• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.584-588
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• 2001

A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage Capacitor(HVC). Though it is simple, transformer is bulky, heavy and has low-efficiency. To improve this defect a high frequency inverter type power supply has been investigated and developed in recent years. But, because of additional control circuit and switching device, inverter-type power supply is more expensive than conventional one. In this study, A new pulse power supply for Microwave Oven using novel HVC embedded high frequency transformer is proposed for down-sizing, cost reduction, and efficiency emprovement of Inverter type power supply. Also, equivalent circuit model is derived by impedance measurements. And the operation of proposed pulse power supply is verified by simulations and experimental results.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.8
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• pp.102-108
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• 2005

In this paper, authors propose novel boost AC-DC converter of high power factor and analyze for waveform and harmonics component of input current. The input current waveform in the proposed converter is got to be a sinusoidal form of discontinuous pulse in proportion to magnitude of at input voltage under the constant duty cycle switching. Therefore, input power factor is nearly unity. Particularly, the stored energy of loss-less snubber capacitor is recovered with input side and increases input current from resonant operation. The result is that input power factor of the proposed converter is higher than that of conventional converter of high power factor. Some simulative results on computer and experimental results are included to confirm the validity of the analytical results.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.645-651
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• 2008

To reduce noise in high frequency and distortion of signal, the composition of $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$ and $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ was developed. The composition was not solid solution, but mixtures of various phases composed of Ca, Sr, Zr, Ti and Ba oxides. The dielectric constant increased, the quality factor and the insulation resistance decreased with $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ content. The composition of $0.4(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ satisfied the electric characteristics and the temperature coefficient of dielectric constant (TCC). In addition, the glass frit and $MnO_2$ also affected the electric characteristics. From the result of the best fit simulation, $MnO_2$ 0.3 mol%, the glass frit 0.6 wt% showed the insulation resistance $906{\Omega}{\cdot}F$, the quality factor 821, and the dielectric constant 92. With the selected composition, MLCC capacitors sized $4.5{\times}3.2{\times}2.5mm$ were manufactured with 105 layered of the dielectric thickness $16{\mu}m$ using Ni inner electrode, They represented the capacitance $98{\sim}102$ nF, the quality factor 1,200 and the insulation resistance $1,500{\Omega}{\cdot}F$. Also, they had high break-down voltage with $107{\sim}115V/{\mu}m$, and satisfied the SL TCC characteristics.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.1
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• pp.91-97
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• 2014

Recently, the LED(Light Emitting Diode) is expected to replace conventional lamps including incandescent, halogen and fluorescent lamps for some general illumination application, due to some obvious features such as high luminous efficiency, safety, long life, environment-friendly characteristics and so on. To drive the LED, a single stage PFC(Power Factor Correction) flyback converter has been adopted to satisfy the isolation, PFC and low cost. The conventional flyback LED driver has the serious disadvantage of high 120Hz output current ripple caused by the PFC operation. To overcome this drawback, a new PFC flyback with low 120Hz output current ripple is proposed in this paper. It is composed of 2 power stages, the DCM(Discontinuous Conduction Mode) flyback converter for PFC and BCM(Boundary Conduction Mode) boost converter for tightly regulated LED current. Since the link capacitor is located in the secondary side, its voltage stress is small. Moreover, since the driver is composed of 2 power stages, small output filter and link capacitor can be used. Especially, since the flyback is operated at DCM, the PFC can be automatically obtained and thus, an additional PFC IC is not necessary. Therefore, only one control IC for BCM boost converter is required. To confirm the validity of the proposed converter, theoretical analysis and experimental results from a prototype of 24W LED driver are presented.

• Journal of the Korean Society of Safety
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• v.36 no.2
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• pp.10-17
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• 2021

This paper presents the robust design of each component used in the development of an induction bolt heating system for dismantling the high-temperature high-pressure casing heating bolts of turbines in power plants. The induction bolt heating system comprises seven assemblies, namely AC breaker, AC filter, inverter, transformer, work coil, cable, and CT/PT. For each of these assemblies, the various failure modes are identified by the failure mode and effects analysis (FMEA) method, and the causes and effects of these failure modes are presented. In addition, the risk priority numbers are deduced for the individual parts. To ensure robust design, the insulated-gate bipolar transistor (IGBT), switched-mode power supply (SMPS), C/T (adjusting current), capacitor, and coupling are selected. The IGBT is changed to a field-effect transistor (FET) to enhance the voltage applied to the induction heating system, and a dual-safety device is added to the SMPS. For C/T (adjusting current), the turns ratio is adjusted to ensure an appropriate amount of induced current. The capacitor is replaced by a product with heat resistance and durability; further, coupling with a water-resistant structure is improved such that the connecting parts are not easily destroyed. The ground connection is chosen for management priority.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.127-127
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• 2011

전하 트랩형 비휘발성 메모리는 10년 이상의 데이터 보존 능력과 빠른 쓰기/지우기 속도가 요구 된다. 그러나 두 가지 특성은 터널 산화막의 두께에 따라 서로 trade off 관계를 갖는다. 즉, 두 가지 특성을 모두 만족 시키면서 scaling down 하기는 매우 힘들다. 이것의 해결책으로 적층된 유전막을 터널 산화막으로 사용하여 쓰기/지우기 속도와 데이터 보존 특성을 만족하는 Tunnel Barrier engineered Memory (TBM)이 있다. TBM은 가운데 장벽은 높고 기판과 전극쪽의 장벽이 낮은 crested barrier type이 있으며, 이와 반대로 가운데 장벽은 낮고 기판과 전극쪽의 장벽이 높은 VARIOT barrier type이 있다. 일반적으로 유전율과 밴드갭(band gap)의 관계는 유전율이 클수록 밴드갭이 작은 특성을 갖는다. 이러한 관계로 인해 일반적으로 crested type의 터널 산화막층은 high-k/low-k/high-k의 물질로 적층되며, VARIOT type은 low-k/high-k/low-k의 물질로 적층된다. 이 형태는 밴드갭이 다른 물질을 적층했을 때 전계에 따라 터널 장벽의 변화가 민감하여 전자의 장벽 투과율이 매우 빠르게 변화하는 특징을 갖는다. 결국 전계에 민감도 향상으로 쓰기/지우기 속도가 향상되며 적층된 유전막의 물리적 두께의 증가로 인해 데이터 보존 특성 또한 향상되는 장점을 갖는다. 본 연구에서는 SiO2/Al2O3 (2/3 nm)와 SiO2/HfAlO (2/3 nm)의 이중 터널 산화막을 증착 시킨 MIS capacitor를 제작한 후 터널 산화막에 전하가 트랩되는 것을 피하기 위하여 다양한 열처리 온도에 따른 current-voltage (I-V), capacitance-voltage (C-V), constant current stress (CCS) 특성을 평가하였다. 급속열처리 공정온도는 600, 700, 800, 900 ${^{\circ}C}$에서 진행하였으며, 낮은 누설전류, 터널링 전류의 증가, 전하의 트랩현상이 최소화되는 열처리 공정의 최적화 실험을 진행하였다.

• Journal of Power Electronics
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• v.14 no.2
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• pp.257-264
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• 2014

A novel converter-free AC LED driver that is highly resistant to the fluctuation of AC voltage is proposed in this study. By removing large passive components, such as the bulky capacitor and the large-value inductor, the integration of the driver circuit is enhanced while the driving current remains stable. The proposed circuit provides LED lamps with a driving current that can follow the sinusoid waveform to obtain a very high power factor (PF) and low total harmonic distortion (THD). The LED input current produced by this driving current is insensitive to fluctuations in the AC voltage. Users will thus not feel that LED lamps are flashing during the fluctuation. Experiment results indicate that the proposed system can obtain PF of 0.999 and THD as low as 3.3% for a five-string 6 W LED load under 220 V at 50 Hz.

• Journal of the Korean Solar Energy Society
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• v.29 no.2
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• pp.1-7
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• 2009

Use of the PV(photovoltaic) generation system is increased in such areas as remote mountain places or islands at which electrical energy is not serviced. The stand alone PV system is required the power storage products such as battery, fly wheel and super capacitor. Several lead storage batteries are connected in series to get high voltages. The life of lead storage battery is shortened when over charge or over discharge takes place. So, it is needed to control batteries not to be overcharged or be discharged deeply. Voltage of each battery was ignored in former control methods in which overall voltage was used to control charge or discharge battery. In this study, the charging and discharging voltage variations of sealed lead storage batteries with l2V/l.2A were investigated step by step experiments. The results of the test show that one should consider and specify the state of each battery to prevent overcharge or deep discharge. With the basis of the experiments, we designed a monitoring unit to monitor battery voltages simultaneously using micro-controller. The unit measures voltage of 20 batteries simultaneously and displays data on the color LCD monitor with curved line graph. It also sends data to PC using the RS232C communication port. The designed unit was adapted to stand alone PV system with 1kW capacity and lead storage batteries are connected to the PV generation system. The number of lead storage batteries was 10 in series and 12V/250Ah each. Resistive load with 3kW was used for discharging.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.3
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• pp.9-24
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• 1968

This report is concerned with the optimum design of hyper-aprupt p-n junctiea silion diode and fabriction of this diode usable for electrical tuning application. Impurity profile in the junction was assumed to clean exponential function. With this assunntion, an optimum criterion for designing standard AM radio tuning capacitor was derived. In the diffusion process, after aluminum and antimony as impurties were deposited in vacuum on a P-type silicon wafer, the diffusion was followed by loading the wafer into the high temperature furnace.