• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.305-305
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• 2010

It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.198-198
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• 2012

Graphene has been the subject of intense study in recent years owing to its good optoelectronic properties, possibility for stretchable electronics, and so on. Especially, many research groups have studied about graphene nanostructures with various sizes and shapes. Graphene needs to be fabricated into useful devices with controllable electrical properties for its successful device applications. However, this been far from satisfaction owing to a lack of reliable pattern transfer techniques. Photolithography, nanowire etching, and electron beam lithography methods are commonly used for construction of graphene patterns, but those techniques have limitations for getting controllable GNRs. We have developed a novel nanoscale pattern transfer technique based on an electro-hydrodynamic lithography providing highly scalable versatile pattern transfer technique viable for industrial applications. This technique was exploited to fabricate nanoscale patterned graphene structures in a predetermined shape on a substrate. FE-SEM, AFM, and Raman microscopy were used to characterize the patterned graphene structures. This technique may present a very reliable high resolution pattern transfer technique suitable for graphene device applications and can be extended to other inorganic materials.

• Journal of Advanced Marine Engineering and Technology
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• 제36권8호
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• pp.1076-1082
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• 2012

오늘날 LNG선의 용접에는 아크와 플라즈마가 사용되고 있으나 아크용접은 에너지 밀도가 낮아 후판에 대해서 다층용접이 불가피하며, 고밀도 열원인 레이저 용접에 비하여 용접속도에도 한계가 있다. 따라서 후판 용접시 다층용접에 의한 용접부의 조직적 결함이나 과대 입열로 형성된 열영향부 등의 문제를 해소하기 위하여 키홀용접에 의한 원패스 용접이 고려되고 있다. 키홀용접이 가능한 열원은 레이저, 전자빔, 플라즈마가 있으며, 현재 플라즈마 용접이 아크를 대체하여 LNG선 카고탱크의 멤브레인 용접에 적용되고 있다. 최근에는 멤브레인의 용접에 레이저를 적용하기 위한 많은 연구가 진행 중에 있다. 본 연구에서는 LNG선용 스테인리스강에 대한 파이버 레이저 및 플라즈마 아크 용접의 용접성, 기계적 성질 및 미세조직을 비교하였다. 그 결과 레이저 용접이 더 빠른 용접속도에서 좁은 용접부와 열영향부를 얻을 수 있었다. 따라서 LNG선의 용접에서는 파이버 레이저가 보다 우수한 용접법이라는 것을 알 수 있었다.

• 한국재료학회지
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• 제22권4호
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• Nuclear Engineering and Technology
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• 제53권4호
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• pp.1289-1296
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• 2021

In this study, an electron-scattering device was fabricated to practically use the ultra-high dose rate electron beams for the FLASH preclinical research in Dongnam Institute of Radiological and Medical Sciences. The Dongnam Institute of Radiological and Medical Sciences has been involved in the investigation of linear accelerators for preclinical research and has recently implemented FLASH electron beams. To determine the geometry of the scattering device for the FLASH preclinical research with a 6-MeV linear accelerator, the Monte Carlo N-particle transport code was exploited. By employing the fabricated scattering device, the off-axis and depth dose distributions were measured with radiochromic films. The generated mean energy of electron beams via the scattering device was 4.3 MeV, and the symmetry and flatness of the off-axis dose distribution were 0.11% and 2.33%, respectively. Finally, the doses per pulse were obtained as a function of the source to surface distance (SSD); the measured dose per pulse varied from 4.0 to 0.2 Gy/pulse at an SSD range of 20-90 cm. At an SSD of 30 cm with a 100-Hz repetition rate, the dose rate was 180 Gy/s, which is sufficient for the preclinical FLASH studies.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 2004년도 추계 학술발표회 논문집
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• pp.133-138
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• 2004

Proton exchange membrane fuel cell (PEMFC) is considered as a clean and efficient energy conversion det ice for mobile and stationary applications. Anions all the components of the PEMFC, the interface between the electrolyte ,and electrode catalyst plays an important role in determining tile cell performance since the electrochemical reactions take place at the interface in contact with tile reactant gases. Therefore, to increase the interface area and obtain a high-performance PEMFC, surface of the electrolyte membrane was roughened by Ar$^{+}$ beam bombardment. The results imply that by modifying surface of the electrolyte membrane, platinum loading can be reduced significantly without performance loss. To optimize the surface treatment condition, effects of ion dose density on characteristics of the membrane/electrode interface were examined by measuring the cell performance, impedance spectroscopy, and cyclic voltammograms. Surface of the modified membranes were characterized using scanning electron microscopy and FT-IR.R.

• 열처리공학회지
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• 제21권5호
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• pp.235-243
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• 2008

Ni-C composite films were prepared using a combination of microwave plasma CVD and ion beam sputtering deposition working in a codeposition way. The structure of these films was characterized by energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, $Ni_3C$ (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low $CH_4$ flow rates. The thermal stability of this nonequilibrium carbide $Ni_3C$ was also studied. As a result, the $Ni_3C$ carbide was found to decompose into nickel and graphite at around $400^{\circ}C$. With high $CH_4$ flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.628-631
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• 2002

$Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

• Applied Microscopy
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• 제36권spc1호
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• pp.57-61
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• 2006

High-resolution microscopy was applied for surveying hydride stability in Vanadium alloys, which are candidate for hydrogen storage materials of advanced hydrogen energy systems. $V_2H$ hydride in V alloys was stable at room temperature under the vacuum condition, but it was decomposed during heating up to $100^{\circ}C$. It was confirmed from HRTEM image and FFT that $V_2H$ has a BCT structure, where hydrogen atoms locate at octahedral sites. Crystal orientation was <110> beta// <110> mat., and lattice strain is about 10%. After the decomposition of the hydride, relatively large lattice expansion was observed in the matrix, which suggests that hydrogen atoms should be trapped by lattice defects and included in the matrix. Intensive electron beam also enhanced the decomposition.

• 한국재료학회지
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• 제17권10호
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.