• 제목/요약/키워드: High Power Electromagnetic Wave

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의도 고출력 전자파에 의해 오동작 되는 CMOS소자의 전류특성 (Current Characteristics of CMOS device Broken by Intentional High Power Electromagnetic Wave)

  • 황선묵;홍주일;한승문;박신우;허창수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1516-1517
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    • 2007
  • This paper investigated the breakdown effect of the CMOS device by impact of high power electromagnetic wave. The experiments employed a waveguide to study the current characteristics of CMOS device broken by high power electromagnetic wave. The CMOS device were composed of a LED drive circuit for visual discernment. Also CMOS device broken by high power electromagnetic wave was observed by power current. The CMOS device were broke by high power electromagnetic wave at about 10 kV/m and when power current is 75 mA. Based on the result, CMOS devices should show plan to protect the CMOS devices by high power electromagnetic wave. And the database from this experiment should provide the basis for future investigation.

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고출력 과도전자파에 의한 반도체 소자의 파괴효과 (The Destruction Effects of Semiconductors by High Power Electromagnetic Wave)

  • 황선묵;홍주일;허창수
    • 전기학회논문지
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    • 제56권9호
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    • pp.1638-1642
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    • 2007
  • This paper investigated the destruction effect of the semiconductors by impact of high power electromagnetic wave. The experiments is employed as an open-ended waveguide to study the destruction effects on semiconductor using a 2.45 GHz 600 W Magnetron as a high power electromagnetic wave. The semiconductors are located at a distance of $31cm\sim40cm$ from the open-ended waveguide and are composed of a LED drive circuit for visual discernment. Also the chip condition of semiconductor is observed by SEM(Scanning Electron Microscope) analysis. The semiconductor are damaged by high power electromagnetic wave at about 860 V/m. The SEM analysis of the destructed devices showed onchipwire and bondwire destructions. Based on the result, semiconductor devices should have plan to protect the semiconductor devices form high power electromagnetic wave. And the database from this experiment provides the basis for future investigation.

전자파 검출에 의한 전력기기 On-Line 열화 측정시스템 개발 (Development of on-line system using electromagnetic wave for diagnosis of deteriorated power equipment)

  • 강창원;최길수;이영상;김창욱;강대수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1664-1666
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    • 2001
  • This paper presents the development of electromagnetic wave detecting equipment for diagnosis of enclosed switchboard. High voltage power equipments are very important equipment of the key industries and the private enterprise. Power line accidents are national plans because of those set off casualties lose of power equipments and communication networks. Therefore the necessity of the development of detecting for power equipment diagnosis is demand for prevention of high voltage equipment accidents. This paper is the development of electromagnetic wave detecting equipment for diagnosis of high voltage equipment. This paper establishes the diagnosis method for high voltage power equipments, that secures original technique and possesses detecting technique for electromagnetic wave. By the study we developed electromagnetic wave detector, and we applied this equipment application tests at the place constructed high voltage equipments.

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전자파를 이용한 폐쇄배전반내 전력기기의 열화 온라인 진단시스템 개발 (Development of on-line system using electromagnetic wave for diagnosis of deteriorated power equipment in enclosed switchboard)

  • 강창원;최길수;이영상;강대수;김재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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    • pp.178-181
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    • 2001
  • This paper presents the development of electromagnetic wave detecting equipment for diagnosis of enclosed switchboard. High voltage power equipments are very important equipment of the key industries and the private enterprise. Power line accidents are national plans because of those set off casualties lose of power equipments and communication networks. Therefore the necessity of the development of detecting for power equipment diagnosis is demand for prevention of high voltage equipment accidents. This paper is the development of electromagnetic wave detecting equipment for diagnosis of high voltage equipment. This paper establishes the diagnosis method for high voltage power equipments, that secures original technique and possesses detecting technique for electromagnetic wave. By the study we developed electromagnetic wave detector, and we applied this equipment application tests at the place constructed high voltage equipments.

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폐쇄 배전반에서의 부분 방전 On-Line 열화 감시 시스템 개발 (Development of electromagnetic wave detecting equipment for diagnosis of partial discharge in enclosed switchboard)

  • 전광호;강창원;김재철;김광화;강대수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 추계학술대회 논문집 학회본부 B
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    • pp.318-320
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    • 2000
  • This paper presents the develop-ment of electromagnetic wave detecting equipment for diagnosis of enclosed switchboard. High voltage power equipments are very important equipment of the key industries and the private enterprise power line accidents are national plans because of those set off casualties lose of power equipments and communication networks. Therefore the necessity of the development of detecting for power equipment diagnosis is demand for prevention of high voltage equipment accidents. This paper is the development of electromagnetic wave detecting equipment for diagnosis of high voltage equipment. This paper establishes the diagnosis method for high voltage power equipments, that secures original technique and possesses detecting technique for electromagnetic wave. By the study we developed electromagnetic wave detector and we applied this equipment application tests at the place constructed high voltage equipments.

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고출력 전자기파의 커플링 효과에 의한 마이크로컨트롤러 소자의 피해 (The Damage of Microcontroller Devices due to Coupling Effects by High Power Electromagnetic Wave)

  • 홍주일;황선묵;허창수
    • 한국군사과학기술학회지
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    • 제11권6호
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    • pp.148-155
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    • 2008
  • We investigated the damage effects of microcontroller devices under high power electromagnetic(HPEM) wave. HPEM wave was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects.

협대역 고출력 전자기파로 인한 CMOS IC에서의 오동작 특성 연구 (A Study on Malfunction Mode of CMOS IC Under Narrow-Band High-Power Electromagnetic Wave)

  • 박진욱;허창수;서창수;이성우
    • 한국전기전자재료학회논문지
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    • 제29권9호
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    • pp.559-564
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    • 2016
  • This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

Development of a V-Band Millimeter-Wave Source Module

  • Kwon, Jae-Yong;Lee, Dong-Joon;Bakti, Aditia Nur;Angin, Windi Kurnia Perangin
    • Journal of electromagnetic engineering and science
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    • 제16권4호
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    • pp.225-228
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    • 2016
  • KRISS-V, a V-band millimeter-wave source module for a primary RF power standard and calibration system developed by the Korea Research Institute of Standards and Science is here presented. The output power of KRISS-V is several times higher than that of commercial amplifier/multiplier chains and is highly stable (the standard deviations of output power are less than 0.01% in the worst case). The spectral purity of KRISS-V is high enough to consider it a single-tone signal generator. We also added programmable attenuation capability to KRISS-V for remote power control. Moreover, the in-house source module is cost-effective and adaptable to various measurement schemes. The structure of the model as well as detailed component information are introduced so that it can be reproduced.

방호 시설 크기에 따른 전계강도 및 차폐 효과 비교 (Electric Field Strength and Shielding Effectiveness Comparison According to the Size of Shielding Facility)

  • 강호재;허창수;방정주;최진수;박우철
    • 한국전기전자재료학회논문지
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    • 제27권4호
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    • pp.221-225
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    • 2014
  • In modern times, threat of high power electromagnetic wave is increasing. When the electrical grid and communication network are attacked by these high power electromagnetic wave, the whole infrastructure is paralyzed. To protect the infrastructure from these high power electromagnetic wave threat, the shielding facility that can block high power electromagnetic wave is constructed. Also shielding effectiveness evaluation about the constructed facility is important. But, because of space efficiency and saving of construction cost to construct the actual shielding facility, the shielding room wall is generally adjacent to exterior concrete structures. As space between shielding facility wall and concrete structures is very small, arranging the transmitting antenna exterior shielding facility is realistically difficult. Therefore, in this research, The shielding effectiveness measurement plan in the state of exterior narrow space of HEMP shielding facility is presented. And to apply this plan, The influence of shielding effectiveness according to the size of the shielding facility is analyzed.

휴대단말기 무선전력 전송모듈용 전자기파 차폐소재 (Electromagnetic wave Shielding Materials for the Wireless Power Transfer Module in Mobile Handset)

  • 배석;최돈철;현순영;이상원
    • 한국자기학회지
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    • 제23권2호
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    • pp.68-76
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    • 2013
  • 자기유도형 기반의 무선전력 전송 기술을 이용한 무선충전 기능이 최근 스마트폰 등에 채용되어 주요한 소비자 편의기능으로 자리잡고 있다. 무선전력전송 모듈은 무선전력 전송효율을 개선하고 휴대폰 주요 회로부에 대한 전자기장 간섭을 억제하기 위하여 전자기장 차폐 소재의 사용이 필수적이다. 본 논문에서는 무선전력 전송모듈용 전자기장 차폐 소재의 역할과 기술에 대해 소개하였다. 이와 함께 향후 확산될 중급 전력(mid-power)과 대전력(high-power)영역의 무선전력 전송 응용분야에서 대응 가능한 차폐 소재의 개발 방향을 정리하였다.