• 폴리머
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• 제32권1호
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• pp.90-93
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• 2008

암 치료의 보조요법의 하나로 제시될 수 있는 전자파를 이용한 온열치료법의 기초연구를 수행하였다. 폴리에틸렌, 탈이온수, 그리고 염화나트륨 등으로 구성되는 젤리형의 인체 뇌 팬텀을 제작하고 이들 팬텀 재료의 다양한 구성비에 따른 팬텀의 전기적 특성을 유전율상수와 전도도를 측정하여 평가하였다. 그 결과, 염화나트륨의 양이 증가함에 따라 팬텀의 도전율이 증가하는 것을 제외하고는 팬텀 재조에 사용한 재료의 함량이 증가할수록 팬텀의 전기적 특성 값들은 대체로 감소함을 확인하였다. 또한 시간 경과에 따른 무게비로 측정한 팬텀의 장기안정성은 6개월이 경과한 시점까지도 양호하게 유지됨을 알 수 있었다. 이러한 연구 결과는 향후 각종 인체장기에 대응하는 자성유체가 혼입된 젤리팬텀의 전자기적 특성과 온도 상승을 관찰함으로써 암 치료에 있어서의 새로운 방법론을 제시할 수 있을 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.76-76
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• 2008

The resonance properties due to the surface plasmon(SP) excitation of metal nanoparticles make the nanocomposite films promising for various applications such as optical switching devices. In spite of the well-known ultra-sensitive operation of optical switches based on a guided wave, the application of nanocomposite film(NC) has inherent limitation originating from the excessive optical loss related with the surface plasmon resonance(SPR). In this study, we addressed this problem and present the experimental and theoretical analysis on the pump-probe optical switching in prism-coupled Au(1 vol.%):$SiO_2$ nanocomposite waveguide film. The guided mode was successfully generated using a near infrared probe beam of 1550 nm and modulated with an external pump beam of 532 nm close to the SPR wavelength. We extend our approach to ultra-fast operation using a pulsed laser with 5 ns pulse width. To improve the switching speed through the reduction in thermal loading effect accompanied by the resonant absorption of pump beam light, we adopted a metallic film as a coupling layer instead of low-index dielectric layer between the high-index SF10 prism and NC slab waveguide. We observed great enhancement in switching speed for the case of using metallic coupling layer, and founded a distinct difference in origin of optical nonlinearities induced during switching operation using cw and ns laser.

• 한국재료학회지
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• 제30권11호
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.627-631
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• 2011

[ $[Li_{0.04}(Na_{0.54}K_{0.46})_{0.96}](Nb_{1-0.04-X}TaxSb_{0.04})O_3$ ]lead-free piezoelectric ceramics have been prepared by normal sintering at $1,100^{\circ}C$ for 5 h. X-ray diffraction analysis indicated that specimens demonstrate orthorhombic symmetry when $Ta\leq5$ mol%. While transforming into tetragonal symmetry when $x\geq20$ mol%. These suggest that the orthorhombic and tetragonal phases co-exist in the ceramics with 5 mol% $cm^3$. As the result of SEM images, the grain growth was decreased with the increase of Ta substitution. The ceramics become 'softening', leading to improvements in $k_p$, $\varepsilon_r$ and $d_{33}$, but a decrease in $Q_m$. Excellent properties of $k_p$= 0.46, $d_{33}$= 293 pC/N, ${\varepsilon}_r$= 1,583 and Tc= $340^{\circ}C$ were obtained when Ta= 15 mol%.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• 통합자연과학논문집
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• 제14권3호
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• pp.99-106
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• 2021

A mixture of alcohol and water is commonly used as antifreeze, liquor, and the fundamental solvents for the manufacture of cosmetics, pharmaceuticals, and inks in our daily life. Since various properties of alcohol water mixtures such as density, boiling or melting point, viscosity, and dielectric constant are determined by their mixing ratio, it is very important to know the mixing ratio to predict their properties. One of simple method to find the mixing ratio is measuring the density of the mixtures. However, it is not easy to predict the mixing ratio from the density of the mixtures because the relationship between mixing ratio and density has not been established well. The relationship is dependent on the relative sizes of solute and solvent molecules, and their interactions. Recently, an empirical model to predict the density of glycerol water mixture from their mixing ratio has been introduced. The suggested model is simple but quite accurate for glycerol water mixture. In this article, we investigated the applicability of this model to different alcohol water mixtures. Densities for six different alcohol water mixtures containing various alcohols (e.g., ethylene glycol, 1,3-propane diol, propylene glycol, methanol, ethanol, and 1-propanol) were simulated and compared to experimentally measured ones to investigate the applicability of the model proposed for glycerol water mixtures to other alcohol water mixtures. The model predicted the actual density of all alcohol water mixtures tested in this article with high accuracy at various ratios. This model can probably be used to predict the mixing ratio of other alcohol water mixtures from their densities beyond 6 alcohols tested in this article from their densities.

• 한국재료학회지
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• 제22권2호
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• pp.61-65
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• 2012

A $Li_2O-2SiO_2$ ($LS_2$) glass was investigated as a lithium-ion conducting oxide glass, which is applicable to a fast ionic conductor even at low temperature due to its high mechanical strength and chemical stability. The $Li_2O-2SiO_2$ glass is likely to be broken into small pieces when quenched; thus, it is difficult to fabricate a specifically sized sample. The production of properly sized glass samples is necessary for device applications. In this study, we applied spark plasma sintering (SPS) to fabricate $LS_2$ glass samples which have a particular size as well as high transparency. The sintered samples, $15mm\phi{\times}2mmT$ in size, ($LS_2$-s) were produced by SPS between $480^{\circ}C$ and $500^{\circ}C$ at 45MPa for 3~5mim, after which the thermal and dielectric properties of the $LS_2$-s samples were compared with those of quenched glass ($LS_2$-q) samples. Thermal behavior, crystalline structure, and electrical conductivity of both samples were analyzed by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and an impedance/gain-phase analyzer, respectively. The results showed that the $LS_2$-s had an amorphous structure, like the $LS_2$-q sample, and that both samples took on the lithium disilicate structure after the heat treatment at $800^{\circ}C$. We observed similar dielectric peaks in both of the samples between room temperature and $700^{\circ}C$. The DC activation energies of the $LS_2$-q and $LS_2$-s samples were $0.48{\pm}0.05eV$ and $0.66{\pm}0.04eV$, while the AC activation energies were $0.48{\pm}0.05eV$ and $0.68{\pm}0.04eV$, respectively.

• 한국결정성장학회지
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• 제21권2호
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• pp.60-64
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• 2011

고감도 적외선 이미지 센서에 적용이 가능한 우수한 TCR(temperature coefficient of resistance) 값을 갖고 적외선 파장영역에서 흡수 특성을 갖는 막 형성을 위해, 본 연구에서는 Silica와 Titanium 분말을 혼합비율을 달리하여 준비한 후 열 기상 증착기를 이용하여 상온에서 게르마늄과 유리 기판 위에 각각 $(SiO_2)_x-(Ti)_y$ 막을 제작하였다. 챔버 내에 위치한 혼합분말이 담겨진 텅스텐 보트와 기판 간의 거리는 15.5 cm이며, 사용된 $SiO_2$와 Ti 분말의 혼합비율 x : y는 각각 90 : 10,80 : 20, 70 : 30, 60 : 40이다. $(SiO_2)_x-(Ti)_y$ 막의 전기적 저항은 273~333 K 영역에서 온도 변화에 따라 측정하였으며, TCR 값은 측정된 막의 저항 값으로부터 계산되었다. 다양한 혼합비율 조건 하에서 형성된 $(SiO_2)_x-(Ti)_y$ 막은 수 $k{\Omega}$~수백 의 $k{\Omega}$ 저항특성을 보였으며, 이러한 막의 TCR은 $-1.4{\sim}-2.6%K^{-1}$의 다양한 값을 나타내었다.

• 한국전자파학회논문지
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• 제15권9호
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• pp.826-834
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• 2004

본 논문에서는 소형이며 광대역 특성을 가지는 안테나를 위해 Bi$_2$O$_3$가 첨가된 BaTi$_4$$O_{9}$ 세라믹스를 이용하여 후막 모노폴 안테나를 제작하였다. 그 결과 첨가된 Bi가 치환되어 이차상인 Bi$_4$Ti$_3$O$_{12}$를 형성되었고 이에따라 높은 비유전율은 일정하였고 품질계수(Q$_{f}$${\times}$f)는 급격히 감소하였다. 안테나 특성에 있어서 비유전율보다는 품질 계수의 영향을 직접적으로 받았다. 대역폭을 측정한 결과 Bi$_2$O$_3$ 첨가량이 증가할수록 급격한 품질계수 감소와 함께, 대역폭은 16 %에서 33 %로 증가하였다. 이에 반하여 이득은 -0.8 dBi에서 -4.3 dBi로 감소하였다. 이로인해 방사 패턴은 Bi$_2$O$_3$ 미(未)첨가시 보다 낮은 dBi 값을 보여 주었다. 특히 방사 패턴을 측정 한 결과 무 지향성을 보여야 될 x-y면 방사 패턴의 경우 격자구조의 왜곡으로 인한 파장의 산란과 공기와 유전체의 경계면에서 높은 비유전율의 차이로 굴절이 일어나 심하게 왜곡되어 있었다. 그러나 낮은 품질계수로 인하여 모든 조성 범위에서 우수한 -10 dB 대역폭 특성을 보여주었다.주었다..

• 한국재료학회지
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• 제18권4호
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.