• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.667-670
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• 2010

In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

• Proceedings of the KIPE Conference
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• 1998.11a
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• pp.39-43
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• 1998

A large number of soft switching topologies included a resonant circuit have been proposed. But these circuits increase number of switch in circuit and complicate sequence of switching operation. In this paper, the authors propose power conversion system, DC-AC inverter of high efficiency and high power factor with soft switching mode by partial resonant method. The switching devices in a proposed circuits are operated with soft switching by the partial resonant method, that is, PRS2MPC (Partial Resonant Soft Switching Mode Power Converter). The result is that the switching loss is very low and the efficiency of system is high. And the snubber condenser used in partial resonant circuit makes charging energy regenerated at input power source for resonant operation.

• Journal of Power Electronics
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• v.6 no.1
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• pp.1-7
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• 2006

This paper is a record of the study on a high efficiency and high power chopper based on the new soft switching method QRAS (Quasi~resonant Regenerating Active Snubber) designed for a Fuel Cell Electric Vehicle (FCEV). This power chopper is basically proposed for 25kHz soft switching. To confirm the practicality and effectiveness of the converter, the fabrication of a prototype-model using IGBTs was completed. Additionally, a 8kW rating test, a light load test, a current discontinuous mode test and a stable operation resonance test was completed. The circuit geometry, the basic operation, and the 8kW one-tenth-prototype test results are reported with a $97.5\%$ efficiency measurement.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1521-1523
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• 2005

High voltage plasma power supply was adopted to control polluted gases and an ozone generation. Bidirectional pulse power supply consisted of power semiconductor switch devices, a high voltage transformer, and a control board adapted switching method. Plasma power supply with sinusoidal bidirectional pulse, which has output voltage range of 0-20kV and output frequency range of 1kHz-20kHz, is realized. Using proposed system, pulsed high voltage/high frequency discharges were tested in a DBD(dielectric barrier discharge) reactor, and the spatial distribution of a glow discharge was observed. The system showed stable operational characteristics, even though the voltage and the frequency increased. Above features were verified by experiments.

• Journal of Korea Multimedia Society
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• v.19 no.2
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• pp.352-359
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• 2016

This paper presents high efficiency 5A synchronous DC-DC buck converter. The proposed DC-DC buck converter works from 4.5V to 18V input voltage range, and provides up to 5A of continuous output current and output voltage adjustable down to 0.8V. This chip is packaged MCP(multi-chip package) with control chip, top side P-CH switch, and bottom side N-CH switch. This chip is designed in a 25V high voltage CMOS 0.35um technology. It has a maximum power efficiency of up to 94% and internal 3msec soft start and fixed 500KHz PWM(Pulse Width Modulation) operations. It also includes cycle by cycle current limit function, short and thermal shutdown protection circuit at 150℃. This chip size is 2190um*1130um includes scribe lane 10um.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.520-522
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• 2008

A novel two-switch active clamp forward converter suitable for high input voltage applications is proposed. The main advantage of the proposed converter, compared to the conventional active forward converters, is that circuit complexity is reduced and the voltage stress of the main switches is effectively clamped to either the input voltage or the clamping capacitor voltage by two clamping diodes without limiting the maximum duty ratio. Also, the clamping circuit does not include additional active switches, so a low cost can be achieved without degrading the efficiency. Therefore, the proposed converter can feature high efficiency and low cost for high input voltage applications. The operational principles, features, and design considerations of the proposed converter are presented in this paper. The validity of this study is confirmed by the experimental results from a prototype with 200W, 375V input, and 12V output.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.129-131
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• 1993

Power conversion system of high performance requires high switching frequency power converter. In order to minimize commutation stress and switching losses, in this paper, AC-DC converter is embedded a partial resonant DC-Link circuit with the object of ZVCS(zero voltage switching and zero current switching). The partial resonant occurs just before converter switch operates. Thus, VA ratings of the elements and their dissipations due to effective series resistance (ESR) are very low. Some simulative results on computer are included to confirm the validity of the analytical results.

• Journal of IKEEE
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• v.16 no.3
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• pp.217-223
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• 2012

This paper presents design and operational characteristics of 150 MW pulse power system for high current pulse forming network to control trigger time. The system is composed of two capacitor bank modules. Each capacitor bank module consist of a trigger vacuum switch, 9k 33kJ capacitor, an energy dump circuit, a crowbar circuit and a pulse shaping inductor and is connected in parallel. It is controlled by trigger controller to select operational module and determine triggering time. Pspice simulation was conducted about determining parameters of components such as crowbar circuit, capacitor, pulse forming inductor, trigger vacuum switch and predicting results of experiment circuit. The result of the experiment was in good agreement with the result of the simulation. The various current shapes with 300~650 us pulse width is formed by sequential firing time control of capacitor bank module. The maximum current is about 40 kA during simultaneous triggering of two capacitor bank modules. The developed 150 MW pulse power system can be applied to high current pulse power system such as rock fragmentation power sources, Rail gun, Coil gun, nano-powers, high power microwave.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.363-365
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• 2006

소비자의 요구와 기술력의 발달로 PDP시장은 42인치와 60인치등 대형PDP가 주류를 이루고 있으며 대형화에 따라서 PDP전원의 소모전력 또한 $400W{\sim}600W$ 까지 증가 하고 있다. 기존 소용량 PDP전원으로 사용되던 Flyback의 경우 소모 전력이 증가함에 따라 대형PDP에 적용하기에는 소자 내압 및 시스템 효율 측면에서 다소 무리가 있다. 따라서 대형PDP의 전원을 위해서 새로운 2 Switch 3 Diode를 채용한 고효율 DCR (Diode Clamping Rectifier) Flyback Converter를 제안하였으며 이를 42인치 PDP에 적용하여 회로의 타당성 및 우수성을 검증하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.2A
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• pp.201-206
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• 2006

A SPST Switch MMIC which used for Microwave Switch Matrix(MSM) of communications satellite payload with multi-beam function has been designed and fabricated. New RE FET switch configuration has been devised to improve power characteristics and isolation. Input and output return losses are better than another switches reported previously for both On and Off states. The MMIC chips were fabricated in 0.15um GaAs pHEMT process and measured insertion loss less than 2.0dB and isolation more than 63dB in the frequency range of 3GHz$\∼$4GHz. Output 3rd order interceptpoint above 32dBm has been recorded and the value is very high even though the unit pHEMT has gate width of 0.2mm and only four pHEMT are used in the MMTC.