• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1516-1517
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• 2007

This paper investigated the breakdown effect of the CMOS device by impact of high power electromagnetic wave. The experiments employed a waveguide to study the current characteristics of CMOS device broken by high power electromagnetic wave. The CMOS device were composed of a LED drive circuit for visual discernment. Also CMOS device broken by high power electromagnetic wave was observed by power current. The CMOS device were broke by high power electromagnetic wave at about 10 kV/m and when power current is 75 mA. Based on the result, CMOS devices should show plan to protect the CMOS devices by high power electromagnetic wave. And the database from this experiment should provide the basis for future investigation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1638-1642
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• 2007

This paper investigated the destruction effect of the semiconductors by impact of high power electromagnetic wave. The experiments is employed as an open-ended waveguide to study the destruction effects on semiconductor using a 2.45 GHz 600 W Magnetron as a high power electromagnetic wave. The semiconductors are located at a distance of $31cm\sim40cm$ from the open-ended waveguide and are composed of a LED drive circuit for visual discernment. Also the chip condition of semiconductor is observed by SEM(Scanning Electron Microscope) analysis. The semiconductor are damaged by high power electromagnetic wave at about 860 V/m. The SEM analysis of the destructed devices showed onchipwire and bondwire destructions. Based on the result, semiconductor devices should have plan to protect the semiconductor devices form high power electromagnetic wave. And the database from this experiment provides the basis for future investigation.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1664-1666
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• 2001

This paper presents the development of electromagnetic wave detecting equipment for diagnosis of enclosed switchboard. High voltage power equipments are very important equipment of the key industries and the private enterprise. Power line accidents are national plans because of those set off casualties lose of power equipments and communication networks. Therefore the necessity of the development of detecting for power equipment diagnosis is demand for prevention of high voltage equipment accidents. This paper is the development of electromagnetic wave detecting equipment for diagnosis of high voltage equipment. This paper establishes the diagnosis method for high voltage power equipments, that secures original technique and possesses detecting technique for electromagnetic wave. By the study we developed electromagnetic wave detector, and we applied this equipment application tests at the place constructed high voltage equipments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.178-181
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• 2001

This paper presents the development of electromagnetic wave detecting equipment for diagnosis of enclosed switchboard. High voltage power equipments are very important equipment of the key industries and the private enterprise. Power line accidents are national plans because of those set off casualties lose of power equipments and communication networks. Therefore the necessity of the development of detecting for power equipment diagnosis is demand for prevention of high voltage equipment accidents. This paper is the development of electromagnetic wave detecting equipment for diagnosis of high voltage equipment. This paper establishes the diagnosis method for high voltage power equipments, that secures original technique and possesses detecting technique for electromagnetic wave. By the study we developed electromagnetic wave detector, and we applied this equipment application tests at the place constructed high voltage equipments.

• Proceedings of the KIEE Conference
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• 2000.11b
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• pp.318-320
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• 2000

This paper presents the develop-ment of electromagnetic wave detecting equipment for diagnosis of enclosed switchboard. High voltage power equipments are very important equipment of the key industries and the private enterprise power line accidents are national plans because of those set off casualties lose of power equipments and communication networks. Therefore the necessity of the development of detecting for power equipment diagnosis is demand for prevention of high voltage equipment accidents. This paper is the development of electromagnetic wave detecting equipment for diagnosis of high voltage equipment. This paper establishes the diagnosis method for high voltage power equipments, that secures original technique and possesses detecting technique for electromagnetic wave. By the study we developed electromagnetic wave detector and we applied this equipment application tests at the place constructed high voltage equipments.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.6
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• pp.148-155
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• 2008

We investigated the damage effects of microcontroller devices under high power electromagnetic(HPEM) wave. HPEM wave was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.559-564
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• 2016

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

• Journal of electromagnetic engineering and science
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• v.16 no.4
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• pp.225-228
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• 2016

KRISS-V, a V-band millimeter-wave source module for a primary RF power standard and calibration system developed by the Korea Research Institute of Standards and Science is here presented. The output power of KRISS-V is several times higher than that of commercial amplifier/multiplier chains and is highly stable (the standard deviations of output power are less than 0.01% in the worst case). The spectral purity of KRISS-V is high enough to consider it a single-tone signal generator. We also added programmable attenuation capability to KRISS-V for remote power control. Moreover, the in-house source module is cost-effective and adaptable to various measurement schemes. The structure of the model as well as detailed component information are introduced so that it can be reproduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.221-225
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• 2014

In modern times, threat of high power electromagnetic wave is increasing. When the electrical grid and communication network are attacked by these high power electromagnetic wave, the whole infrastructure is paralyzed. To protect the infrastructure from these high power electromagnetic wave threat, the shielding facility that can block high power electromagnetic wave is constructed. Also shielding effectiveness evaluation about the constructed facility is important. But, because of space efficiency and saving of construction cost to construct the actual shielding facility, the shielding room wall is generally adjacent to exterior concrete structures. As space between shielding facility wall and concrete structures is very small, arranging the transmitting antenna exterior shielding facility is realistically difficult. Therefore, in this research, The shielding effectiveness measurement plan in the state of exterior narrow space of HEMP shielding facility is presented. And to apply this plan, The influence of shielding effectiveness according to the size of the shielding facility is analyzed.

• Journal of the Korean Magnetics Society
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• v.23 no.2
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• pp.68-76
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• 2013

Currently, wireless power transmission technology based on magnetic induction was employed in battery charger for smart phone application. The system consists of wireless power transmitter in base station and receiver in smart phone. Size and thickness of receiver was strictly limited in the newest smart phone. In order to achieve high efficiency of a tiny small wireless power receiver module, sub-millimeter thick electromagnetic wave shielding sheet having high permeability and Q was essential component. It was found that magnetic field from transmitter to receiver can be intensified by sufficient shielding cause to minimize leakage magnetic flux by those magnetic properties. This leads to high efficiency of wireless power transmission and protects crucial integrated circuit of main board from electromagnetic noise. The important soft magnetic materials were introduced and summarized for the current small-power wireless power charger and NFC application and mid-power home appliance and high-power automotive application in the near future.