• New & Renewable Energy
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• v.18 no.1
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Water for future
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• v.9 no.2
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• pp.67-75
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• 1976

With 9 existng reservoirs selected in the Sab-Gyo River Basin, the sedimentation of the reservoirs has been calculated by comparing the present capacity with the original value, which revealed its reduced reservoirs capacity. The reservoirs has a total drainage area of 6,792 ha, with a total capacity of 1,204.09 ha-m, and are short of water supply due to reduction of reservoirs capacity. Annual sedimention in the reservcire is relation to the drainage area, the mean of annual rain fall, and the slop of drainage area. The results of obtained from the investigation are summarized as follow; (1) A sediment deposition rate is very high, being about $9.19{m}^3/ha$ of drainage area, and resulting in the average decrease of reservoir capacity by 19.1%. This high rate of deposition could be mainly attributed to the serve denvdation of forests due to disor derly cuttings of tree. (2) An average unit storage of 415.8mm as the time of initial construation is decreesed to 315.59mm at present, as resultting, we could'nt supply water at 566.24ha. (3) A sediment deposition rate as a relation to the capacity of unit drainage area is as follow; $Qs=1.43 (c/a)^{0.531}$ (4) A sediment deposition rate as a relation to the mean of annval rainfall is as follow; $Qs=672.61 p^{0.024}$ (5) A sediment deposition rate as a relation to the mean slop of drainage area is follow; $Qs=267.21 S^{0.597}$

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Journal of the Korean institute of surface engineering
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• v.26 no.1
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.6
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• pp.59-69
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• 2021

Directed energy deposition (DED) is an additive manufacturing technology involving a focused high-power laser or electron beam propagating over the substrate, resulting in melt pool formation while simultaneously supplying metal powder to the melt pool area to deposit the material. DED is performed to repair and strengthen parts in various applications, as it can be easily integrate local area cladding and cross-material deposition. In this study, we characterize stainless steel 316 L parts fabricated via DED based on various deposition conditions and geometries to widen the application of DED. The deposition characteristics are investigated by varying the laser power and powder feed rate. Multilayer deposition with a laser power of 362 W and a powder feed rate of 6.61 g/min indicate a height closest to the design value while affording high surface quality. The microhardness of the specimen increases from the top to the bottom of the deposited area. Tensile tests of specimens with two different deposition directions indicate that horizontally long specimens with respect to a substrate demonstrate a higher ultimate tensile strength and yield strength than vertically long specimens with lower elongation.

• Journal of Welding and Joining
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• v.15 no.1
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• pp.109-115
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• 1997

The arc stability and the metal transfer mode of high deposition GMA welding were investigated using various compositions of shielding gas with two types of filler, ie solid wire and metal cored wire. As for a solid wire, the transfer mode changed from axial spray to rotational spray with increasing wire feed rate (welding current) and the transition current was different with the gas composition. The gas composition also affected the apparent stability of rotating arc. As for a metal cored wire, on the other hand, no transition occurred and thus spray transfer mode could be applied with the welding current over 500A (deposition rate over 300g/min). Looking for the development of high deposition GMA welding process, above results were discussed in two different ways, one is to elevate the transition current, the other is to stabilize the rotational transfer mode.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.