Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Characteristics of GZOB Thin Film on O2 Plasma Treated Polymer Substrate

O2 플라즈마로 처리한 폴리머 기판 위에 성장된 GZOB 박막의 특성

  • 유현규 (성균관대학교 정보통신공학부) ;
  • 이종환 (성균관대학교 정보통신공학부) ;
  • 이태용 (성균관대학교 정보통신공학부) ;
  • 허원영 (성균관대학교 정보통신공학부) ;
  • 이경천 (성균관대학교 정보통신공학부) ;
  • 신현창 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Published : 2009.08.01
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Abstract

We investigated the effects of a high density $O_2$ plasma treatment on the structural and electrical properties of Ga-, B- codoped ZnO (GZOB) films. The GZOB films were deposited on polymer substrate without substrate heating by DC magnetron sputtering. Prior to the GZOB film growth, we treated a polymer substrate with highly dense inductively coupled oxygen plasma. The optical transmittance of the GZOB film, about 80 %, was maintained regardless of the plasma pre-treatment. The resistivity of the GZOB film on PC substrate decreased from 9.08 ${\times}$ $10^{-3}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 2.12 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment. And PES substrate decreased from 1.14 ${\times}$ $10^{-2}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 6.13 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment.

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References

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