• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.4
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• pp.259-267
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• 2019

An active clamp flyback (ACF) converter applies a clamp circuit and circulates the energy of leakage inductance to the input side, thereby achieving a zero-voltage switching (ZVS) operation and greatly reducing switching losses. The switching losses are further reduced by applying a gallium nitride field effect transistor (GaN-FET) with excellent switching characteristics, and ZVS operation can be accomplished under light load with boundary conduction mode (BCM) operation. Optimal design is performed on the basis of loss analysis by selecting magnetization inductance based on BCM operation and a clamp capacitor for loss reduction. Therefore, the size of the reactive element can be reduced through high-frequency operation, and a high-efficiency and high-power-density converter can be achieved. This study proposes an optimal design for a high-efficiency and high-power-density BCM ACF converter based on GaN-FETs and verifies it through experimental results of a 65 W-rated prototype.

• Proceedings of the KIPE Conference
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• 2003.11a
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• pp.214-217
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• 2003

The connectorless power supply system on that multi-contact causes confidence when the wiring reconstructed in the rear. As you see above, contact points between sets and indoor space cause inferior function of audio frequency so it needs to be eliminated. This paper explains the structure of connectorless power supply to supply the system with power crossing the air gap in the part of inductively in the connectorless power supply of both magnetic and electrical model. To get maximum output of electrical load, compensating capacitor compensates to show inter-inductance, lequeage-inductance reducing the track-inductance and access the conditions for resonance. At that time it accesses the maximum electric power. The small change of the value of compensating capacitor causes the changes of maximum electric power. Here the power electronics technology is used not only in the industrial machinery but also in the home appliances so the switching power supply is used to actualize the miniaturization, lightweight, and high efficiency. Generally the condenser input methods are widely used in the rectification circuit of switching power supply, but condenser input method generate great quantity of high frequency components because with this method the current flows in the power input filtering condenser only around value of peak of ac input voltage. To solve these problems, installation of power factor improve circuit on the front of filtering capacitence was considered. Several methods were suggested regarding, but the active filter method which makes smalliging and highly power factor possible are the produce main stream. IC for power factor improvement can be utilized by CMOS process proposing low power consumption. When the high power factor is considered seriously in the power factor improvement circuit, active filter method is selected. In the active filter method, the boost converter is used. Regarding this ·the boost converter is needed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.241-241
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• 2010

New non-volatile memory with high density and high work-function metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, nano-dot layer of FePt with high density and high work-function (~5.2eV) was fabricated as a charge storage site in non-volatile memory, and its electrical characteristics were evaluated for the possibility of non-volatile memory in view of cell operation by Fowler-Nordheim (FN)-tunneling. Here, nano-dot FePt layer was controlled as a uniform single layer with dot size of under ~ 2nm and dot density of ${\sim}\;1.2{\times}10^{13}/cm^2$. Electrical measurements of MOS structure with FePt nano-dot layer shows threshold voltage window of ~ 6V using FN programming and erasing, which is satisfied with operation of the non-volatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with the similar dot density in our experiments. From these results, it is expected that this non-volatile memory using FePt nano-dot layer with high dot density and high work-function can be one of candidate structures for the future non-volatile memory.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.3
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• pp.283-292
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• 2011

This paper proposed a new multi-level inverter topology based on a H-bridge with two switches and two diodes connected to the DC-link. The output voltage of the proposed topology is quite closer to a sinusoidal waveform compared with a typical single phase inverter. The proposed multi-level inverter is applicable to a power conditioning system for renewable energy sources, and it can be also used as a building block of a cascaded multi-level inverter for a high voltage application. In case of conventional H-bridge type or NPC type multi-level inverter, 8 controllable switches are used to obtain a 5 level output voltage, but the proposed multi-level inverter requires only 6 controllable switches. Thus the circuit configuration is quite simple, reliable and cost-effective implementation is possible. The efficiency can be improved owing to the reduction of the switching loss. A new PWM method based on POD modulation is suggested which requires only one carrier signal. The switching sequence to make the capacitor voltage balanced is also considered. The feasibility is studied through simulation and experiment.

• Journal of Power Electronics
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• v.19 no.4
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• pp.881-893
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• 2019

This paper proposes a practical sliding-mode controller design for shaping the impedances of cascaded boost-converter power decoupling circuits for reducing the second order harmonic ripple in photovoltaic (PV) current. The cascaded double-boost converter, when used as power decoupling circuit, has some advantages in terms of a high step-up voltage-ratio, a small number of switches and a better efficiency when compared to conventional topologies. From these features, it can be seen that this topology is suitable for residential (PV) rooftop systems. However, a robust controller design capable of rejecting double frequency inverter ripple from passing to the (PV) source is a challenge. The design constraints are related to the principle of the impedance-shaping technique to maximize the output impedance of the input-side boost converter, to block the double frequency PV current ripple component, and to prevent it from passing to the source without degrading the system dynamic responses. The design has a small recovery time in the presence of transients with a low overshoot or undershoot. Moreover, the proposed controller ensures that the ripple component swings freely within a voltage-gap between the (PV) and the DC-link voltages by the small capacitance of the auxiliary DC-link for electrolytic-capacitor elimination. The second boost controls the main DC-link voltage tightly within a satisfactory ripple range. The inverter controller performs maximum power point tracking (MPPT) for the input voltage source using ripple correlation control (RCC). The robustness of the proposed control was verified by varying system parameters under different load conditions. Finally, the proposed controller was verified by simulation and experimental results.

• Journal of Power Electronics
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• v.14 no.2
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• pp.203-216
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• 2014

In the conventional dc-dc converter, a pair of additional diode and the adjacent passive component capacitor/inductor can be added to the circuit with an X-shape connection, which generates a family of new topologies. The novel circuits, also called diode-assisted dc-dc converter, enhance the voltage boost/buck capability and have a great potential for high step-up/step-down power conversions. This paper mainly investigates and compares conventional dc-dc converter and diode-assisted dc-dc converter in wide range power conversion from the aspects of silicon devices, passive components requirements, electro-magnetic interference (EMI) and efficiency. Then, a comprehensive comparison example of a high step-up power conversion system was carried out. The two kinds of boost dc-dc converters operate under the same operation conditions. Mathematical analysis and experiment results verify that diode-assisted dc-dc converters are very promising for simultaneous high efficiency and high step-up/step-down power conversion in distributed power supply systems.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.345-352
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• 2017

In this paper, a non-dissipative snubber for reducing the switching losses in the step down converter is proposed. The conventional step down converter, e.g., buck converter, suffers from serious switching losses and consequentially heat generation because of its hard switching. Thus, it is unsuitable for high switching frequency operation. Reduction of the reactive components' size, such as an output inductor and capacitor, is difficult. The proposed snubber can slow down the increasing current slopes and switch voltage at turn-on and turn-off transients, thereby significantly reducing the switching loses. Additionally, the slowly increasing current during switch turn-on transition, can effectively solve the output rectifier diode reverse recovery problem. Therefore, the proposed non-dissipative snubber not only leads to the efficiency of converter operation at high switching frequency but also reduces the reactive components size in proportion to the switching frequency. To confirm the validity of the proposed circuit, theoretical analysis and experimental results from a 150 W, 1 MHz prototype are presented.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.4
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• pp.178-184
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• 2005

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).

• Journal of Sensor Science and Technology
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• v.27 no.4
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• pp.269-274
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• 2018

High-sensitivity signal-to-noise ratio (SNR) microphones are essentially required for a broad range of automatic speech recognition applications. Piezoelectric microphones have several advantages compared to conventional capacitor microphones including high stiffness and high SNR. In this study, we designed a new piezoelectric membrane structure by using the finite elements method (FEM) and an optimization technique to improve the sensitivity of the transducer, which has a high-quality AlN piezoelectric thin film. The simulation demonstrated that the sensitivity critically depends on the inner radius of the top electrode, the outer radius of the membrane, and the thickness of the piezoelectric film in the microphone. The optimized piezoelectric transducer structure showed a much higher sensitivity than that of the conventional piezoelectric transducer structure. This study provides a visible path to realize micro-scale high-sensitivity piezoelectric microphones that have a simple manufacturing process, wide range of frequency and low DC bias voltage.