• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.5
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• pp.391-398
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• 2014

This paper presents a resonant step-down DC/DC converter to reduce the voltage stresses of a 3-phase inverter module under the three-phase AC utility line condition. Under this condition, a conventional 3-phase inverter module suffers from high voltage stresses as a result of the high rectified DC link voltage; hence, a high-cost high-voltage-rating inverter module must be used. However, using the proposed converter, a low-cost low-voltage-rating inverter module may be adopted to drive the motor even under the 3-phase AC line condition. The proposed converter, which can be realized with small size inductor and low-voltage-rating semiconductor devices, operates at a high-efficiency mode because of the zero-current switching operations of all the semiconductor devices. The operational principles are explained and a design example is provided in the study. Experimental results demonstrate the validity of the proposed converter.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.2
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• pp.169-177
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• 2013

This paper proposes a new configuration of bidirectional intelligent semiconductor transformer with rating of 1.9kV/127V, 2kVA. The proposed transformer consists of high-voltage high-frequency AC-DC rectifier, and low-voltage DC-DC and DC-AC converters. The operational feasibility of proposed transformer was verified by computer simulation with PSCAD/EMTDC software. Based on the simulation results, a hardware prototype with rating of 1.9kV/127V, 2kVA was built and tested in the lab to confirm the feasibility of hardware implementation. Using three units of this transformer, a 3-phase transformer with rating of 3.3kV/220V, 6kVA can be built.

• IE interfaces
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• v.22 no.3
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• pp.252-262
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• 2009

It is crucial to prevent low yields in the semiconductor industry. Since many factors affect variation in yield and they are deeply related, preventing low yield is difficult. There have been substantial researches in the field of yield prediction. Many researchers had used the statistical methods. Many studies have shown that artificial neural network (ANN) achieved better performance than traditional statistical methods. However, despite ANN's superior performance some problems such as over-fitting and poor explanatory power arise. In order to overcome these limitations, a relatively new machine learning technique, support vector machine (SVM), is introduced to classify the yield. SVM is simple enough to be analyzed mathematically, and it leads to high performances in practical applications. This study presents a new efficient classification methodology, Stepwise-SVM (SSVM), for detecting high and low yields. SSVM is step-by-step adjustment of parameters to be precisely the classification for actual high and low yield lot. The objective of this paper is to examine the feasibility of SVM and SSVM in the yield classification. The experimental results show that SVM and SSVM provides a promising alternative to yield classification for the field data.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.7-17
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• 2014

Power electronics modules are semiconductor components that are widely used in airplanes, trains, automobiles, and energy generation and conversion facilities. In particular, insulated gate bipolar transistors(IGBT) have been widely utilized in high power and fast switching applications for power management including power supplies, uninterruptible power systems, and AC/DC converters. In these days, IGBT are the predominant power semiconductors for high current applications in electrical and hybrid vehicles application. In these application environments, the physical conditions are often severe with strong electric currents, high voltage, high temperature, high humidity, and vibrations. Therefore, IGBT module packages involves a number of challenges for the design engineer in terms of reliability. Thermal and thermal-mechanical management are critical for power electronics modules. The failure mechanisms that limit the number of power cycles are caused by the coefficient of thermal expansion mismatch between the materials used in the IGBT modules. All interfaces in the module could be locations for potential failures. Therefore, a proper thermal design where the temperature does not exceed an allowable limit of the devices has been a key factor in developing IGBT modules. In this paper, we discussed the effects of various package materials on heat dissipation and thermal management, as well as recent technology of the new package materials.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.5
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• pp.459-465
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• 2011

Excessive heat may be generated during the semiconductor manufacturing process. Therefore, precise control of temperature is required to maintain a constant ambient temperature and wafer temperature in the chamber. Compared to an industrial chiller, a semiconductor chiller's power consumption is high because it is in continuous operation for a year. Because of this high power consumption, it is necessary to develop an energy-efficient chiller by optimizing the operation. The competitiveness of domestic products is low because of the high energy consumption. We experimentally investigated a domestic semiconductor by conducting load change, temperature rise and fall, and control precision experiments. The experimental study showed that the chiller had 2.1-3.9 kW of cooling capacity and 0.56-0.93 of EER. The control precisions were ${\pm}1^{\circ}C$ and ${\pm}0.6^{\circ}C$ when the setting temperatures were $0^{\circ}C$ and $30^{\circ}C$ respectively.

• Journal of Power Electronics
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• v.9 no.3
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• pp.464-471
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• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.51-51
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1018-1022
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.55-58
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• 2014

The next-generation AlGaN/GaN HEMT power devices need higher power at higher frequencies. To know the device characteristics, the simulation of those devices are made. This paper presents a simulation study on the DC and RF characteristics of AlGaN/GaN HEMT power devices. According to the reduction of gate length from $2.0{\mu}m$ to $0.1{\mu}m$, the simulation results show that the drain current at zero gate voltage increases, the gate capacitance decreases, and the maximum transconductance increases, and thus the cutoff frequency and the maximum oscillation frequency increase. The maximum oscillation frequency maintains higher than the cutoff frequency, which means that the devices are useful for power devices at very high frequencies.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.157-160
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• 2021

In this paper, a 20W class multi-output QR flyback converter for auxiliary power supply was designed to stabilize 4 output voltages, and the efficiency and load characteristics were compared and analyzed. It was checked if each output affects other output characteristics through experiment. As a result, the experimental circuit reached a high efficiency of 82.5% or more at a load power of over 20W, and the maximum power loss was 2.6W. Consequently, it was confirmed that all of 4 output voltages of the multi-output QR flyback converter constructed in this paper were stabilized within 0.5% in full-load range, and each output was independently controlled in an electrically isolated state.