• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.5
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• pp.443-450
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• 2000

A PWM inverter for an induction motor often has a problem with a high frequency leakage current that flows through stray capacitors between stator windings and a motor frame to ground. This paper proposes a new type of Active Common Mode Voltage Canceler circuit for the reduction of common mode voltage and high frequency leakage current generated by the PWM VSI-fed induction motor drives. The compensating voltage applied by the common made voltage canceler has the same amplitude as, hut the opposite polarity to, the common mode voltage by PWM Inverter. Therefore, common mode voltage and high frequency leakage current can be canceled. The proposed circuit consists of four-level half-bridge inverter and common-mode transformer. Simulated and experimental results show that common mode voltage canceler makes significant contributions to reducing a high frequency leakage current.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.377-384
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• 2009

In this paper, leakage current sensing module of SoC(System on Chip)type and real time monitoring system under consideration of electromagnetic interface in power trunk line are developed. The first, leakage current sensing module of SoC type under consideration of electromagnetic interface is developed, and the developed sensing module of SoC type is composed of leakage sensing part, power supply part, interface part, communication part, AD(Alternating current to Direct current)convert part and amplification part. And also the electromagnetic compatibility is evaluated by conduction and radiation of EMI(Electromagnetic Interference) for developed sensing module. The developed system can have confidence, stability and do energy saving under mixed electric circumstance of the low voltage communication device and high voltage equipment. The second, the real time remote monitoring system is developed using designed wire and wireless communication module with leakage current sensing module of SoC type. The developed real time remote monitoring system can monitor sensing state, occurrence state of leakage current and alarm for each step etc.. And the device configuration, PCB layout for leakage current sensing module of system on chip type and the experiment configuration in consideration of EMI are presented. Also the measurement results of conduction and radiation for EMI are presented.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.104-107
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• 2018

In this paper, we developed a sensor for monitoring the leakage current through the chassis of the robot. The leakage current sensor needs to be developed because it is a necessary part to prevent electric shock accidents that may occur through the chassis of a robot or an electric vehicle. This leakage monitoring sensor was developed to be mounted directly on the chassis of the robot. This sensor protects the control system from noise by discharging static and high-frequency noise that may occur in the chassis of the robot and monitors the leakage current by measuring the amount of current discharged through the ground. In this paper, a leakage monitoring sensor was developed with a simple structure using resistors, capacitors and OP-AMP, and the performance was evaluated.

• Current Applied Physics
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• v.18 no.11
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• pp.1415-1421
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• 2018

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

• Proceedings of the IEEK Conference
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• summer
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.240-248
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• 2009

Moore's law has driven silicon technology scale down aggressively, and it results in significant increase of leakage current on nano-meter scale CMOS. Especially, in mobile devices, leakage current has been one of designers' main concerns, and thus many studies have introduced low power methodologies. However, there are few studies to minimize implementation cost in the mixed use of the methodologies to the best of our knowledge. In this paper, we introduce industrial applications of low power design methodologies for the decrease of leakage current. We focus on the design cost reduction of power gating and reverse body bias when used together. Also, we present voltage scale as an alternative to reverse body bias. To sustain gate leakage current, we discuss the adoption of high-$\kappa$ metal gate, which cuts gate leakage current by a factor of 10 in 32 nm CMOS technology. A 45 nm mobile SoC is shown as the case study of the mixed use of low power methodologies.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.142-147
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• 2018

Private electrical facilities are judged whether it is suitable for the insulation aging condition of their incoming underground cables using DC leakage current test method. In the case where the service point of utility is the secondary side of cut out switch installed in the electric pole, there is a problem that it is difficult to separate the lightning arresters(LA) because of their high position of the pole. Therefore, the field test voltage is applied at value lower than DC 30 kV, which are stated in the inspection guideline. However, this test could reduced the insulation performance of the LA by accelerating the electrical stress of the metal oxide varistor element in the pre-breakdown region. In this study, we analyzed the relationship between the DC test voltage and the leakage current using the non-destructive DC high voltage equipment with leakage current measurement function. The results show that the leakage current increases sharply above the specified test voltage. As a consequence, it could be contributed to improve insulation aging inspection method by selecting the possible test area on the VI characteristic curve of the pre-breakdown area of the LA.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1668-1670
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• 2003

This paper deals with a development of the high precise measuring device of resistive leakage current for the deterioration and diagnosis of ZnO arresters. The resistive leakage current increasing with time leads to a thermally unstable state that may even experience a disaster. So, the resistive leakage current can be used as an indicator to discriminate whether the ZnO arrester blocks is in good state or in bad. The resistive leakage current measuring system with an analysis program operated with micro-processor using the time delay addition method was designed and fabricated. The proposed measuring systems for the resistive leakage current can effectively be used to develop the techniques of forecasting the deterioration of ZnO arresters in electric power systems.⨀ᔌ?؀㔳㤮㈻Ԁ䭃䑎䷗ᜒं6〰Ԁ䭃䑎䴀

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.111-116
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• 2001

Poly-Si TFT's(Polysilicon thin filmtransistors) have been actively studied due to their applications in active matrix liquid crystal displays and active pull-up devices of CMOS SRAM's. For such applications, the leakage current has to be in the range of sub-picoampere. However, poly-Si TFT's suffer from anomalous high leakage currents, which is attributed to the emission of the traps present at gain boundaries in the drain junction. The leakage current has been analyzed by the field emission via grain-boundary traps and thermionic field emission over potential barrier located at the grain boundary. We found that the models proposed before are not consistent with the experimental results at far as drain-offset poly-Si TFT's we fabricated concern. In this paper, leakage current of drain-offset poly-Si TFT's with different offset lengths was studied. A conduction model based on the thermionic emission of the tunneling electrons is developed to identify the leakage mechanism. It was found that the effective grain size of the drain-offset region is important factor in the leakage current. A good agreement between experimental and simulated results of the leakage current is obtained.

• Journal of Radiation Protection and Research
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• v.43 no.4
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• pp.131-136
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• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.