• 한국재료학회지
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• 제25권6호
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• pp.288-292
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• 2015

New lead-free piezoelectric ceramics $0.96[\{Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}\}_{1-x}La_x(Ti_{1-y}Nb_y)O_3]-0.04SrTiO_3$ (BNKT-ST-LN, where $x=y=0.00{\leq}(x=y){\leq}0.015)$ were synthesized using the conventional solid-state reaction method. Their crystal structure, microstructure, and electrical properties were investigated as a function of the La and Nb (LN) content. The X-ray diffraction patterns revealed the formation of a single-phase perovskite structure for all the LN-modified BNKT-ST ceramics in this study. The temperature dependence of the dielectric curves showed that the maximum dielectric constant temperature ($T_m$) shifted towards lower temperatures and the curves became more diffuse with an increasing LN content. At the optimum composition (LN 0.005), a maximum value of remnant polarization ($33C/cm^2$) with a relatively low coercive field (22 kV/cm) and high piezoelectric constant (215 pC/N) was observed. These results indicate that the LN co-modified BNKT-ST ceramic system is a promising candidate for lead-free piezoelectric materials.

• Advances in materials Research
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• 제2권2호
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• pp.77-91
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• 2013

High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.322-322
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• 2008

Low-temperature co-fired ceramics (LTCC) have turned out to be very promising technology in accordance with the rapid developments in semiconductor technology. The demands for compact electrical assemblies, smaller power loss as well as high signal density can be fulfilled by LTCC. And for the multi-layered ceramic devices with embedded passive components such as high dielectric constant decoupling capacitor, LTCC materials require the several conditions to avoid delamination and internal cracks. For the present study, diopside-based glass is chosen as the LTCC substrate material in view of its high coefficient of thermal expansion (CTE). From the experimental resultsn the influence of each element on the CTE change can be revealed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• 한국세라믹학회지
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• 제25권6호
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• pp.671-676
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• 1988

Preparation of high purity ultrafine Ba2Ti9O20 powder was investigated by coprecipitation method. Formation of Ba2Ti9O20 powder from precipitate of coprecipitation takes place at 120$0^{\circ}C$, which is 20$0^{\circ}C$ lower than that from mechanical mixtures of BaCO3 and TiO2. This is apparently due to the nature of the compounds formed by the reaction of mixtures of aqueous solutions of BaCl2 and TiCl4 with an ammoniacal solution of ammonium carbonate and ammouium hydroxide. In this method, the Ba2Ti9O20 powders show low callcining and sintering temperature and it has good sintering and dielectric constant at room temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1487-1488
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• 2011

Electrical properties and microstructure were investigated on the effects of $MnO_2$ and the lead-free $(Na_{0.44}K_{0.52}Li_{0.04})(Nb_{0.83}Sb_{0.07}Ta_{0.1})O_3$ ceramics with the addition of $MnO_2$ were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of $MnO_2$ addition. For the NKN-LST-xmol%$MnO_2$ sintered at $1100^{\circ}C$, bulk density increased with the addition of $MnO_2$ and showed maximum value at addition 1.0mol% of $MnO_2$. Curie temperature of the NKN-LST ceramics slightly decreased with adding $MnO_2$. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased below 0.25mol% of $MnO_2$ addition, which might be due to the increase in density. The high piezoelectric properties = 145 pC/N, electromechanical coupling factor = 0.421 and dielectric constant = 2883 were obtained for the NKN-LST-0.25mol%$MnO_2$ sintered at $1100^{\circ}C$ for 4h.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권7호
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• pp.344-348
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• 2006

The effect of x on microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics for microwave components were investigated. All spcecimens prepared by the conventional mixed oxied method and sintered at $1450^{\circ}C$. Microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-xTiO_2$ ceramics were influenced by $MgTi_2O_5$ phase. Also the microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were dominated with an addition of $CaTiO_3\;and\;SrTiO_3$. The dielectric constant $(\varepsilon_r)$, quality factor $(Q{\times}f_r)$ and temperature coefficient of the resonant frequency $(TCRF,\;\tau_f)$ of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were $12.96\sim70.98,\;5,132\sim186,410GHZ$ and $-35.82\sim+75.96ppm/^{\circ}C$, respectively, and depend on x and addition materials.

• 전기학회논문지P
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• 제57권2호
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• pp.140-145
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• 2008

The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, ${\beta}-PVF_2$) organic thin films using the vapor deposition method. Vapor deposition was performed under the following conditions: the temperature of evaporator, the applied electric field, and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm, and $2.0{\times}10^{-5}\;Torr$, respectively. The molecular structure of the evaporated organic thin films were evaluated by a FT-IR. The results showed that the characteristic absorption peaks of $\beta$-form crystal increase from 72% to 95.5% with an increase in the substrate temperature. In the analysis of the electric characteristics, the abnormal increases in the relative dielectric constant and the dielectric loss factor in the regions of low frequency and high temperature are known to be caused by inclusion of impurity carriers in the PVDF organic thin films. In order to analyze quantitatively the abnormalities in the conductivity mechanism caused by ionic impurities, the product of the ion density and the mobility that affect the electrical property in polymeric insulators is analyzed. In the case of a specimen produced by varying the substrate temperature from $30^{\circ}C$ to $105^{\circ}C$, the product of mobility and the ion density decreased from $4.626{\times}10^8$ to $8.47{\times}10^7/V{\cdot}cm{\cdot}s$. This result suggests that the higher the substrate temperature is maintained, the better excluded the impurities are, and the more electrically stable material can be obtained.

• 마이크로전자및패키징학회지
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• 제6권3호
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• pp.25-35
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• 1999

저온동시소성 또는 금속상 저온동시소성 기술은 세라믹 다층멀티칩 기술의 하나로 이 기술을 이용한 모듈은 일반 전기 부품, 고주파 및 자동차 전장에 적용되기 시작하였다. 고온동시소성 기술과 비교하여 저온동시소성 기판의 소성은 그 온도가 $1000^{\circ}C$ 이하에서 이루어지므로 전기전도도가 높은 금, 은, 구리 등의 금속을 이용하여 내부 전극을 형성할 수 있다. 금속상 저온 동시소성 기술은 소성 후의 치수안정성 (x-, y- 방향으로 수축률 0.1 % 이하)의 장점으로 모듈 내부에 수동소자를 내장할 수 있으며, 이러한 장점은 전기적 특성의 향상과 신뢰성 증가를 가져온다. 모듈의 열팽창계수 및 유전율은 조성이나 소성조건을 바꾸어 조정이 가능하다. 본 기술해설에서는 저온동시소성 또는 금속상 저온동시소성 기술에 관한 소개와 장점에 대하여 설명하였다.

• 센서학회지
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• 제13권3호
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• pp.182-187
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• 2004

The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.