• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.833-834
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• 2001

A membrane immuno-chromatographic system that selectively separated plasma lipoproteins and generated a signal in proportion to the concentration of cholesterol within high-density lipoprotein (HDL) was investigated as a point-of-care device for the prognosis of coronary heart disease.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.141-141
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• 2009

본 실험에서는 비평형 마그네트론 스퍼터링 (Unbalanced Magnetron Sputtering, UBMS)을 이용하여 제작된 ITO 박막의 전기적, 광학적, 구조적인 특성들에서 기판온도와 자장 변화의 영향에 대해 연구하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.83-83
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.216-216
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• 2003

• Journal of The Korean Astronomical Society
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• v.34 no.4
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• pp.317-319
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• 2001

The response of the earth's magnetosphere to the variation of the solar wind parameters and Interplanetary magnetic field (IMF) has been stud}ed by using a high-resolution, three-dimension magnetohydrodynamic (MHD) simulation when the WIND data of velocity Vx, plasma density, dynamic pressure, By and Bz every 1 minute were used as input. Large electrojet and magnetic storm which occurred on October 21 and 22 are reproduced in the simulation (fig. 1). We have studied the energy transfer and tail reconnect ion in association with geomagnetic storms.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.112-112
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• 2011

300 mm 웨이퍼용 도핑장치에서 2 MHz 유도결합 플라즈마와 8 kHz의 기판 바이폴라 펄스 바이어스에 의한 플라즈마에 대해 수치 계산이 수행되었다. 한 주기에서 0, -500, +100 V의 Pulse duration동안 기판 전체에 100, 500, 150 eV 부근의 이온 입사 에너지 분포를 보였으며, 이에 따라 기판 가장자리에서의 이온 입사 각도는 -30~+$30^{\circ}$ 사이에서 변화함으로서 도핑 불균일에 대한 원인을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.68-69
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• 2005

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.101-102
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• 2006

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant, It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the sell-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS). respectively. The removal rate of BTO thin film using the $BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.05a
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• pp.27-30
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• 2022

The plasma process, which has many advantages in terms of efficiency and environment compared to conventional process methods, is widely used in semiconductor manufacturing. Plasma Sheath is a dark region observed between the plasma bulk and the chamber wall surrounding it or the electrode. The Plasma Sheath Monitoring Sensor (PSMS) measures the difference in voltage between the plasma and the electrode and the RF power applied to the electrode in real time. The PSMS data, therefore, are expected to have a high correlation with the state of plasma in the plasma chamber. In this study, a model for predicting the state of nitrogen ions in the plasma chamber is training by a deep learning machine learning techniques using PSMS data. For the data used in the study, PSMS data measured in an experiment with different power and pressure settings were used as training data, and the ratio, flux, and density of nitrogen ions measured in plasma bulk and Si substrate were used as labels. The results of this study are expected to be the basis of artificial intelligence technology for the optimization of plasma processes and real-time precise control in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.105-105
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• 2009

The composites were fabricated by adding 30, 35, 40, 45[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. $SiC-ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in vacuum or argon gas atmosphere. The relative density of SiC+40[vol.%]$ZrB_2$ composites reveal high 99.57[%] in argon gas atmosphere and pressure 50MPa.