• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.353-356
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• 2004

This paper discribes the analysis of the I-V characteristics of 4H-SiC DiMOSFET with single epi-layer Silicon Carbide has been around for over a century. However, only in the past two to three decades has its semiconducting properties been sufficently studied and applied, especially for high-power and high frequency devices. We present a numerical simulation-based optimization of DiMOSFET using the general-purpose device simulator MINIMIS-NT. For simulation, a loin thick drift layer with doping concentration of $5{\times}10^{15}/cm^3$ was chosen for 1000V blocking voltage design. The simulation results were used to calculate Baliga's figure of Merit (BFOM) as the criterion structure optimization and comparison.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1018-1019
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• 2015

Recently, standby power reduction techniques of AC/DC adaptor were developed, consuming power almost arrived to 300mW level. The standby power losses are composed of the input filter loss 11.8mW, the control IC for AC/DC adaptor 18mW, the switching loss 9.53mW and the feedback loss 123mW. And there are the standby power reduction techniques. In this paper, in order to reduce the standby power of SMPS more, the loss due to a voltage difference between input and output is reduced by the control circuit which is composed of the low voltage driving circuit and voltage regulator. The low voltage driving circuit operates on the low voltage of input and off the high voltage. The low voltage driving IC was produced by the $1.0{\mu}m$, high voltage DMOS process.

• Proceedings of the KIEE Conference
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• summer
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• pp.1531-1533
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• 2004

Standby power is progressively important in the developed countries including Korea. The status of standby power of korean home electronic wares has been unknown. In this paper, standby power consumption of home electronics in Korea has been firstly surveyed and reported. Over 800 pieces of electrical equipments that consume standby power in 53 households were investigated. The average standby power per equipment and total standby power per household were 3.66W and 57.0W, respectively. It was revealed that Audio systems and network appliances such as xDSL modem, set-top box generally consume high standby power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.486-489
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• 2015

Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.36-37
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• 2013

This paper presents high voltage operation sensing boost converter with high side current. Proposed topology has three functions which are high voltage driving, high side current sensing and low voltage boost controller. High voltage gate driving block provides LED dimming function and switch function such as a load switch of LED driver. To protect abnormal fault and burn out of LED bar, it is applied high side current sensing method with high voltage driver. This proposed configuration of boost converter shows the effectiveness capability to LED driver through measurement results.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2143-2145
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• 2005

Power semicondcutor인 IGBT MOSFET, GTO, SI-Thyristor등은 높은 스위치 신뢰성과 life time, 그리고 fast repetition rate 등을 지니고 있기 때문에 medium/High voltage영역에서 스위치 사용이 대두되어 왔으나, Thyratron이나 Trigatron(Gap switch)와 비교하여 낮은 전압/전류를 스위칭하기 때문에 전통적으로 직렬연결을 통해 high voltage 영역의 스위치로 사용되어 왔다. 하지만, 직렬연결되어 있는 각각의 power semiconductor와 gate driving circuit의 on/off synchronization이 맞지 않기 때문에 부하의 급격한 변화에 따른 전압의 balance에 문제가 가장 심각하게 대두되어 왔다. 이러한 문제를 해결하기 위해서 gate driving circuit에서 제어를 해주는 방법과 power semiconductor에서 제어를 해주는 방법이 있으나 두 방식 모두 문제점이 있다. 본 논문에서는 기존의 zener clamping방식에서 벗어나 새로운 active clamping방식의 직렬연결을 제안했으며 시뮬레이션과 실험을 통해 나타난 이 결과들은 on/off transient 시 symmetry를 유지하는데 효과적이라는 것을 보여주고 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.175-181
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• 2006

Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.45-48
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• 2007

The proposed method offers an improved DC/DC converter scheme to increase power density. It is based on half-bridge topology with newly introduced pulse-grouping control method, which helps to reduce the transformer size and the volume of semiconductor devices maintaining high efficiency. Test results with 85W(18.5V/4.6A) design shows that the measured efficiency is 93.5% with power density of $36W/in^3$.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.71-78
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• 2014

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.7-10
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• 2010

In this paper, we design a modem SoC (System on Chip) for low power consumption and high speed wireless communications. Among various schemes of high speed communications, an MB-OFDM (Multi Band-Orthogonal Frequency Division Multiplexing) UWB (Ultra-Wide-Band) chip is designed. The MB-OFDM uses wide-band frequency to provide high speed data rate. Additionally, the system imposes no interference to other services. The 90nm CMOS (Complementary Metal-Oxide Semiconductor) technology is used for the SoC design. Especially, power management mode is implemented to reduce the power consumption.