• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.6
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• pp.231-237
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• 2016

This paper presents a multiband low phase noise CMOS VCO with wide frequency tunability using switched bondwire inductor bank. The combination of bondwire inductor and CMOS switch transistor enhances frequency tunability and improves phase noise characteristics. The proposed multiband VCO operates from 2.3GHz to 6.3GHz with phase noise of -136dBc/Hz and -122dBc/Hz at 1 MHz offset frequency, respectively. Switched bondwire inductor bank shows high quality factor(Q) at each frequency band, which allows better tradeoff between phase noise and power consumption. The proposed VCO is designed in TSMC 0.18um CMOS process and consumes 7.2 mW power resulting in figure of merit(FOM) of -189.3dBc/Hz at 1 MHz offset from 6GHz carrier frequency.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.6
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• pp.699-706
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• 2015

A previous adapter have a single-ouput, however, a demand of a multi-output adapter increase in the recent industrial site. In order to satisfy the demand, in this research, we implement a programmable high efficiency multi-output adapter. The basic structure of the adapter introduced in this paper is a sort of flyback. The way for producing the reference voltage of the adapter proposed is similar to the way in the general flyback implemented with TL431. In addition to the basic concept of the design, however, we introduce a digital variable resistor, AD5246BKSZ10-RL7 and a microcontroller for changing a programmable multi-output. It makes output be variable that the digital variable resistor change the reference voltage of the adapter by order of the microcontroller. The adapter output voltage is controllable in the range of 20V by the user, and the power efficiency is proven to be 85%.

• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.504-508
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• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.125.2-125.2
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• 2011

We are developing medium resolution cross-dispersed silicon grisms in the near IR region ($1.45{\sim}5.2{\mu}m$). The grisms will be installed in MIMIR, a multifunction instrument at the Lowel Observatory, USA. The two devices are designed to cover H and K band and L and M band simultaneously. Our goal is to make grism with R=3000 at 1.2 arcsec slit. The Silicon has high refractive index (n=3.4 at $1.5{\mu}m$) which enhances the resolving power by up to 5 times when compared to conventional material such as BK-7 (n=1.5 at 1.5 ${\mu}m$). The bonded grisms will be installed in a filter wheel for the uses switch from spectroscopic mode to imaging mode easily. Our device is compact and light weighted while it provides a decent resolving power. We produce monolithic grisms using e-beam lithography at the NASA JPL and chemically etching the grooves on the silicon prisms. Moreover, the main-disperser and cross-disperser will be contacted together by direct Si-Si bonding technique and eventually turn into one piece. The bonded pair offers more stability in terms of the layout of the spectrum and removes the Fresnel loss at the intersection of two grisms. We report on the proper wafer bonding steps through this research, and inspected the bonding quality thermally, optically and mechanically.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.1
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• pp.86-93
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• 2003

This paper describes that the resonant tank type DC-DC converter consist of reactor and capacitor resonant tank circuit for increased the output current. This circuit configuration is composed of the resonant tank circuit used resonant capacitor and reactor and the capacitor connected in switch are a common using by resonance capacitor and ZVS(Zero Voltage Switching) capacitor. Therefore, the proposed converter can reduce a switching losses, noise, and voltage stress at turn-on and turn-on and has an advantage which is able to operating safely in load short, because DC reactor is connected with resonance reactor in order to supply a fixed current with low ripple from DC power supply. The analysis of proposed circuit uses normalized parameters and characteristic estimation is generally described the proposed circuit with the characteristics of power and output voltage etc. Also, design is based on the characteristic estmations in each step. Hence, We conform a rightfulness theoretical analysis by comparing a theoretical values and experimental values obtained from experiment.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.5
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• pp.953-965
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• 2023

The stratospheric drones are developed to perform missions such as weather observation, communication relay, surveillance, and reconnaissance at 18km to 20km, where climate change is minimal and there is no worry about a collision with aircraft. It uses solar panels for daytime flights and energy stored in batteries for night flights, providing many advantages over existing satellites. The electrical and power systems essential for stratospheric drone flight must ensure reliability, efficiency, and lightness by selecting the optimal circuit topology. Therefore, it is necessary to analyze the circuit topology of various types of multi-level inverters with high redundancy that can ensure the reliability and efficiency of the motor driving power required for stable long-term flight of stratospheric drones. By quantifying the switch element voltage drop and the number and weight of inverter components for each topology, we evaluate efficiency and lightness and propose the most suitable circuit topology for stratospheric drones.

• Journal of the Korean Society of Clothing and Textiles
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• v.35 no.3
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• pp.292-303
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• 2011

This research suggested a draft proposal for a smart jacket design, which has applied wearable technologies to provide convenience in daily life. The smart jacket combined with a vest was the casual item for autumn and winter. The heating device was composed of the heating element, battery, controller, electric wire, connector, switch, and charger. A stable electronic conductor fiber of good heating effect with a flexible zigzag form has been selected for the heating element. The lighting device has been made in a way that attaches the LED and its power controller in the same mechanical device. As the result of the wearing test, the heating effect turned out to be effective in the order of: back, both the back and abdomen and only the abdomen. When wearing a smart jacket, the back and abdomen have been selected as favorable body parts for heating. Pockets and hems are selected as the adequate place to attach the LED lighting, and the brightness of LED lighting has turned out to be suitable and useful. Based on the test results, the first draft proposal has attached the heating element only in the back and its controller located in the inside pocket of the vest. In addition, the LED has been attached to the front pocket of the jacket. As to the second draft proposal, heating elements have been placed in the back and the abdomen. Each controller for the heating elements has been placed in the front and inside pocket of vest, and the LED lighting has been attached to the hem of the jacket. The smart jacket combined with a wearable device was assessed by functioning categories. The user showed a high satisfaction in the heating and illuminating function of a smart jacket.

• Journal of Satellite, Information and Communications
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• v.7 no.1
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• pp.75-81
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• 2012

This study is to design the transmitter and receiver of short range UWB(Ultra Wide Band) imaging radar that is able to display high resolution radar image for front area of a UGV(Unmanned Ground Vehicle). This radar can help a UGV to navigate autonomously as it detects and avoids obstacles through foliage. The transmitter needs two transmitters to improve the azimuth resolution. Multi-channel receivers are required to synthesize radar image. Transmitter consists of high power amplifier, channel selection switch, and waveform generator. Receiver is composed of sixteen channel receivers, receiver channel converter, and frequency down converter, Before manufacturing it, the proposed architecture of transceiver is proved by modeling and simulation using several parameters. Then, it was manufactured by using industrial RF(Radio Frequency) components and all other measured parameters in the specification were satisfied as well.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.97-105
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• 2020

Recently, as the data speed and operating frequencies of Ethernet keeps increasing, electro magnetic interference (EMI) also becomes increasing. The generation of such EMI will cause malfunction of near electronic devices. In this study, EMI filters were applied to reduce the EMI generated by DC-DC SMPS (switching mode power supply), which is the main cause of EMI generation of Ethernet switch. As the EMI filter, MLCCs with excellent withstanding voltage characteristics were used, which had advantages in miniaturization and mass production. Two types of EMI MLCC filters were used, which are X-capacitor and X, Y-capacitor. X-capacitor was composed of 2 MLCCs with 10 nF and 100 nF capacity and 1 Mylar capacitor. Y-capacitor was consisted of 6 MLCCs with a capacity of 27 nF. When only X-capacitor was applied as EMI filter, the conductive EMI field strength exceeded the allowable limit in frequency range of 150 kHz ~ 30 MHz. The radiative EMI also showed high EMI strength and very small allowable margin at the specific frequencies. When the X and Y-capacitors were applied, the conductive EMI was greatly reduced, and the radiation EMI was also found to have sufficient margin. In addition, X, Y-capacitors showed very high insulation resistance and withstanding resistance performances. In conclusion, EMI X, Y-capacitors using MLCCs reduced the EMI noise effectively and showed excellent electrical reliability.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.126-142
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• 2016

This paper presents a wide-frequency-range, low-power transceiver with an automatic impedance-matching calibration for TV-white-space (TVWS) application. The wide-range automatic impedance matching calibration (AIMC) is proposed for the Drive Amplifier (DA) and LNA. The optimal $S_{22}$ and $S_{11}$ matching capacitances are selected in the DA and LNA, respectively. Also, the Single Pole Double Throw (SPDT) switch is integrated to share the antenna and matching network between the transmitter and receiver, thereby minimizing the systemic cost. An N-path filter is proposed to reject the large interferers in the TVWS frequency band. The current-driven mixer with a 25% duty LO generator is designed to achieve the high-gain and low-noise figures; also, the frequency synthesizer is designed to generate the wide-range LO signals, and it is used to implement the FSK modulation with a programmable loop bandwidth for multi-rate communication. The TVWS transceiver is implemented in $0.13{\mu}m$, 1-poly, 6-metal CMOS technology. The die area of the transceiver is $4mm{\times}3mm$. The power consumption levels of the transmitter and receiver are 64.35 mW and 39.8 mW, respectively, when the output-power level of the transmitter is +10 dBm at a supply voltage of 3.3 V. The phase noise of the PLL output at Band 2 is -128.3 dBc/Hz with a 1 MHz offset.