• Korean Journal of Chemical Engineering
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• 제35권11호
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• pp.2283-2289
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• 2018

$TiO_2$ microspheres were successfully synthesised by simple solution phase method by using various amount of titanium butoxide as precursor. The prepared $TiO_2$ were characterized by X-ray diffraction (XRD), UV-vis diffuse reflectance absorption spectra (UV-DRS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XRD analysis revealed that the as-synthesized $TiO_2$ microsphere poses an anatase phase. The photocatalytic degradation experiments were carried out with three different dyes, such as methylene blue, brilliant black, reactive red-120 for four hours under UV light irradiation. The results show that $TiO_2$ morphology had great influence on photocatalytic degradation of organic dyes. The experimental results of dye mineralization indicated the concentration was reduced by a high portion of up to 99% within 4 hours. On the basis of various characterization of the photocatalysts, the reactions involved to explain the photocatalytic activity enhancement due to the concentration of titanium butoxide and morphology include a better separation of photogenerated charge carriers and improved oxygen reduction inducing a higher extent of degradation of aromatics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• Electronic Materials Letters
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• 제14권6호
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• pp.739-748
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• 2018

ZnS nanowalls, microspheres and rice-shaped nanoparticles have been successfully grown on graphene oxide (GO) sheets by the hydrothermal method. The morphologies, structures, chemical compositions and optical properties of the as-synthesized GO/ZnS have been characterized by X-ray power diffraction, energy dispersive spectrometer, scanning electron microscope, Raman spectra, photoluminescence spectroscopy and ultraviolet-visible absorption spectroscopy. It was found that the concentration of CTAB and the reaction temperature were important in the formation of GO/ZnS microstructures. The photocatalytic activity of the as-synthesized GO/ZnS was investigated through the photocatalytic degradation of textile dyeing waste. Results showed that the catalytic activity of the GO/ZnS porous spheres to methyl orange and methylene blue is higher than those of other samples. The degradation rates of methyl orange and methylene blue by porous spheres in 50 min were 97.6 and 97.1%, respectively. This is mainly attributed to the large specific surface area of GO/ZnS porous spheres and high separation efficiency between photogenerated electron and hole pairs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• 한국진공학회지
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• 제19권4호
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• pp.307-313
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• 2010

본 연구에서는 열 화학기상증착법(thermal chemical vapor deposition)을 이용하여 분말 형태의 규소(Si)와 염화니켈 수화물 $(NiCl_2{\cdot}6H_2O)$을 혼합한 후 탄소공급원인 $CH_4$ 가스를 주입하여 탄화규소 나노선(SiC nanowire)을 합성하였다. 합성 온도와 $CH_4$ 가스 유량 변화에 따른 탄화규소 나노선의 구조적 특성을 분석한 결과, 합성온도가 $1,400^{\circ}C$, $CH_4$ 가스의 유량이 300 sccm인 경우가 탄화규소 나노선의 합성에 최적화된 조건임을 라만 분광법(Raman spectroscopy)과 X-선 회절(X-ray diffraction), 주사전자현미경(scanning electron microscopy), 그리고 투과전자현미경(transmission electron microscopy) 분석을 통해 확인하였다. 합성된 탄화규소 나노선의 직경은 약 50~150 nm이며, 곧은 방향성과 높은 결정성을 가지는 입방구조(cubic structure)를 지니고 있었다.

• 한국재료학회지
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• 제9권7호
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• pp.707-714
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• 1999

형광등으로 사용되는 전기 에너지의 40%를 절약할 수 있는 방법으로서 그 반사값을 특수 은 반사박막으로 처리하여 고효율 및 내구성을 갖는 기술이 최근에 알려지고 있다. 이 박막들은 sputtering법을 이용한 것으로 주로 미국에서 생산되어지고 있다. 한편. evaporation 법으로 제작된 은 박막들은 일반적으로 반사효율에는 별문제가 없으나 부착력이 떨어지는 단점이 있다. 우리는 수년간 polyester를 기판으로 하고 몇가지 PVB 방법을 동원하여 고 반사율 및 부착력을 갖는 은경 박막을 확보하기 위해 연구를 해왔다. 그 결과, evaporation 법으로 제작된 은 박막은 96.4%의 반사율을 보이나 부착력은 $12 Kg/\textrm{cm}^2$에 불과함을 확인하였고. sputter 법으로 제작한 시편들의 반사율은 96.3 %로 비슷하였으나 부착력이 /$20 Kg\textrm{cm}^2$로 거의 두배로 뛰어올라 sputter법의 공정조건이 그 결과박막들의 물리적 특성에 미치는 긍정적 영향을 확인할 수 있었다. X-선 회절 분석결과 sputter의 경우에 (111)면이 우선성장함을 알 수 있었고, 시편의 단면으로부터 관찰된 치밀한 columnar 구조가 부착력을 향상시키고 있음이 확인되었다.

• 한국재료학회지
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• 제18권6호
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• 한국방사선학회논문지
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• 제11권7호
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• pp.547-553
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• 2017

현재 의료분야에서는 방사선 차폐체로서 납(Pb)이 널리 쓰이고 있다. 하지만 납은 무게가 매우 무거워 납치마 등의 방호복은 장시간 착용이 어려우며, 인체에 치명적인 납 중독의 위험이 상시 가지고 있다는 문제점을 가지고 있다. 이러한 문제점을 해결하고자 납을 대체 할 수 있는 물질에 대한 많은 연구가 진행되고 있다. 현재 납의 대체물질로써 대표적인 바륨(Ba)과 요오드(I) 등은 우수한 차폐능을 가지고 있지만, 30keV 근처의 에너지 영역에서 특성 X선을 방출하는 특성을 가지고 있다. 환자나 방사선 종사자의 경우 차폐체를 인체에 접촉하고 있는 경우가 많으므로 차폐체에서 발생되는 특성 X선이 인체에 직접 조사되어 방사선 피폭을 증가시킬 위험이 매우 높다. 본 연구에서는 바륨(Ba)과 요오드(I)등에서 발생되는 특성 X선을 제거하기에 적절한 이중구조 차폐체를 방사선 수송코드 중 하나인 FLUKA 수송코드를 개발하여 선행연구로서 진행된 MCNPX 시뮬레이션과 비교 분석하여 이중구조 차폐체의 차폐율에 대한 신뢰성을 검증하고자 하였다. MCNPX와 FLUKA를 이용하여 황산바륨($BaSO_4$)과 산화비스무스($Bi_2O_3$)로 이루어진 다양한 두께조합의 이중구조 차폐체를 설계하였으며, IEC61331-1에 제시된 모식도를 기하학적으로 동일하게 시뮬레이션 상에 구현하였다. 또한, 120 kVp의 연속 X선 스펙트럼에 대한 차폐체의 투과스펙트럼과 흡수선량을 납과 비교 평가하였다. 평가결과, $0.3mm-BaSO_4/0.3mm-Bi_2O_3$ 와 $0.1mm-BaSO_4/0.5mm-Bi_2O_3$ 구조에서는 33 keV와 37 keV의 특성 X선을 모두 흡수하였으며, 90 keV 이상의 고에너지 X선에 대해서도 납과 거의 유사한 차폐효율을 보였다. 또한, FLUKA의 수송코드는 33 keV 이하에서는 cut-off 가 발생하여 저에너지 X선 광자에 대한 전산모사에 제약이 있지만, 40 keV 이상의 고에너지 영역에서 MCNPX와의 상대오차가 6 % 이내로 신뢰성이 매우 우수하다는 것을 확인할 수 있었다.