• 대한두경부종양학회지
• /
• 제16권2호
• /
• pp.167-171
• /
• 2000

Objectives: To compare the outcomes of treatment with a focus on the effectiveness of the two primary techniques of radiation used for treating parotid gland malignancies. Materials and Methods: A retrospective analysis of 70 patients with parotid gland cancer treated between 1981-1997. Radiation was delivered through an ipsilateral field of high energy electron and photon in 37 patients(52.9%). Two wedge paired photon was used to treat in 33 patients(47.1%). The median dose was 60 Gy, typically delivered at 1.8-2.0Gy per fraction. The median follow-up times for surviving patients was 60 months. Results: The overall and disease free 5 year survival rates were 71.6% and 69.5%, respectively. Wedge paired photon and photon-electron treatment disease tree 5 year survival rates were 61.1% and 80.5%, respectively. Overall local failure rate was 18.6%. Local failure rate of wedge paired photon technique was higher than that of mixed beam technique. Late complication rate was 37.1%, but most of them were mild grade. Conclusion: Techniques of radiation were associated with local control. The technique of using an ipsilateral field encompassing the parotid bed and treated with high energy electrons often mixed photons was effective with minimal severe late toxicity. To irradiate deep sited tumors, we consider 3-D conformal treatment plan for well encompassing the target volume.

• 한국의학물리학회지:의학물리
• /
• 제22권3호
• /
• pp.148-154
• /
• 2011

TRS-398 프로토콜에서 중심전극에 대한 최근의 연구 결과들을 적용하여 선질인자($k_{Q,Q_0}$)를 평가하였다. 대상 전리함은 PTW-31010과 IBA-CC13이었다. 광자선 및 전자선 선질의 함수로서 선질인자를 계산하였으며 현재 TRS-398 프로토콜의 값들과 비교하였다. PTW-31010 전리함과 같이 알루미늄 전극으로 구성된 전리함에 대하여 새로운 보정을 취하는 경우에 선질인자가 광자선에서 최대 0.4% 그리고 전자선에서 최대 0.9% 증가하는 것으로 나타났다. 또한 IBA-CC13과 같이 C-552 전극을 사용하는 전리함의 경우에 기존의 보정체계를 그대로 적용할 수 있음을 확인하였다.

• 한국진공학회지
• /
• 제18권5호
• /
• pp.352-357
• /
• 2009

본 연구에서는 1.1 eV의 에너지대역을 흡수할 수 있는 InAs 양자점구조와 1.3 eV의 에너지 대역을 흡수 할 수 있는 InGaAs 양자우물구조를 이용한 텐덤형 태양전지의 구조를 1D poisson을 이용해 설계하고, 분자선 에피택시 장비를 이용하여 각각 5, 10, 15층씩 쌓은 양자점 및 양자우물구조를 삽입하여 p-n접합을 성장하였다. Photoluminescence (PL) 측정을 이용한 광학적특성 평가에서 양자점 5층 및 양자우물 10층을 삽입한 구조의 PL 피크가 가장 높은 상대발광강도를 나타냈으며, 각각 1.1 eV 및 1.3 eV에서 57.6 meV 및 12.37 meV의 Full Width at Half Maximum을 나타내었다. 양자점의 밀도 및 크기는 Reflection High-Energy Electron Diffraction system과 Atomic Force Microscope를 이용해 분석하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 I-V 측정을 통하여 GaAs층의 두께(20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. GaAs 층의 두께가 30 nm 및 50 nm의 터널접합에서는 backward diode 특성을 나타낸 반면, 20 nm GaAs층의 GaAs/AlGaAs 터널접합에서는 다이오드 특성 곡선을 확인하였다.

• 한국레이저가공학회지
• /
• 제9권2호
• /
• pp.23-30
• /
• 2006

Silicon Nitride $(Si_3N_4)$, which is widely used in a variety of applications, is hard-to-machine due to its high hardness. At high temperature (e.g. above $1000^{\circ}C)$, however, the machinability can be greatly improved. In this work, we used a $CO_2$ laser with a high absorptivity to $Si_3N_4$ of 0.9 to locally heat the surface of a rotating $Si_3N_4$ rod on a lathe. In order to examine the effects of the laser-assisted heating on hardness, an $Si_3N_4$ rod is heated to temperatures from 900 to $1800^{\circ}C$ and is rotated at speeds from 440-900 rpm in experiments. When the rod is naturally cooled to room temperature, we measured the Vickers hardness (Hv); and observed the surface of HAZ using a scanning electron microscopy (SEM). Energy dispersive spectroscopy (EDS) was used for ingredient analysis. Results showed that when heated at $1600^{\circ}C$, the hardness of $Si_3N_4$ decreased from 1500 Hv to 1000 Hv. Also, in order to predict the depth of HAZ, we numerically analyzed the laser-assisted heating of $Si_3N_4$.

• 한국레이저가공학회:학술대회논문집
• /
• 한국레이저가공학회 2006년도 춘계학술발표대회 논문집
• /
• pp.16-24
• /
• 2006

Silicon Nitride ($Si_3N_4$), which is widely used in a variety of applications, is hard-to-machine due to its high hardness. At high temperature (e.g. above $1000^{\circ}C$), however, the machinability can be greatly improved. In this work, we used a $CO_2$ laser with a high absorptivity to $Si_3N_4$ of 0.9 to locally heat the surface of a rotating $Si_3N_4$ rod on a lathe. In order to examine the effects of the laser-assisted heating on hardness, an $Si_3N_4$ md is heated to temperatures from 900 to $1800^{\circ}C$ and is rotated at speeds from 440-900 rpm in experiments. When the rod is naturally cooled to room temperature, we measured the Victors hardness (Hv): and observed the surface of HAZ using a scanning electron microscopy (SEM). Energy dispersive spectroscopy(EDS) was used for ingredient analysis. Results showed that when heated at $1600^{\circ}C$, the hardness of $Si_3N_4$ decreased from 1500 Hv to 1000 Hv. Also, in order to predict the depth of HAZ, we numerically analyzed the laser-assisted heating of $Si_3N_4$.

• 광물과 암석
• /
• 제33권4호
• /
• pp.419-426
• /
• 2020

비전통 저류층에서 에너지 자원의 회수율을 높이기 위해서는 저류층 내의 미세 공극 형태와 연결도 등을 포함하는 공극 구조 연구가 필수적이다. 본 연구에서는 셰일 저류층 내 나노스케일의 공극 구조 연구에 적합한 조건과 방법을 찾기 위해 집속 이온 빔 시스템(Focused Ion Beam, FIB)과 이온 밀링 시스템(Ion Milling System, IMS)을 이용하여 분석을 진행하였다. 셰일 저류층 내 공극 구조 연구를 위해 리아드 분지에서 획득된 A-068 시추공의 시료를 사용하였다. 각 시료마다 특성이 다르기 때문에 시료 전처리 방법과 조건을 달리하여 최적의 조건을 찾았고 FE-SEM을 이용하여 공극 이미지를 획득하였다. 연구 결과 국소 부위의 공극구조를 관찰하기 위해서는 FIB를 사용하여 시표 표면을 밀링 후 바로 공극 이미지를 얻는 것이 효율적이고 반면에 넓은 면적을 단시간에 밀링하여 여러 공극 구조를 관찰하기 위해서는 IMS를 이용해야 한다는 것을 확인했다. 특히 탄산염 광물 함량이 높고 강도가 큰 암석에 대해서는 FIB보다는 IMS를 활용하여 밀링을 수행해야 공극 구조 관찰이 가능하다는 사실이 밝혀졌다. 본 연구를 통해 셰일 저류층 내 공극 구조 관찰을 위한 방법이 정립되었으며 향후 이를 이용한 셰일 가스 저류층 시료 분석을 통해 공극의 크기나 형태가 셰일가스 회수 증진에 미치는 영향을 밝힐 수 있을 것이다.

• Nuclear Engineering and Technology
• /
• 제50권6호
• /
• pp.937-943
• /
• 2018

Background: This work presents the performance of a novel electronic brachytherapy (EBT) device and radiotherapy (RT) experiments on both skin cancer cells and animals using the device. Methods and materials: The performance of the EBT device was evaluated by measuring and analyzing the dosimetric characteristics of X-rays generated from the device. The apoptosis of skin cancer cells was analyzed using B16F10 melanoma cancer cells. Animal experiments were performed using C57BL/6 mice. Results: The X-ray characteristics of the EBT device satisfied the accepted tolerance level for RT. The results of the RT experiments on the skin cancer cells show that a significant apoptosis induction occurred after irradiation with 50 kVp X-rays generated from the EBT device. Furthermore, the results of the animal RT experiments demonstrate that the superficial X-rays significantly delay the tumor growth and that the tumor growth delay induced by irradiation with low-energy X-rays was almost the same as that induced by irradiation with a high-energy electron beam. Conclusions: The developed new EBT device has almost the same therapeutic effect on the skin cancer with a conventional linear accelerator. Consequently, the EBT device can be practically used for human skin cancer treatment in the near future.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.370.1-370.1
• /
• 2014

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active areas of research. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, ~100% spin polarization (P), and has a high Curie temperature (TC~850 K). On the other hand, Spinel ferrite CoFe2O4 has been widely studies for various applications such as magnetorestrictive sensors, microwave devices, biomolecular drug delivery, and electronic devices, due to its large magnetocrystalline anisotropy, chemical stability, and unique nonlinear spin-wave properties. Here we have investigated the magneto-transport properties of epitaxial CoxFe3-xO4 thin films. The epitaxial CoxFe3-xO4 (x=0; 0.4; 0.6; 1) thin films were successfully grown on MgO (100) substrate by molecular beam epitaxy (MBE). The quality of the films during growth was monitored by reflection high electron energy diffraction (RHEED). From temperature dependent resistivity measurement, we observed that the Werwey transition (1st order metal-insulator transition) temperature increased with increasing x and the resistivity of film also increased with the increasing x up to $1.6{\Omega}-cm$ for x=1. The magnetoresistance (MR) was measured with magnetic field applied perpendicular to film. A negative transverse MR was disappeared with x=0.6 and 1. Anomalous Hall data will be discussed.

• 대한방사선치료학회지
• /
• 제25권2호
• /
• pp.145-151
• /
• 2013

목 적: 본 연구에서 우리는 6 MeV 전자선의 조사야 확대에 따른 선량변화가 차폐물질 원자번호와 관계가 있음을 알아보고 그 영향인자를 분석 하고자 한다. 대상 및 방법: 먼저 평행평판형 전리함(Exradin P11)을 $25{\times}25cm^2$ 폴리스티렌 팬텀표면에 평탄하게 끼운다. 허용투과율 5% 두께의 알루미늄, 구리, 납 물질들을 팬텀 상단에 차폐시킨 후 조사야 $6{\times}6$, $10{\times}10$ 그리고 $20{\times}20cm^2$별로 측정하였다. 조사조건은 선원-표면간거리 100 cm에서 기준조사야인 $10{\times}10cm^2$에 6 MeV 전자선을 이용하여 100 cGy 조사하였다. 다음으로 MCNP (Monte Carlo N Particle Transport Code)를 이용하여 각 물질 통과 후 발생되는 광자수, 전자수, 그리고 축적에너지를 계산하였다. 결 과: 허용투과율 5% 두께에 대한 차폐물 종류에 따른 측정결과 조사야 $10{\times}10cm^2$을 기준으로 한 $6{\times}6cm^2$과 $20{\times}20cm^2$의 두께변화율은 알루미늄에서 각각 +0.06%와 -0.06%, 구리에서 각각 +0.13%와 -0.1%, 납에서 각각 -1.53%와 +1.92%였다. 계산결과 조사야 $10{\times}10cm^2$ 대비 $6{\times}6cm^2$, $20{\times}20cm^2$의 축적에너지는 차폐를 하지 않았을 경우 각각 -4.3%와 +4.85%, 알루미늄 사용 시 각각 -0.87%와 +6.93%, 구리 사용 시 각각 -2.46%와 +4.48%, 납 사용 시 각각 -4.16%와 +5.57%였다. 광자수의 경우 차폐를 하지 않았을 경우 각각 -8.95%와 +15.92%, 알루미늄 사용 시 각각 -15.56%와 +16.06%, 구리 사용시 각각 -12.27%와 +15.53%, 납 사용 시 각각 -12.36%와 +19.81%였다. 전자수의 경우 차폐를 하지 않았을 경우 각각 -3.92%와 +4.55%, 알루미늄 사용 시 각각 +0.59%와 +6.87%, 구리 사용 시 각각 -1.59%와 +3.86%, 납 사용 시 각각 -5.15%와 +4.00%였다. 결 론: 본 연구로 조사야 증가함에 따른 차폐물 두께가 저 원자번호에서 감소하며, 고 원자번호에서는 증가함을 볼 수 있었으며, 계산을 통해 저 원자번호물질에서는 저지방사선, 고 원자번호물질에서는 산란전자가 영향을 주는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.100-101
• /
• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.