• 제목/요약/키워드: High frequency leakage current

검색결과 136건 처리시간 0.029초

UHF RFID 응용을 위한 NMOS 게이트 교차연결 전류미러형 브리지 정류기의 설계 및 해석 (Design and Analysis of a NMOS Gate Cross-connected Current-mirror Type Bridge Rectifier for UHF RFID Applications)

  • 박광민
    • 대한전자공학회논문지SD
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    • 제45권6호
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    • pp.10-15
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    • 2008
  • 본 논문에서는 UHF RFID 응용을 위한 새로운 NMOS 게이트 교차연결 전류미러형 브리지 정류기를 제시하였다. 제시된 정류기의 직류 변환 특성은 고주파 등가회로를 이용하여 해석하였으며, 주파수 증가에 따른 게이트 누설전류를 회로적인 방법으로 줄일 수 있는 게이트 커패시턴스 감소 기법을 이론적으로 제시하였다. 구해진 결과, 제안한 정류기는 기존의 게이트 교차 연결형 정류기와 거의 같은 직류 출력전압 특성을 보이면서도, 게이트 누설전류가 1/4 이하로 감소하고, 부하저항에서의 소비전력도 30% 이상 감소하며, 부하저항의 변화에 대해 보다 안정적인 직류전압을 공급함을 알 수 있었다. 또한 제안한 정류기는 13.56MHz의 HF(for ISO 18000-3)부터 915MHz의 UHF(for ISO 18000-6) 및 2.45GHz의 마이크로파 대역 (for ISO 18000-4)까지의 전 주파수 범위에 대해 충분히 높고 잘 정류된 직류 변환 특성을 보여 특정 주파수 대역을 사용하는 다양한 RFID 시스템의 트랜스폰더 칩 구동을 위한 범용 정류기로 사용될 수 있다.

플라즈마 표면 처리가 $BaTa_2O_6$박막의 전기적 특성에 미치는 효과에 관한 연구 (Influences of Plasma Treatment on the Electrical Characteristics of rf-magnefrom sputtered $BaTa_2O_6$ Thin Films)

  • 김영식;이윤희;주병권;성만영;오명환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권5호
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    • pp.319-325
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    • 1999
  • Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

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Optimized Hybrid Modulation Strategy for AC Bypass Transformerless Single-Phase Photovoltaic Inverters

  • Deng, Shuhao;Sun, Yao;Yang, Jian;Zhu, Qi;Su, Mei
    • Journal of Power Electronics
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    • 제16권6호
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    • pp.2129-2138
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    • 2016
  • The full-bridge inverter, widely used for single-phase photovoltaic grid-connected applications, presents a leakage current issue. Therefore, an AC bypass branch is introduced to overcome this challenge. Nevertheless, existing modulation strategies entail drawbacks that should be addressed. One is the zero-crossing distortion (ZCD) of the AC current caused by neglecting the AC filter inductor voltage. Another is that the system cannot deliver reactive power because the AC bypass branch switches at the power frequency. To address these problems, this work proposes an optimized hybrid modulation strategy. To reduce ZCD, the phase angle of the inverter output voltage reference is shifted, thereby compensating for the neglected leading angle. To generate the reactive power, the interval of the negative power output is calculated using the power factor. In addition, the freewheeling switch is kept on when power is flowing into the grid and commutates at a high frequency when power is fed back to the DC side. In this manner, the dead-time insertion in the high-frequency switching area is minimized. Finally, the performances of the proposed modulation strategy and traditional strategies are compared on a universal prototype inverter. Experimental results validate the theoretical analysis.

고역통과 필터 및 FFT를 이용하여 아크감지 알고리즘 검증 (Verification of Algorithm for Arc Detection Using High Pass Filter and FFT)

  • 윤민호;조유정;김경탁;임성훈
    • 한국전기전자재료학회논문지
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    • 제36권5호
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    • pp.520-524
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    • 2023
  • An algorithm was developed to detect and block serial arc currents using HPF. The AC series arc problem is that the load current is greater than the fault current and no leakage current occurs. As a solution, an arc detection method utilizing differences in high- frequency amplitudes was developed. HPT was applied to the load current and FFT was applied to eliminate low frequencies. An algorithm has been developed to detect arc waveforms when they exceed a certain value compared to the average of normal waveforms. Using one cycle of data, arc detection is faster and arc accidents are prevented.

고주파전류센서를 이용한 고분자애자의 표면방전 평가 (Assement of Surface Discharge for Polymer Insulator using High Frequency Current Transformer)

  • 박재준
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.1985-1987
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    • 2004
  • Investigation of surface discharge characteristics of surface leakage on polluted EPDM insulatora have been performed This work was performed utilizing high frequency CT's to monitor surface discharge. It was found that there were significant variation in the surface discharge waveform frequency spectrum, depending both on the surface discharge magnitude and more importantly on the duration of surface discharge activity.

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Sol-Gel 방법에 의한 BST 박막의 표면 및 전기적 특성 (The Surface and Electrical Properties of BST Thin Films Prepared by Sol-Gel Method)

  • 홍경진;조재철
    • 한국전기전자재료학회논문지
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    • 제15권6호
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    • pp.504-510
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    • 2002
  • Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

Simple Technique Reducing Leakage Current for H-Bridge Converter in Transformerless Photovoltaic Generation

  • Kot, Radoslaw;Stynski, Sebastian;Stepien, Krzysztof;Zaleski, Jaroslaw;Malinowski, Mariusz
    • Journal of Power Electronics
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    • 제16권1호
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    • pp.153-162
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    • 2016
  • Given their structural arrangement, photovoltaic (PV) modules exhibit parasitic capacitance, which creates a path for high-frequency current during zero-state switching of the converter in transformerless systems. This current has to be limited to ensure safety and electromagnetic compatibility. Many solutions that can minimize or completely avoid this phenomenon, are available. However, most of these solutions are patented because they rely on specific and often complex converter topologies. This study aims to solve this problem by introducing a solution based on a classic converter topology with an appropriate modulation technique and passive filtering. A 5.5 kW single-phase residential PV system that consists of DC-DC boost stage and DC-AC H-bridge converter is considered. Control schemes for both converter stages are presented. An overview of existing modulation techniques for H-bridge converter is provided, and a modification of hybrid modulation is proposed. A system prototype is built for the experimental verification. As shown in the study, with simple filtering and proper selection of switching states, achieving low leakage current level is possible while maintaining high converter efficiency and required energy quality.

간이 스위칭법에 의한 단상 역률개선형 컨버터 (The Single Phase Converter of Power Factor Collection Type with Simple Switching Method)

  • 문경희;고강훈;김은수;곽동걸;조판제;이현우
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1999년도 전력전자학술대회 논문집
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    • pp.323-326
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    • 1999
  • For decrease the harmonic current components of the power source, a first method is insert the choke coil that used the choke input type rectifier, the booster chopper circuit and buck chopper circuit. And the several method are studying like as the PWM(Pulse Width Modulation) converter and the active filter type which is used the high frequency switching and the sinusoidal wave formed input current. In this type, there are many problem as a low efficiency, increased the noise, the high leakage current and cost up by the high frequency switching. For improve this problems, the partial resonan method is used on the booster inducter and lossles snubber condenser. This method decreased the distortion factor has lower harmonic components than the hard switching and there is no switching loss by the ZCS(Zero Current Switching) at switch turn-on and the ZVS(Zero Voltage Swithcing) at switch turn-off

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다결정질 Si TFT-LCD에서의 Flicker에 대한 Simulation 연구 (A Simulation Study on the Flicker Analysis for the Poly-Silicon TFT-LCD)

  • 손명식;송민수;유건호;허지호;경희대학교물리학과;경희대학교물리학과
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.225-228
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    • 2001
  • We simulated and analyzed the flicker phenomena in the poly-Si TFT-LCD using PSpice for the development of wide-area and high-quality LCD display We define the electric quantity of flicker in the TFT-LCD, which is the ratio of half frame frequency (30Hz) to DC (0 Hz) frequency. We compared two different types of TFTs, excimer laser annealed (ELA) poly-Si TFT and silicide mediated crystallization (SMC) poly-Si TFT, and found that the ELA and SMC TFTs show different flicker characteristics because of their mobility and leakage current. In addition, we showed that the gate voltage should be chosen carefully at the minimum flicker because of the larger leakage current of poly-Si Tn as compared with a-Si TFT

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Preparation and Characterization of Sol-Gel Derived High-k $SrTa_2O_6$ Thin Films

  • Park, Kwang-Hun;Jeon, Ho-Seung;Kim, Zee-Won;Park, Byung-Eun;Kim, Chul-Ju
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.198-199
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    • 2006
  • $SrTa_2O_6$(STA) thin films were fabricated by sol-gel method. The films annealed below $700^{\circ}C$, showed amorphous phase and crystallization phase was observed after annealing over $800^{\circ}C$. From high frequency capacitance-voltage measurements, 24nm thick STA thin film annealed at $900^{\circ}C$, has an EOT of 5.7nm and a dielectric constant of 16. Leakage current characteristics were improved by the insertion of chemical oxide between STA and Si. Leakage current densities are around $3.5{\times}10^{-7}A/cm^2$ at 5V for the structure inserted chemical oxide but $1.4{\times}10^{-6}A/cm^2$ at 5V without chemical oxide.

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