• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.12-12
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• 2000

This paper investigated the effect of the film deposition rate for $CrN_x$ microstructure and mechanical properties. For these purpose, pure Cr an stoichiometric CrN films were deposited with various target power density on Si hardened M2 tool steel. The variation of ni trogen concentration in $CrN_x$ f analyzed by AES and deposition rate was calculated by measuring of thickness using ${\alpha}-step$ profilometer. The microstructure was analyzed by X-Ray Diffract and Scanning Electron Microscopy(SEM), and mechanical properties were evalua residual stress, microhardness and adhesion tests. Deposition rate of Cr and CrN increased as an almost linear function of target power density from $0.25\mu\textrm{m}/min$ and $0.15\mu\textrm{m}/min$ to $0.43\mu\textrm{m}/min$. Residual stresses of Cr and CrN films were from tensi Ie to compressive stress with an increase of deposi tion rate a compressive stresses were increased as more augmentation of deposition r maximum hardness value of $2300kg/\textrm{mm}^2$ and the best adhesion strength correspond HF 1 were obtained for CrN film synthesized at the highest target densitY($13.2W/\textrm{mm}^2$) owing to high residual compressive stress and increasing mobility.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.38-44
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• 2022

Plasma density in semiconductor fabrication equipment becomes higher to achieve the improved the throughput of the process, but the increase of surface corrosion of the ceramic coated chamber wall has been observed by the increased plasma density. Plasma chamber wall coating with aerosol deposition prefer to be firm and uniform to prevent the potential creation of particle inside the chamber from the deformation of the coating materials, and the aerosol discharge nozzle is a good control factor for the deposited coating condition. In this paper, we investigated the design of the nozzle of the aerosol deposition to form a high-quality coating film. Computational fluid dynamics (CFD) study was employed to minimize boundary layer effect and shock wave. The degree of expansion, and design of simulation approach was applied to found out the relationship between the divergence angle and nozzle length as the key parameter for the nozzle design. We found that the trade-off tendency between divergence angle and nozzle length through simulation and quantitative analysis, and present the direction of nozzle design that can improve the uniformity of chamber wall coating.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.218-218
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• 2003

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2008년도 춘계학술대회
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• pp.23-29
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• 2008

- High Density Plasma Source-CCP-Dual/Triple, RF Frequency Control - Radical/Flux Analysis - Low Pressure Process - Chamber Design (Process gap/Wall gap) - Chamber Temp. Control. - ESC Dielectric Materials - Uniform Gas Injection

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.223-225
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• 2005

This paper presents a novel prototype of a current source resonant inverter using insulated gate bipolar transistors for driving a streamer reactor, streamer generation technology has been recognized as one of the best methods for water treatment, disinfection, industrial wastes utilization, and so on. However, some technological difficulties related to efficient streamer production have been significant problems restricting streamer usage in the industrial plants. Introduced in this paper is a pulse density modulated high frequency inverter for a plasma generate, which is developed with the aim to improve power conversion and control characteristics of the streamer reactor by using advances in power electronic technology. The developed system implements the feedforward control-based pulse density modulation control scheme with pulse width modulation feedback control strategy to compensate temperature and other environmental influences on streamer discharge.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.22-27
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• 2009

Target design study to improve the quality of an accelerated proton beam from the interaction of a high-intensity short pulse laser with an overdense plasma slab has been accomplished by using a two-dimensional, fully electromagnetic and relativistic particle-in-cell (PIC) simulation. The target consists of a thin core part and a thick peripheral part of equivalent plasma densities, while the ratio of the radius of the core part to the laser spot size, and the position of the peripheral part relative to the fixed core part were varied. The positive effects of this core-peripheral target structure could be expected from the knowledge of the typical target normal sheath acceleration (TNSA) mechanism in a laser-plasma interaction, and were apparently evidenced from the comparison with the case of a conventional simple planar target and the case of the transversal size reduction of the simple planar target. Improvements of the beam qualities including the collimation, the forward directionality, and the beam divergence were verified by detailed analysis of relativistic momentum, angular directionality, and the spatial density map of the accelerated protons.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2004년도 춘계학술대회 논문집
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• pp.475-478
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• 2004

we studied the effect of the type of non-thermal plasma on the decomposition of $CF_4$. 3 types of reactors were manufactured to generate different types of plasma respectively, and went into the experiments. As the results, we found that high density of the energy of non-thermal plasma and the minimization of non-discharged area should be met in order to elevate decomposition rate of $CF_4$. Among the reactors used in the study, the hole-type reactor was such one that satisfying that requirement. Using the hole-type reactor, treatment efficiency for high concentration of $CF_4$ was excellent. We got decomposition rate of more than 95[%] between 500[ppm] around and less than 400[ppm], and up to 85[%] at 900[ppm].

• 한국표면공학회지
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• 제48권3호
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• pp.126-130
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• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.