• 제목/요약/키워드: High Voltage DC Transmission

검색결과 95건 처리시간 0.021초

고속 CMOS A/D 변환기를 위한 기준전압 흔들림 감쇄 회로 (A DC Reference Fluctuation Reduction Circuit for High-Speed CMOS A/D Converter)

  • 박상규;황상훈;송민규
    • 대한전자공학회논문지SD
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    • 제43권6호
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    • pp.53-61
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    • 2006
  • 고속 Flash, Pipelining type의 CMOS A/D 변환기에서 Sampling frequency가 고주파로 올라감에 따라 Clock Feed-through 현상, Kick-back 현상 등의 영향으로 DC Reference voltage 흔들림 현상이 심화되고 있다. 뿐만 아니라 측정 시 외부 Noise가 Reference voltage에 적지 않은 영향을 미친다는 것을 감안 할 때 High speed A/D converter에서 Reference fluctuation 감쇄회로는 반드시 필요하다. 기존의 방식은 단순히 커패시터를 이용했으나 면적이 크고 효과가 좋지 않다는 단점이 있다. 본 논문에서는 Transmission Gate를 이용한 reference fluctuation 감쇄 회로를 제안하고 흔들림 현상이 크게 개선되었음을 정량적 분석 및 측정을 통하여 증명하였다. 제안하는 회로의 측정을 위해 6bit의 해상도를 갖는 2GSPS CMOS A/D 변환기를 설계 및 제작하였다. 제작된 A/D 변환기를 이용하여 Reference 전압이 40mV의 흔들림이 있음에도 원하는 범위 내에서 동작함을 측정하였다. 본 연구에서는 1.8V $0.18{\mu}m$ 1-poly 5-metal N-well CMOS 공정을 사용하였고, 소비전력은 145mW로 Full Flash 변환기에 비해 낮았다. 실제 제작된 칩의 SNDR은 약 36.25dB로 측정되었고, INL과 DNL은 각각 ${\pm}0.5$ LSB 이하로 나타났다. 유효칩 면적은 $997um\times1040um$ 이었다.

A Design of BJT-based ESD Protection Device combining SCR for High Voltage Power Clamps

  • Jung, Jin-Woo;Koo, Yong-Seo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권3호
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    • pp.339-344
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    • 2014
  • This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

18-step Back-to-Back Voltage Source Converter with Pulse Interleaving Circuit for HVDC Application

  • Lee, Hye-Yeon;Jeong, Jong-Kyou;Lee, Ji-Heon;Han, Byung-Moon;Choi, Nam-Sup;Cha, Han-Ju
    • Journal of Electrical Engineering and Technology
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    • 제5권3호
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    • pp.435-442
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    • 2010
  • This paper proposes an 18-step back-to-back (BTB) voltage source converter using four sets of 3-Level converter modules with auxiliary circuits to increase the number of steps. The proposed BTB voltage source converter has the independent control capability of active power and reactive power at the interconnected ac system. The operational feasibility of the proposed BTB converter was verified through many simulations with PSCAD/EMTDC software. The feasibility of hardware implementation was verified through experimental results with a scaled hardware prototype. The proposed BTB converter could be widely applied for interconnecting the renewable energy source to the power grid.

60MW급 HVDC 시스템 제어 알고리즘 개발 (Development of 60MW HVDC System Control Algorithm)

  • 이경빈;정용호;황호윤
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2012년도 추계학술대회 논문집
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    • pp.183-184
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    • 2012
  • 2010년부터 민간기업인 LS산전과 한국전력공사의 공동 개발을 통하여 60MW급 ${\pm}80kV$ HVDC (High Voltage DC transmission System)전류형 HVDC시스템 알고리즘 국산화 개발을 진행하여 2012년 3월 개발을 완료하였다. 개발된 알고리즘의 성능, 안정성 및 신뢰성을 확보하기 위하여 LS산전에서 개발한 Hardware 플랫폼에 제어 알고리즘을 탑재하고 RTDS(Real Time Digital Simulator)를 통한 연계시험을 진행하여 이를 검증하였다. 본 논문에서는 개발된 HVDC 제어 알고리즘의 기능과 RTDS연계 시험결과를 소개하고자 한다.

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순간전압강하 극복을 위한 대용량 유도전동기 제어방식 설계 및 해석 (Design and Analysis of Large Induction Motor Control Coping with Voltage Sag)

  • 조성돈;임성호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 C
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    • pp.1056-1058
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    • 1998
  • Voltage dips caused by transmission system faults are usually of a short duration. High speed relaying and breaker operation will typically limit the disturbance to 0.1 seconds. Most motor controllers obtain their control power directly from the bus by means of a control transformer. Under this condition, a voltage dip can cause the contactor to drop out. disconnecting the motor from the line. The rapid re-energizing of the controller is in effect a fast reclosure which may result in motor damage. The time delay re-energizing of controller will result in a greater loss of speed and possibly loss of stability. Other means of controller can be used to prevent the motor from being disconnected from line during the fault. This can be accomplished by DC power controller or mechanically latched controller. This paper demonstrates that DC power controller or mechanically latched type controller to prevent the motor from being disconnected from line during the fault is, the most effective in minimizing speed reduction, transient motor current, transient motor torque and transient shaft torque by EMTP calculation.

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보호 회로를 포함한 무선 전력 전송용 ISM 13.56 MHz 20 W Class-E 앰프 설계 (Design of 20 W Class-E Amplifier Including Protection for Wireless Power Transmission at ISM 13.56 MHz)

  • 남민영;김영식
    • 한국전자파학회논문지
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    • 제24권6호
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    • pp.613-622
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    • 2013
  • 본 논문에서는 ISM 13.56 MHz 대역 무선 전력 전송을 위한 인덕티브 클램핑 class-E 전력증폭기를 설계 및 실험하여 특성을 분석하였다. 구현된 전력증폭기는 수신 안테나가 회전체에 붙는 경우와 같이 송수신 안테나 간의 정합 상태가 변화하는 시스템에서 부정합 상태에서 전력증폭기에 공급되는 전류를 줄여 트랜지스터를 손상시키지 않고 안정적으로 동작하도록 하는 인덕티브 클램핑 방식으로 설계되었으며, 정합 회로를 이용하여 기존의 class-E 전력증폭기보다 고조파 성분에 대한 Filtering 특성을 개선하였다. 구현된 전력증폭기의 입력 주파수는 13.56 MHz, 입력 전력 25 dBm, 동작 전압 DC 28 V에서 측정한 결과, 출력 전력은 43 dBm, 기본 주파수 성분과 2차 고조파 신호 간의 출력 전력 차이 55 dBc 이상, 소모 전류 830 mA으로 전력부가 효율(power added efficiency)은 85 %로 높게 측정됐다. 마지막으로, 수신 안테나를 회전체에 부착하고 구현된 전력증폭기로 송수신 안테나로 전력을 송출하는 실험을 진행하였으며, 송신 안테나의 부정합 상태에는 소모 전류가 420 mA까지 줄어들어 트랜지스터가 손상되지 않는 것을 확인하였다.

DC 원통형 반응성 스파트링을 이용한 ITO 형성에 관한 연구 (A study on the formation of ITO by reactive DC cylindrical sputtering)

  • 조정수;박정후;하홍주;곽병구;이우근
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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    • pp.35-38
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    • 1995
  • Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

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HVDC 송전을 위한 8-5kV급 광 구동 사이리스터의 설계 (The Design Concept of 8.5kV Light Triggering Thyristor(LTT) for HVDC Transmission)

  • 장창리;김상철;김은동;서길수;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.300-303
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    • 2003
  • The design rule for 8.5kV LTT was discussed here. An inherent integrated breakover diode (BOD) for self -protection function and multi-amplified gate (AG) for improved di/dt capability of LTT was introduced in principle. The trade-off between light triggering input source and high dV/dt limitation has been treated via narrow grooved P-base for gate design. Key process technology for LTT was given, too.

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High Speed InP HBT Driver Ie For Laser Modulation

  • Sung Jung Hoon;Burm Jin Wook
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.883-884
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    • 2004
  • High-speed IC for time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP heterojunction-bipolar-transistor (HBT) technology. The driver IC was developed for driving external modulators, featuring differential outputs and the operation speed up to 10 Gbps with an output voltage swing of 1.3 Vpp at each output which was the limit of the measurement. Because -3 dB frequency was 20GHz, this circuit will be operated up to 20Gbps. 1.3Vpp differential output was achieved by switching 50 mA into a 50 $\Omega$ load. The power dissipation of the driver IC was 1W using a single supply voltage of -3.5Y. Input md output return loss of the IC were better than 10 dB and 15 dB, respectively, from DC to 20GHz. The chip size of fabricated IC was $1.7{\Box}1.2 mm^{2}$.

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변압기 권선비의 변화에 따른 3상 DC 리액터형태 한류기의 단락실험 (Short Circuit Tests of the Three-Phase DC Reactor Type Fault Current Limiter in Changing of Turns Ratio of Transformers)

  • 이응로;이찬주;이승제;고태국;현옥배
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제51권6호
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    • pp.267-272
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    • 2002
  • This Paper deals with the short circuit tests of the three-Phase DC reactor type fault current limiter (FCL) in changing of turns ratio of transformers. The experiment of this paper is a preliminary step to develop the FCL's faculties for an application to high voltage transmission line. So, superconducting coil was made of Nb-Ti, low temperature superconductor, and the ratings of the power system of experimental circuit are 400V/7A class. A three-phase DC reactor type FCL consists of three transformers, six diodes, one superconducting coil and one cryostat. The important point of experimental analysis is transient period, the operating lagging time of circuit breaker. As the results of the experiment, the values are referred to the limitation rate about 77% and 90% when the turns ratio of transformer was 1:1 and 2:1 respectively.