• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.78-78
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• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.891-894
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• 1999

ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously. And difficult consider am-bipolar drift effect.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.8
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• pp.833-837
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• 2015

Li-air batteries have a promising future for because of their high energy density, which could theoretically be equal to that of gasoline. However, substantial Li-air cell performance limitations exist, which are related to the air cathode. The cell discharge products are deposited on the surfaces of the porous carbon materials in the air electrode, which blocks oxygen from diffusing to the reaction sites. Hence, the real capacity of a Li-air battery is determined by the carbon air electrode, especially by the pore volume available for the deposition of the discharged products. In this study, a simple and fast method is reported for the large-scale synthesis of carbon nanoballs (CNBs) consisting of a highly mesoporous structure for Li-air battery cathodes. The CNBs were synthesized by the solution plasma process from benzene solution, without the need for a graphite electrode for carbon growth. The CNBs so formed were then annealed to improve their electrical conductivity. Structural characterization revealed that the CNBs exhibited both an pore structure and high conductivity.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.1-5
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• 2019

This study has been focused on properties of surface technology for large diameter upper electrode using in high density plasma process as like semi-conductor manufacturing process. The experimental studies have been carried out to get mirror surface for upper electrode. For a formation of high surface quality upper electrode, single crystal silicon upper electrode has been mechanical and chemical machining worked. Mechanical machining work of the upper electrode is carried out with varying mesh type using diamond wheel. In case of chemical machining work, upper electrode surface roughness was observed to be strongly dependent upon the etchant. The different surface roughness characteristics were observed according to etchant. The machining result of the surface roughness and surface morphology have been analyzed by use of surface roughness tester, laser microscope and ICP-MS.

• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Journal of the Korea Society of Computer and Information
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• v.21 no.12
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• pp.139-145
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• 2016

In this paper, we propose to evaluate the effect of Resistin-like molecule alpha (Retnla) on the expression of transporters involved in modulating concentrations of peripheral cholesterol and plasma high-density lipoprotein (HDL) cholesterol. High levels of blood cholesterol are a well-recognized risk factor for atherosclerosis and are eliminated via the process of reverse cholesterol transport (RCT). We recently showed that Retnla ameliorates hypercholesterolemia and atherosclerosis by increasing biliary cholesterol secretion, the final step of the process, in low-density lipoprotein receptor-deficient mice. However, the role of Retnla in HDL-mediated cholesterol efflux, initial step of RCT pathway, is not yet clear. To identify cholesterol transport genes regulated by Retnla, we performed an extensive microarray-based gene expression screen using livers from Retnla-overexpressing (Tg) mice and control animals. The most significant change in Retnla-Tg mice was an upregulation of ATP-binding cassette sub-family G member 4 (Abcg4) transport and was validated using quantitative RT-PCR. The validated gene was also induced by treatment of purified Retnla protein in RAW 264.7 cells incubated with acetylated low-density lipoprotein and Hepa1c1c7 cells. Taken together, these results indicates that Retnla might also accelerate initial step of RCT pathway, suggesting therapeutic value of Retnla in the treatment of hypercholesterolemia and atherosclerosis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.645-649
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• 2009

We investigated the effects of a high density $O_2$ plasma treatment on the structural and electrical properties of Ga-, B- codoped ZnO (GZOB) films. The GZOB films were deposited on polymer substrate without substrate heating by DC magnetron sputtering. Prior to the GZOB film growth, we treated a polymer substrate with highly dense inductively coupled oxygen plasma. The optical transmittance of the GZOB film, about 80 %, was maintained regardless of the plasma pre-treatment. The resistivity of the GZOB film on PC substrate decreased from 9.08 ${\times}$ $10^{-3}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 2.12 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment. And PES substrate decreased from 1.14 ${\times}$ $10^{-2}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 6.13 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment.

• Journal of Powder Materials
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• v.20 no.5
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• pp.338-344
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• 2013

Fe-TiC composite was fabricated from Fe and TiC powders by high-energy milling and subsequent spark-plasma sintering. The microstructure, particle size and phase of Fe-TiC composite powders were investigated by field emission scanning electron microscopy and X-ray diffraction to evaluate the effect of milling conditions on the size and distribution of TiC particles in Fe matrix. TiC particle size decreased with milling time. The average TiC particle size of 38 nm was obtained after 60 minutes of milling at 1000 rpm. Prepared Fe-TiC powder mixture was densified by spark-plasma sintering. Sintered Fe-TiC compacts showed a relative density of 91.7~96.2%. The average TiC particle size of 150 nm was observed from the FE-SEM image. The microstructure, densification behavior, Vickers hardness, and fracture toughness of Fe-TiC sintered compact were investigated.