• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.6 s.249
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• pp.594-601
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• 2006

Optimization study has been carried out to design an energy efficient, high temperature vacuum furnace which satisfies users' design requirements. First of all, the transient temperature distribution and the uniform temperature zone results have been compared with the steady state results to validate the feasibility of using steady state solution when constructing the thermal analysis DB. In order to check the accuracy, the interpolated results using thermal analysis DB have been compared with the computational and the experimental results. In this study, total heat flux is selected as the objective function, and the geometry parameters of vacuum furnace including the thickness of insulator, the heat zone sizes and the interval between heater and insulator are the design variables. The Uniform temperature zone sizes and the wall temperature are imposed as the design constraints. With negligible computational cost a high temperature vacuum furnace which has $40\sim60%$ reduction in total heat flux is designed using thermal analysis DB.

• Journal of Powder Materials
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• v.5 no.4
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• pp.293-298
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• 1998

In all larger hardmetal workshops furnaces for dewaxing, vacuum sintering or vacuum and overpressure sintering are today's standard. The furnace technology is well established. Equipment specifications such as operating overpressure, determine sintering cost, product quality, safety and reliability of the furnace and ultimately influence the competitiveness of the hard metal procucer in the global market. Essential furnace requirements are an efficient utilization of the furnace, an environmental friendly dewaxing system, high temperature uniformity, metallurgical treatment with process gases, as well as reduced cooling time by means of rapid cooling. Examples of reduced sintering costs are described achieved using a new design of vacuum sintering furnace with an improved rapid cooling device, cooling times are reduced by up to 45%. Additionally, a cost comparison of two different designs of vacuum overpressure sintering furnaces are included.

• Journal of the Korean Society of Systems Engineering
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• v.1 no.1
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• pp.14-19
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• 2005

High temperature vacuum furnaces or high standard electric furnaces demand high technology level and high production cost. Therefore, an iterative design process and the optimization approach under integrated computing environment are required to reduce the development risk. Moreover, it also required to develop an integrated design software that can manage the centralized database system between factory and design department, and the automated furnace design and analysis. The developed software is dedicated to the development of the vacuum (electric) furnaces. Based on the distribute middleware system, the GUI module, the CAD module, the thermal analysis module and the optimization module are integrated. For the DBMS, Microsoft Access is employed, the GUI is developed using Visual Basic language, and AutoCAD is utilized for the configuration design. By investigating the analysis code interface, the analysis and optimization process, and the data communication method, the overall system architecture, the method to integrate the optimizer and ana lysis codes, and the method to manage the data flow are proposed and verified through the optimal furnace design.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2004.05a
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• pp.273-276
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• 2004

Multidisciplinary Design Optimization (MDO) is an individual and parallel design framework applied in designing large and complex systems. for successful implementation of MDO framework it is essential to manage data in efficient and integrated manner. In this study, we present a case study to implement database to support designing super high temperature vacuum furnace with MDO technology. For that purpose we first extract required data based on the analysis of design process and then data flows between different programs are analyzed. Finally an E-R diagram is presented to design database schema.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.326-336
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• 1997

From the concept that the ion implantation-induced defect is one of the major factors in determining source/drain junction characteristics, high quality ultra-shallow $p^+$-n junctions were formed through the control of ion implantation-induced defects in silicon substrate. In conventional process of the junction formation. $p^+$ source/drain junctions have been formed by $^{49}BF_2^+$ ion implantation followed by the deposition of TEOS(Tetra-Ethyl-Ortho-Silicate) and BPSG(Boro-Phospho-Silicate-Glass) films and subsequent furnace annealing for BPSG reflow. Instead of the conventional process, we proposed a series of new processes for shallow junction formation, which includes the additional low temperature RTA prior to furnace annealing, $^{49}BF_2^+/^{11}B^+$ mixed ion implantation, and the screen oxide removal after ion implantation and subsequent deposition of MTO (Medium Temperature CVD oxide) as an interlayer dielectric. These processes were suggested to enhance the removal of ion implantation-induced defects, resulting in forming high quality shallow junctions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.10-11
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• 2006

In this study, the Ni/Co/TiN (6/2/25 nm) structure was deposited for thermal stability estimation. Vacuum (30 mTorrs) annealing was carried out to compare with furnace annealing in nitrogen ambient. The proposed Ni/Co/TiN structure exhibited low temperature silicidation and wide range of rapid thermal process (RTP) windows. The sheet resistance was too high to measure after furnace annealing at $600^{\circ}C$ due to the thin thickness (15 nm) of the nickel silicide. However, the sheet resistance maintained stable characteristics up to $600^{\circ}C$ for 30 min after vacuum annealing. Therefore, the low resistance of thin film nickel silicide was obtained by vacuum annealing at $600^{\circ}C$.

• Korean Chemical Engineering Research
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• v.58 no.4
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• pp.581-587
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• 2020

In this study, a new reaction system is proposed to solve the problems of the existing 2,3-Butanediol (2,3-BDO) dehydration reaction system. It was confirmed that the reaction system did not wok as it should operate properly when using a furnace, which is commonly used in commercial processes, to raise the reactant, 2,3-BDO, to the reaction temperature, 360 ℃, at near atmoshperic pressure. It is because of the substance considered to be oligomers of 2,3-BDO. It can lead to safety problems, such as blockages inside the furnace's tube and explosions, as well as tricky maintenance issues in the reaction system. To solve it, the temperature of reactant can be brought down by using a heat exchanger with High Pressure (HP) steam instead of the furnace, which has a hot spot problem through the vacuum operation and reduce the reaction temperature. It can be seen that the reactor performance is almost similar under the vacuum operation and the lower reaction temperature, 330 ℃, by using a reaction kinetics. This result explains why the new reaction system is proposed.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1596-1598
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• 2002

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.