• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.105.1-105.1
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• 2009

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.95-95
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• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.298-302
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• 2023

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·cm², resulting in the highest Baliga's figure-of-merit (BFOM) of 92.0 MW/cm². We also investigated the effect of dielectric thickness and field plate length on BV.

• Journal of the Korean Chemical Society
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• v.26 no.4
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• pp.229-234
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• 1982

Using solution technique, sulfur in the sulfide ore was indirectly determined by X-ray fluorescence spectrometry. The sample was dissolved with the mixed solution of B$r_2$ and HN$O_3$, and Si$O_2$, a major constituent, was repelled from the solution by HF treatment several times, B$a^{2+}$ solution was added to the solution to precipitate the S$O^4_{2-}$ ion as BaS$O_4$. Measuring the fluorescent X-ray intensity of excess Ba2+ ion in the filtrate, the content of sulfur in the original ore was back-calculated. Comparing the results by this method with the gravimetric method, the mean difference was ${\pm}1.7%$ in the range of 20 to 40% of sulfur content and the method was tolerably reproducible.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.148-152
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• 2005

A novel interferometric isolator has been proposed and designed to fabrticate waveguide magnetooptic isolator operating at a wavelength of $1.55{\cal}um$. The device consists of MMI (multimode interference) couplers and has a magnetooptic guiding layer with different layer structure in arms of the inteferometer. The layer structures in the arms of inteferometer are $HfO_2/CeY_2Fe_5O_{12}/NOG$ and $SiO_2/CeY_2Fe_5O_{12}/NOG$, respectively. This configuration give rise to different nonreciprocal phase shift. In consequence, the isolator operates under a unidirectional magnetic field. The optimized structure of the isolator was determined by a 3D beam propagation method.

• Economic and Environmental Geology
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• v.42 no.3
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• pp.195-206
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• 2009

We investigated natural background and enrichment characteristics and predicted geochemical disaster for stream sediments in the Hamyang-Sancheong area. Stream sediments samples were collected 95 ea in study area. The stream sediments were well known that had not possibility of contamination effect and represented drainage basins. We got the major and hazardous elements concentrations by XRF, ICP-AES and NAA analysis methods. Acid decomposition for the ICP-AES has been used $HClO_4$ and HF with $200^{\circ}C$ heating at 1st and after that $HClO_4$ HF and HCl with $200^{\circ}C$ heating at 2nd stage. We could know the characteristics that concentration of Cu and Co decreased when concentration of $SiO_2$ increased in correlation analysis. The enrichment factor of the stream sediments was below 2 in study area. This result indicated that study area belonged to moderate enrichment. The stream sediments of Hamyang area were enriched in order of Pb>Th>Cr>V>Co>Cu and those of Sancheong area were enriched in order of Pb>Th>Cr>Co>V>Cu. The enrichment factor(E.F.) of the Pb, Cr, Co and V was similar between Hamyang and Sancheong area. The enrichment factor of the Th was higher in Hamyang area and that of the Cu was higher in Sancheong area. The enrichment factor of the Pb was highly enriched in all study area than earth crust mean. But we could know that study area was not exposed to the pollution of the Pb through the tolerable level.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• Journal of the Korean Chemical Society
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• v.26 no.5
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• pp.320-325
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• 1982

Utilyzing the solution prepared for the sulfur determination, the amounts of iron, copper and cobalt in the sulfide ore were determined by X-ray fluorescence spectrometry. The samples were dissolved with the mixed solutions of ,$Br_2\;and\;HNO_3$ and a major constituent of $SiO_2$was repelled from the solution by HF treatment several times. The analytical results agreed with the data obtained by conventional methods within ${\pm}$1.5% for Fe of the range of 20 to 50%, ${\pm}$1.0% for Cu of 10 to 15%, and ${\pm}$0.4% for Co of 1 to 5%. The present method was tolerably found to be reproducible.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.198-202
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• 2002

$HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.