• Journal of Institute of Control, Robotics and Systems
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• v.7 no.2
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• pp.117-124
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• 2001

In a SRM drive, the on/off angles of each phase switch should be accurately controlled in order to control to torque and speed in a stable way, The accuracy of the switching angles is dependent upon the resolution of the encoder and the sampling period of the microprocessor. However, as the speed increase, the amount of the switching angle deviation from the preset values is also increased by the sampling period of the microprocessor. Therefore, a low cost encoder suitable for a practical and stable SRM drive is proposed and the control algorithm to provide the switching signals using the simple digital logic circuit is also presented in this paper. It is verified from the experiments that the proposed encoder and logic controller can be a powerful candidate a the practical low cost SRM drive.

• Journal of Information Display
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• v.2 no.3
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• pp.32-38
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• 2001

The most important parameter for TV application of LCD is a fast switching time for the display of moving image. To achieve faster switching time, the novel LC single materials with large dielectric anisotropies ($16{\sim}20$), high clearing temperatures ($195.5{\sim}237.4^{\circ}C$), broad nematic ranges (up to 169.9 $^{\circ}C$) and high birefringence ($0.254{\sim}0.2200$) were developed. KUR-series LC mixtures blended these single materials having significantly higher clearing temperatures and dielectric anisotropy values compared with conventional LC mixture. Especially, their clearing temperatures are $10{\sim}30^{\circ}C$ higher than their host mixture. These LC mixtures showing about lOms of high-speed switching time in Tv/Monitor of TFT LCD, is short enough to be addressed in a single time frame of 60Hz (16.7 ms). The threshold voltage $V_{th}$ was low enough to operate at a driving voltage of 5 V. The VHR values were found to be high enough for TFT-LCD in wide temperature range. Our novel LC mixtures are suitable materials for the inclusion in to LC mixtures for TV application of TN-LCD

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.37-43
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• 1999

Modules of the system that requires large capacity and high-speed information processing are implemented in the form of MCM that allows high-speed data processing, high density circuit integration and widely applied to such fields as ATM, GPS and PCS. Hence we developed the ATM switching module that is consisted of three chips and 2.48 Gbps data throughput, in the form of 10 multi-layer by Cu/Photo-BCB and 491pin PBGA which size is $48 \times 48 \textrm {mm}^2$. hnologies required for the development of the MCM includes extracting parameters for designing the substrate/package through the interconnect characterization to implement the high-speed characteristics, thermal management at the high-density MCM, and the generation of the testability that is one of the most difficult issues for developing the MCM. For the development of the ATM Switching MCM, we extracted signaling delay, via characteristics and crosstalk parameters through the interconnect characterization on the MCM-D. For the thermal management of 15.6 Watt under the high-density structure, we carried out the thermal analysis. formed 1.108 thermal vias through the substrate, and performed heat-proofing processing for the entire package so that it can keep the temperature less than $85^{\circ}C$. Lastly, in order to ensure the testability, we verified the substrate through fine pitch probing and applied the Boundary Scan Test (BST) for verifying the complex packaging/assembling processes, through which we developed an efficient and cost-effective product.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.543-547
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• 2000

Power factor and harmonics are increasingly important for high speed train auxiliary block. This paper presents experimental results of the power factor and harmonic performance of two parallel PWM circuits under various supply and load conditions. For reducing harmonics the harmonic content is eliminated by the phase shift between two converters switching phase. Experimental results show the usefulness of the proposed method and applicability to PWM converter in auxiliary block of high speed train.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.274-277
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• 2000

Power factor and harmonics are increasingly important for high speed train auxiliary block. This paper presents experimental results of the power factor and harmonic performance of four parallel PWM converter circuits under various supply and load conditions. For reducing harmonics the harmonic content is eliminated by the phase shift between four converters switching phase. Experimental results show the usefulness of the proposed method and applicability to PWM converter in auxiliary block of high speed train.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.157-159
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• 2006

This study used by high speed DSP for more developing capability of inverter GMA welding machine. It also is designed by high speed DSP GMA welding system for real time control and improve of welding capability throught the switching frequency control by using of high speed DSP.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.239-242
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• 2005

A high speed address recovery technique for AC plasma display Panel(PDP) is proposed. By removing the GND switching operation, the recovery speed can be increased and switching loss due to GND switch also becomes to be reduced. The proposed method is able to perform load-adaptive operation by controlling the voltage level of energy recovery capacitor, which prevents increasing inefficient power consumption caused by circuit loss during recovery operation. Thus, the technique shows the minimum address power consumption according to various displayed images, different from Prior methods operating in fixed mode regardless of images. Test results with 50" HD single-scan PDP(resolution = 1366$\times$768) show that less than 350ns of recovery time is successfully accomplished and about 54% of the maximum power consumption can be reduced, tracing minimum power consumption curves.

• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1193-1198
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• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.885-892
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• 2017

In this paper, we proposed a novel crowbar circuit for high-speed discharge charge switching to solve discharge charge-time delay of supply voltage in the conventional crowbar circuit. The proposed circuit is designed to increase the charge-speed after high-speed discharge of supply voltage, thereby reducing the time exposed to radiation damage and, the normal operation time of electronic system after passing the pulse radiation. The simulation of the discharge charge-times before the implement of the hardware is conducted using Cadence's pspice tool, and DUT (Device Under Test) board is fabricated in the device level. The comparison measurement of the crowbar circuits is performed on the satellite-electronic device for 24V. As the result, we confirmed the high-speed function of the proposed circuit by improvement of the discharge-speed 96.8% and the charge-speed 27.3% as compared with the conventional circuit.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.14-21
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• 2004

It is essential to increase the switching speed of power devices to reduce the energy loss because high frequency is commonly used in power device operation these days. In this work electron irradiation has been conducted to reduce the lifetime of minority carriers and thereby to increase the switching speed of a$p^+- n^-$ junction diode. Effects of electron irradiation on the electrical properties of the diode are reported The switching speed is effectively increased. Also the junction leakages and the forward voltage drop which are anticipated to increase are found to be negligible in the $p^+- n^-$ junction diodes irradiated with the optimum energy and dose. The analysis results of DLTS and C-V profiling indicate that the defects induced by electron irradiation in the silicon substrate are donor-like ones which have the energy levels of 0.284 eV and 0.483 eV. Considering all the experimental results in this study, it might be concluded that electron irradiation is a very useful technique in improving the switching speed and thereby reducing the energy loss of $p^+- n^-$ junction diode power devices.