• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.869-875
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• 1997

Bi based superconducting thin films were fabricated by 4-target RF magnetron sputtering using the method of controlling the on-off time. These thin films showed better crystal structures. The ratio of Cu/Bi decreased but the critical temperature increased with increasing the temperature of the substrate. High temperature phase low temperature of the substrate. High temperature phase low temperature phase and semiconducting phase can be formed by controlling the on-off time of the shutter respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.329-331
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• 1995

Laser ablation was used to fabricate superconducting $YBa_2Cu_3O_{7-x}$ (YBCO) thin films on metallic substrates with an YSZ buffer layer. An ArF excimer laser with an wavelength of 193 nm was used to deposit both YSZ buffer layer and superconducting thin film. The characterizations of thin films were performed and compared. With a 200 nm YSZ buffer layer, c-axis orientation and $T_c$=85 K were obtained for a 200 nm-thick YBCO film.

• 한국세라믹학회지
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• 제33권3호
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• pp.313-320
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• 1996

We have fabricated an in-plane aligned a-axis oriented YBa2Cu3O7-x (a-YBCO) thin film on a LaSrGaO4(100) substrate with a PrBa2Cu3O7-x(PBCO) template layer by two step plused laser deposition using 308 nm XeCl excimer laser. A YBCO layer and PBCO layer grown at low temperatures were used as template layers. We have investigated the effect of the deposition temperature of template layers on the superconducting and struc-tural properties of in-plane aligned a-YBCO thin films. An optimal deposition temperature of the PBCO template layers was 630. In-plane aligned a-YBCO thin films showed an anisotropy ratio in resistivity of 11.5 and a zero resistance temperature of 88 K.

• 한국표면공학회지
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• 제29권5호
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• pp.430-436
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• 1996

We have grown superconducting thin films on various substrates using a pulsed laser deposition (PLD) method. $YBa_2Cu_3O_7-\delta$ (YBCO) superconducting thin films with the superconducting transition temperature ($T_{c. offset}$) of 87K were grown on Si substrates using yittria-stabilized zirconia (YSZ) and $CeO_2$ double buffer layers. We have developed a large area pulsed laser deposition system. The system was designed to deposit up to 6 different materials on a large area substrate up to 7.5cm in diameter without breaking a vacuum. The preliminary runs of the deposition of YBCO superconducting thin films on $SrTiO_3$ substrate using this system showed a very uniform thickness profile over the entire substrate holder area. $T_{c}$ of the deposited YBCO thin film, however, was scattered depending on the position and the highest value was 85K.

• 수산해양기술연구
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• 제30권4호
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• pp.350-356
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• 1994

We have prepared superconducting Bi-Pb-Sr-Ca.Cu-O thin films by RF magnetron sputtering technique, on heated MgO(100) substrates. Sputtering was carried out in a mixture of argon and oxygen(10%) and the pressure was maintained at 5 mTorr during deposition. The substrate temperature was maintained $400^{\circ}C$ during deposition. The films sputtered were amorphous and insulating. All the films became superconducting by annealing, The films annealed at $880^{\circ}C$ for 30 minutes in air showed high-Tc phase with zero resistivity of 93K. These results indicate that the growth of the high-Tc phase is promoted by the presence of Pb at annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• 한국초전도ㆍ저온공학회논문지
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• 제15권3호
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• pp.5-8
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• 2013

We have studied Hall effect for potassium (K)-doped $BaFe_2As_2$ superconducting thin films by analyzing the relation between the longitudinal resistivity (${\rho}_{xx}$) and the Hall resistivity (${\rho}_{xy}$). The thin films used in this study were fabricated on $Al_2O_3$ (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~$10^{-6}$ Torr. The samples showed the high superconducting transition temperatures ($T_c$) of ~ 40 K. The ${\rho}_{xx}$ and the ${\rho}_{xy}$ for K-doped $BaFe_2As_2$ thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of $100A/cm^2$ and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ${\rho}_{xx}$and the ${\rho}_{xy}$ to investigate Hall scaling behavior on the basis of the relation of ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$. The ${\beta}$ values are $3.0{\pm}0.2$ in the c-axis-oriented K-doped $BaFe_2As_2$ thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower ${\beta}$ than that of c-axis-oriented thin films. Interestingly, the ${\beta}$ value is decreased with increasing magnetic fields.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.287-290
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• 2003

For microwave device applications, c-axis oriented high temperature superconducting YBa$_2$Cu$_3$O$_{7-{\delta}}$ (HTS-YBCO) epitaxial thin films on the r-cut sapphire substrate(Al$_2$O$_3$) were prepared. In order to reduce the lattice mismatch with a substrate and to enhance the crystallity of HTS thin films, CeO$_2$ buffer layer on the r-cut sapphire substrate was grown by the RF-magnetron sputtering. The YBCO films on the CeO$_2$ buffer layer were deposited using the pulsed-laser deposition (PLD) method. These HTS YBCO /CeO$_2$/Al$_2$O$_3$ multilayer thin films(30 $\times$ 30 mm$^2$) routinely exhibited a critical temperature(T$_{c}$) of 89 K from the R-T measurement. Using HTS YBCO/CeO$_2$ /Al$_2$O$_3$ multilayer thin film. We fabricated and characterized the microwave passive devices (planar type filters) with cryopack-age such as the coupled -line type low-pass filter (LPF) and the open-loop meander type bandpass filter (BPF).filter (BPF).).

• 한국초전도ㆍ저온공학회논문지
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• 제7권1호
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• pp.13-16
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• 2005

High temperature superconductor, $\YBa_2Cu_3O_{7-x}$ (YBCO) and ferroelectric, $\Ba_{0.1}Sr_{0.9}TiO_{3}$ (BST) multilayer thin films were deposited using on MgO(100) substrates pulsed laser deposition. The thin films exhibited only (001) peaks of YBCO and 1357 The HTS thin films demonstrated excellent zero resistance temperature of 92.5 K. We designed and fabricated HTS ferroelectric phase shifter using high frequency system simulator and standard photolithography method, respectively The HTS phase shifter shows a low insertion loss (2.97 dB) and large phase change ($\162^{circ}$) with 40 V do bias at 10 GHz. The HTS phase shifter shows 54 of figure of merit. These results can be applicable to phased anay antenna system for satellite communication services.

• Progress in Superconductivity
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• 제12권1호
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• pp.32-35
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• 2010

Potassium doped $BaFe_2As_2$ superconducting thin films by using an ex situ pulsed laser deposition technique were fabricated in various conditions to find out an optimal growth condition. Controlled conditions were annealing temperature, annealing time, and mass of potassium. The $Ba_{1-x}K_xFe_2As_2$ thin films which has most good quality is fabricated at a condition of annealing temperature at $700^{\circ}C$, annealing time of 60 minutes, and 0.6 g of potassium lumps. In this condition we were able to fabricate good quality films with high transition temperature of ~ 39 K.