• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국의학물리학회지:의학물리
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• 제20권1호
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• pp.7-13
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• 2009

본 논문은 물 흡수선량 표준에 기반하여 근접치료 선원인 $^{192}Ir$을 교정하는 것에 대한 예비적 연구를 위한 것이다. 이온함을 사용하여 물흡수선량 표준에 기반하여 근접치료 선원을 교정하기 위해선, 빔 선질 교정인자인 $k_{Q,Q_0}$가 필요하다. 본 연구에선 일차 표준을 사용하여 지정된 거리에서의 흡수선량를 측정하는 데 있어서의 현실적인 어려움 때문에 몬테칼로 전산모사와 반실험적인 방법을 통하여 $k_{Q,Q_0}$를 결정하였다. 본 연구를 위해 PTW30013 이온함 5개를 선택하였다. 포괄적 $k^{gen}_{Q,Q_0}$ 값의 경우엔 이온함간 변화가 최대 4.0%에 이른 반면, 개별적 $k^{ind}_{Q,Q_0}$ 경우엔 이온함간 변화가 최대 0.5% 이내였다. 이 결과는 물 흡수선량에 기반하여 근접치료 선원인 $^{192}Ir$을 교정시에 이온함을 왜 개별적으로 교정해야 하는지, 개별적인 교정이 얼마나 중요한 지를 보여 준다. 가까운 장래에 공기커마 세기 대신에 사용자가 근접치료 선원을 고에너지 광자빔과 전자빔의 교정에서처럼 치료에서 관심있는 물리량인 물흡수선량의 관점에서 교정할 수 있기를 희망한다.

• 한국의학물리학회지:의학물리
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• 제14권4호
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• pp.249-258
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• 2003

흡수선량 측정의 정확성을 향상시키기 위하여 기존의 공기커마 혹은 조사선량 표준에서 물 흡수선량 표준으로 선량측정의 패러다임이 변화하고 있다. 본 연구는 기존의 프로토콜에서 물 흡수선량 기반의 프로토콜로의 전환을 모색하는 입장에서 현재 임상에서 널리 사용하고 있는 IAEA TRS­277과 물 흡수선량 표준에 토대를 두고 있는 IAEA TRS­398 및 AAPM TG­51 프로토콜에 대하여 동일한 기준깊이에서 물 흡수선량을 측정하여 상호 비교하였다. Varian 2100 C/D 선형가속기로부터의 세 종류의 전자선 에너지에 대해 PTW 30002 원통형 이온함과 Markus 및 Roos 평행평판형 이온함을 사용하여 측정하였고 $^{60}$Co에서의 공기커마 및 물 흡수선량 교정정수는 식품의약품안전청으로부터 받아 사용하였다. 공기커마 표준에 기반한 프로토콜과 물 흡수선량 표준에 기반한 프로토콜간에는 2% 이내의 차이를 보임으로써 사용자 기관에서는 자체적인 확인을 거쳐 공기커마 기반의 프로토콜에서 물 흡수전량 기반 프로토콜로의 전환을 적극 검토해 볼 필요가 있다. 물 흡수선량 기반의 프로토콜간에는 원통형 이온함의 경우 0.5% 이내에서 잘 일치하였고 평행평판형 이온함의 경우에도 고 에너지 전자선을 이용한 교차 교정을 하면 0.7% 이내에서 잘 일치하였다. 사용한 모든 프로토콜과 전자선 에너지에 대해 원통형 이온함과 평행평판형 이온함간에는 2% 이내의 차이를 보였으나 선량측정의 정확성을 향상시키기 위해 물 흡수선량 표준에 기반한 프로토콜의 권고에 따라서 하한에너지 이하의 전자선의 경우는 원통형 이온함 대신에 평행평판형 이온함을 사용함이 타당하다고 사료된다.

• 대한핵의학회지
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• 제25권2호
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• pp.286-293
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• 1991

$^{123}I$, which is applied for the thyroid and other in vivo kinetic study, has a special role in life sciences. The 159 KeV $\gamma-ray$ from $^{123}I$ is almost ideally appropriate for the current imaging instrumentation. Its decay mode (electron capture) and short half-life (13.3 hr) reduced the burden of radiation dose to the patients, and its chemical property makes it easy to synthesize the labelling compounds. In this experiment, the production of $^{123}I$ via the nuclear reaction $^{124}Te(p,2n)^{123}I$ with 28 MeV protons was sutdied. $TeO_2$ is used as a target material, because it has good physical properties. The target was prepared with $TeO_2$ powder and was molten into a ellipsoidal cavity (a=14 mm, b=10 mm, $270.8mg/cm^2$ thick) of pure platinum. The irradiation was carried out in the external proton beam with incident energies range from 28 MeV to 22 MeV, and current was $30{\mu}A$. The loss of $TeO_2$ target was significantly reduced by using $4\pi-cooling$ system in irradiation. The dry distillation method was adopted for the separation of $^{123}I$ from irradiated target, and when it was kept 5 minutes at $780^{\circ}C$, its result was quantitative. The loss of the target material $(TeO_2)$ was below 0.2% for each production run and $^{123}I$ from the dry distillation apparatus was captured with 0.01 N NaOH in $Na^{123}I$ form, then the pH of the solution was adjusted to $7.5\sim9.0$ with HC1/NaOH. The $Na^{123}I$ solution was passed through $0.2{\mu}m$ membrane filter, and sterilized under high pressure and temperature for 30 minutes. The production of $^{123}I$ is acceptable for clinical application based on the quality of USP XXI.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.612-619
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• 2002

The dynamic behavior of Al-Mg alloys plasma was very unstable and this instability was closely related to the unstable motion of keyhole during laser irradiation. The keyhole fluctuated both in size and shape and its fluctuation period was about 440 ${\mu}{\textrm}{m}$. This instability has been estimated to be caused by the evaporation phenomena of metals with different boiling point and latent heats of vaporization. Therefore, the authors have conducted the spectroscopic diagnostics of plasma induced in the pulsed YAG laser welding of Al-Mg alloys in air and argon atmospheres. In the air environment, the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn, and singly ionized Mg line, as well as strong molecular spectrum of AlO, MgO and AIH. It was confirmed that the resonant lines of Al and Mg were strongly self-absorbed, in particular in the vicinity of pool surface. The self-absorption of atomic Mg line was more eminent in alloys containing higher Mg. These facts showed that the laser-induced plasma was relatively a low temperature and high density metallic vapor. The intensities of molecular spectra of AlO and MgO were different each other depending on the power density of laser beam. Under the low power density irradiation condition, the MgO band spectra were predominant in intensity, while the AlO spectra became much stronger in higher power density. In argon atmosphere the band spectra of MgO and AlO completely vanished, but AlH molecular spectra was detected clearly. The hydrogen source was presumably the hydrogen solved in the base Metal, absorbed water on the surface oxide layer or H$_2$ and $H_2O$ in the shielding gas. The temporal change in spectral line intensities was quite similar to the fluctuation of keyhole. The time average plasma temperature at 1 mm high above the surface of A5083 alloy was determined by the Boltzmann plot method of atomic Cr lines of different excitation energy. The obtained electron temperature was 3, 280$\pm$150 K which was about 500 K higher than the boiling point of pure aluminum. The electron number density was determined by measuring the relative intensities of the spectra1lines of atomic and singly ionized Magnesium, and the obtained value was 1.85 x 1019 1/㎥.

• 한국재료학회지
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• 제19권4호
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• pp.224-227
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• 2009

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).

• 한국진공학회지
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• 제12권4호
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• pp.275-280
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• 2003

Si(III) 표면위에 Gd$_2O_3:Eu^{3+}$ 결정성 형광체 박막을 이온화 집단체 증착방법으로 증착하여 이온선을 주입, 결정을 파괴한 후에 열처리를 통하여 결정구조를 변화시켰다. 초기 생장시의 결정성은 고에너지 전자회절 (RHEED)을 통해 확인하고, X선 회절과 적외선 분광법을 이용하여 시료의 결정구조의 변화를 관측하였다. Near Edge X-ray Absorption Fine Structure (NEXAFS)를 통해 전자구조의 변화를 확인하였다. 이러한 변화들이 발광 특성에 미치는 영향을 Photoluminescence (PL), Cathodoluminescence (CL), 그리고 Vacuum Ultraviolet (VUV) spectrum으로 알아보았다. 본 연구는 결정구조에 의해 변화된 전자구조가 형광체 박막의 발광특성에 미치는 영향을 보고한다.

• Journal of Welding and Joining
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• 제27권6호
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• pp.68-73
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• 2009

Recently, as titanium and titanium alloys are being increasingly used in wide areas, there are on-going researches to obtain high quality weld zone. In particular, growing interest is being drawn to laser welding, which involves low heat input and large aspect ratio in various welding processes and can facilitate shield in atmospheric condition compared with electron beam welding. The first report covered the analysis of embrittlement by the bead color of weld zone through quantitative analysis of oxygen and nitrogen and measurement of hardness as basic experiment to apply laser welding to titanium. Results indicated that the element that affect embrittlement the most was nitrogen, and as embrittlement and oxygenation go on, bead color changed to silver, gold, brown, blue and gray. This study performed butt welding of pure titanium and STS304 by using 1kW CW Nd:YAG laser, and to find out basic physical properties, evaluated welding performance by laser output, welding speed, root gap and misalignment etc, and examined mechanical properties through tensile stress and Erichsen test. The reason particles of pure titanium welded metal and HAZ are greater than STS304 is because they are pure metal and do not include many impure elements that work as nuclei in case of resolidification, thus becoming coarse columnar crystals eventually. In addition, the reason STS304 requires more energy during welding than pure titanium is because the particle size of base metal is smaller.

• 한국초전도ㆍ저온공학회논문지
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• 제9권1호
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• pp.18-21
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• 2007

Highly textured MgO template by ion-beam-assisted deposition(IBAD) was successfully fabricated using a continuous reel-to-reel(R2R) mode. To enlarge the deposition area, the previous IBAD system was modified into the system with 14-pass and five heating zone. Every processing step was carried out using this multi-turn IBAD system. The overall process consists of R2R electropolishing of a hastelloy C276 tape, deposition of $Al_2O_3$ diffusion barrier, $Y_2O_3$ seed layer, IBAD-MgO and homoepi-MgO layer. The IBAD-MgO templates were fabricated using the IBAD system with 216 cm-length deposition zone and 32 cm diameter ion source. The texture of MgO films developed during the IBAD process was monitored by in-situ reflection high energy electron diffraction(RHEED) to optimize the IBAD process. Recently, 100 m long IBAD-MgO tape with in-plane texture of $\Delta{\phi}<10^{\circ}$ was successfully fabricated using the modified IBAD system. In this report, the detailed deposition condition of getting a long length IBAD-MgO template with a good epitaxy is described.

• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2139-2146
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• 2023

During reactor operation, the divertor must withstand unprecedented simultaneous high heat fluxes and high-energy neutron irradiation. The extremely severe service environment of the divertor imposes a huge challenge to the bonding quality of divertor joints, i.e., the joints must withstand thermal, mechanical and neutron loads, as well as cyclic mode of operation. In this paper, potassium-doped tungsten (KW) is selected as the plasma facing material (PFM), oxygen-free copper (OFC) as the interlayer, oxide dispersion strengthened copper (ODS-Cu) alloy as the heat sink material, and reduced activation ferritic/martensitic (RAFM) steel as the structural material. In this study, a vacuum brazing technology is proposed and optimized to bond Cu and ODS-Cu alloy with the silver-free brazing material CuSnTi. The most appropriate brazing parameters are a brazing temperature of 940 ℃ and a holding time of 15 min. High-quality bonding interfaces have been successfully obtained by vacuum brazing technology, and the average shear strength of the as-obtained KW/Cu and ODS-Cu alloy joints is ~268 MPa. And a fabrication route for manufacturing the flat-type divertor target based on brazing technology is set. For evaluating the reliability of the fabrication technologies under the reactor relevant condition, the high heat flux test at 20 MW/m² for the as-manufactured flat-type KW/Cu/ODS-Cu/RAFM mockup is carried out by using the Electron-beam Material testing Scenario (EMS-60) with water cooling. This paper reports the improved vacuum brazing technology to connect Cu to ODS-Cu alloy and summarizes the production route, high heat flux (HHF) test, the pre and post non-destructive examination, and the surface results of the flat-type KW/Cu/ODS-Cu/RAFM mockup after the HHF test. The test results demonstrate that the mockup manufactured according to the fabrication route still have structural and interfacial integrity under cyclic high heat loads.