• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.68-74
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• 2021

Zinc-ion Batteris (ZIBs) are recently being considered as energy storage devices due to their high specific capacity and high safety, and the abundance of zinc sources. Especially, ZIBs can overcome the drawbacks of conventional lithium ion batteris (LIBs), such as cost and safety issues. However, in spite of their advantages, the cathode materials under development are required to improve performance of ZIBs, because the capacity and cycling stability of ZIBs are mainly influenced by the cathode materials. To design optimized cathode materials for high performance ZIBs, a novel manganese oxide (MnO2) coated graphite sheet is suggested herein with improved zinc-ion diffusion capability thanks to the uniformly decorated MnO2 on the graphite sheet surface. Especially, to optimize MnO2 on the graphite sheet surface, amounts of percursors are regulated. The optimized MnO2 coated graphite sheet shows a superior zinc-ion diffusion ability and good electrochemical performance, including high specific capacity of 330.8 mAh g-1 at current density of 0.1 A g-1, high-rate performance with 109.4 mAh g-1 at a current density of 2.0 A g-1, and remarkable cycling stability (82.2 % after 200 cycles at a current density of 1.0 A g-1). The excellent electrochemical performance is due to the uniformly decorated MnO2 on the graphite sheet surface, which leads to excellent zinc-ion diffusion ability. Thus, our study can provide a promising strategy for high performance next-generation ZIBs in the near future.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.498-504
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• 2012

Oxide layers were prepared by an environmentally friendly plasma electrolytic oxidation (PEO) process on an Al-1050 substrate. The electrolyte for PEO was an alkali-based solution with $Na_2SiO_3$ (8 g/L) and NaOH (3 g/L). The influence of the electrical parameters on the phase composition, microstructure and properties of the oxide layers formed by PEO were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The voltage-time responses were recorded during various PEO processes. The oxides are composed of two layers and are mainly made of ${\alpha}$-alumina, ${\gamma}$-alumina and mullite phases. The proportion of each phase depends on various electrical parameters. It was found that the surface of the oxides produced at a higher current density and Ia/Ic ratio shows a more homogeneous morphology than those produced with the electrical parameters of a lower current density and lower Ia/Ic ratio. Also, the oxide layers formed at a higher current density and higher Ia/Ic ratio show high micro-hardness levels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• Journal of the Korean institute of surface engineering
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• v.52 no.3
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• pp.150-155
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• 2019

The carbon electrode was modified through manganese-catalyzed hydrogenation method for high energy density vanadium redox flow battery (VRFB). During the catalytic hydrogenation, the manganese oxide deposited at the surface of the carbon electrode stimulated the conversion reaction from carbon to methane gas. This reaction causes the penetration of the manganese and excavates a number of cavities at electrode surface, which increases the electrochemical activity by inducing additional electrochemically active site. The formation of the porous surface was confirmed by the scanning electron microscopy (SEM) images. Finally, the electrochemical performance test of the electrode with the porous surface showed lower polarization and high reversibility in the cathodic reaction compared to the conventional electrode.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.895-901
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• 2023

Oxide-dispersion- strengthened nickel alloys with Hf additions are expected to present high temperature mechanical properties and durable helium resistance based on first-principles density functional theory (DFT) calculations. Energetic and charge density evaluations of the helium behaviors were performed in Ni matrix, Y₂Hf₂O₇ oxide and the oxide/matrix interface. With the presence of coherent Y₂Hf₂O₇ in Ni matrix, chances of helium bubbles in Ni can be greatly diminished. The helium atoms shall occupy the interfacial site initially, then diffuse into in the octahedral sites of Y₂Hf₂O₇, and these oxide-captured He atoms prefer to separate individually. Much higher diffusion barrier of He in Y₂Hf₂O₇ than in nickel is related to the strong hybridization between interstitial He-1s and nearest-neighboring O-2p orbitals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Vacuum Magazine
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• v.5 no.2
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• pp.10-17
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• 2018

Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• Journal of the Korean institute of surface engineering
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• v.49 no.2
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• pp.125-129
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• 2016

Anodizing is a technology to generate thicker and high-quality films than natural oxide films by treating metals via electrochemical methods. Electrochemical manufacturing method of nano structure is an efficient technology in terms of cost reduction, high productivity and complicated shapes, which receives the spotlight in diverse areas. Especially, artificial films generated by anodizing technology possess excellent mechanical characteristics including hardness and wear resistance. It is also easy to modify thickness and adjust shape of those artificial films so that they are mainly used in sensors, filters, optical films and electrolytic condensers. In this study, experiment was performed to observe the effect of current density on porous film formation in two-step anodizing for Al alloy. Anodizing process was performed with 10 vol.% sulfuric acid electrolyte while the temperature was maintained at $10^{\circ}C$ using a double beaker. and $10{\sim}30mA/cm^2$ was applied for 40 minutes using a galvanostatic method. As a result, both pore diameters and distances between pores tended to increase as the local temperature and electrolysis activity increased due to the increase in applied current density.