해상도가 얻어짐을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1033-1034
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• 2005

High resolution 2.1” QVGA LTPS LCD (190ppi) having high aperture ratio of 65% could be successfully developed using state-of-the-art SLS technology and active/gate storage structure. Cost effective P-MOS 6-Mask structure was used. Full gate and transmission gate circuits are integrated in the panel. The high aperture ratio was obtained by using active/gate capacitance structure, which can reduce storage capacitance area. The aperture ratio was increased to 65% from 49% of conventional gate/data capacitance structure. The brightness was increased from 180cd to 270cd without any degradation of optical properties such as contrast ratio, flicker or crosstalk.

• 한국음향학회지
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• 제30권4호
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• pp.215-222
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• 2011

높은 분해능의 영상을 얻는데 사용하기 위하여 초고주파 대역에서 동작하는 집속 초음파 트랜스듀서를 제작하고 그 특성을 평가하였다. 그 트랜스듀서는 한쪽 면에만 접지용 전극이 있는 두께 9 ${\mu}m$의 PVDF 압전막의 다른 쪽 면에 CCP (Copper Clad Polyimide)막을 에폭시로 접착한 후, 금속구로 압착함에 의해 구각형을 형성시키고, 그 뒷면에 에폭시를 채워 몰딩 시키는 방법에 의해 만들어졌다. 제작된 곡률반경 7.5 mm, f-number 1.7의 트랜스듀서는 초점에 있는 표적에 대한 펄스에 코 측정결과 35.0 MHz의 대역폭을 가지며, 약 40 MHz인 피크주파수 부근에서의 삽입손실은 약 60 dB 을 나타내었는데, 그 측정결과는 에폭시 접착층의 두께를 고려한 KLM 등가회로 해석에 의한 시뮬레이션 결과와 유사한 것이었다. 나아가, 그 트랜스듀서에 의해 얻어진 가는 구리선 표적에 대한 영상을 35 MHz 트랜스듀서를 장착한 UBM (Ultrasonic Backscattering Microscope) 장치에 의한 영상과 비교한 결과, 측방향 분해능은 떨어지나 축방향 분해능은 다소 향상됨을 알 수 있었다.