• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.129-129
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• 2011

ISFET (ion sensitive field effect transistor)는 용액 중의 각종 이온 농도를 측정하는 반도체 이온 센서이다. ISFET는 작은 소자 크기, 견고한 구조, 즉각적인 반응속도, 기존의 CMOS공정과 호환이 가능하다는 장점이 있다. ISFET의 기본 구조는 기존의 MOSFET (metal oxide semiconductor field effect transistor)에서 고안되었으며, ISFET는 기존의 MOSFET의 게이트 전극 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다. ISFET소자의 pH 감지 메커니즘은 감지막의 표면에서 pH용액 속의 이온들이 감지막의 표면에서 속박되어 막의 표면전위의 변화를 유발하는 것을 이용한다. 그 결과, ISFET의 문턱전압의 변화를 일으키게 되고 드레인 전류의 양 또한 달라지게 된다. ISFET의 높은 pH감지능력을 얻기 위하여 높은 high-k물질 들이 감지막으로서 연구되었다. Al2O3와 HfO2는 높은 유전상수, non-ideal 효과에 대한 immunity 그리고 높은 pH 감지능력 등 많은 장점을 가지고 있는 물질로 알려졌다. 본 연구에서는, SiO2/HfO2/Al2O3 (OHA) 적층막을 이용한 EIS (electrolyte- insulator-silicon) pH센서를 제작하였다. EIS구조는 ISFET로의 적용이 용이하며 ISFET보다 제작 방법과 소자 구조가 간단하다는 장점이 있다. HfO2은 22~25의 높은 유전상수를 가지며 높은 pH 감지능력으로 인하여 감지막으로서 많은 연구가 이루어지고 있는 물질이다. 하지만 HfO2의 물질이 가진 고유의 특성상 화학적 용액에 대한 non-ideal 효과는 다른 금속계열 산화막에 비하여 취약한 모습을 보인다. 반면에 Al2O3의 유전상수는 HfO2보다 작지만 화학용액으로 인한 손상에 대하여 강한 immunity가 있는 재료이다. 이러한 물질들의 성질을 고려하여 OHA의 새로운 감지막의 적층구조를 생각하였다. 먼저 Si과 high-k물질의 양호한 계면상태를 이루기 위하여 5 nm의 얇은 SiO2막을 완충막으로서 성장시켰다. 다음으로 높은 유전상수를 가지고 있는 8 nm의 HfO2을 증착시킴으로서 소자의 물리적 손상에 대한 안정성을 향상시켰다. 최종적으로 화학용액과 직접적인 접촉이 되는 부분은 non-ideal 효과에 강한 Al2O3을 적층하여 소자의 화학적 손상에 문제점을 개선시켰다. 결론적으로 감지막의 적층 모델링을 통하여 각각의 high-k 물질이 가진 고유의 특성에 대한 한계점을 극복함으로써 높은 pH 감지능력뿐만 아니라 신뢰성 있는 pH 센서가 제작 되었다.

• The Korea Journal of Herbology
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• v.28 no.5
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• pp.61-68
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• 2013

Objectives : Hibisci Flos has long been used for inflammatory diseases in traditional Korean medicine. However, little scientific investigation has been carried out. The aim of the present study is to investigate the effect of Hibisci Flos water extract (HF) on inflammatory cytokines production in Raw 264.7 cells stimulated by lipopolysaccaride (LPS). Method : HF was prepared by extracting with boiling water for 2 hours. We observed the cell viability of mouse macrophage Raw 264.7, the production of nitric oxide (NO) and the inflammatory cytokines such as interleukin (IL)-4, IL-5, IL-10, IL-15, tumor necrosis factor-${\alpha}$ (TNF-${\alpha}$), interferon-gamma (IFN-${\gamma}$), vascular endothelial growth factor (VEGF), granulocyte macrophage-colony stimulating factor (GM-CSF), and macrophage colony-stimulating factor (M-CSF) in Raw 264.7 cells stimulated by LPS. Result : The MTT assay was carried out to check the cellular toxicity of HF. No significant toxicity was observed in the experiment. HF significantly inhibited the increase of NO in the macrophages induced by LPS after 24 hour treatment. HF significantly inhibited the production of IL-4, IL-5, IL-10, IL-15, TNF-${\alpha}$, IFN-${\gamma}$, VEGF, GM-CSF and M-CSF in the Raw 264.7 cells induced by LPS in the concentration of $25{\mu}g/mL$ or higher. Conclusion : These results suggest that HF might have regulatory effects on LPS-induced inflammatory cytokine production, which might explain its beneficial effect in the treatment of inflammatory disease.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.167-170
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• 2021

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO₂, Al₂O₃, and Ta₂O₅ are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

• Journal of IKEEE
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• v.25 no.3
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• pp.501-505
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• 2021

In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with gate dielectrics of HfO₂ and the mixed layers of HfO₂ and Al₂O₃, and investigated the effect of gate dielectric on electrical characteristics of a-ITGZO TFTs. When only HfO₂ was used as the gate dielectric, the mobility and subthreshold swing (SS) were 32.3 cm²/Vs and 206 mV/dec. For the a-ITGZO TFTs with gate dielectric made of HfO₂ and Al₂O (2:1, 1:1), the mobilities and SS were 26.4 cm²/Vs (2:1), 16.8 cm²/Vs(1:1), 160 mV/dec (2:1) and 173 mV/dec (1:1). On the other hand, the hysteresis window shown in transfer curves of the a-ITGZO TFTs was lessened from 0.60 to 0.09 V by the increase of Al₂O₃ ratio in gate dielectric, indicating that the interface trap density between the gate dielectric and channel layer decreases due to Al₂O₃.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Applied Microscopy
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• v.25 no.1
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• pp.130-138
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• 1995

TEM specimen preparation methods have been examined to characterize Cu oxide particles in the polyimide film. Polyimide films were prepared by coating polyamic acid onto Cu films which had been deposited on TEM-mask and glass substrates and Cu foil, followed by thermal curing. In case of TEM-mask, direct observation was possible without further preparation. In other cases, TEM specimen were made by separating polyimide film from the substrate. Polyimide films were removed from glass and Cu foil by dissolving glass in HF solution and Cu foil in $H_{2}SO_{4}$ solution. TEM-mask observation confirms that fine $Cu_{2}O$ particles precipitate in the polyimide as a result of reaction of polyamic acid with Cu. However $Cu_{2}O$ particle reacts with HF and $H_{2}SO_{4}$ solution during dissolving the substrate and interpretation could be misled. It is concluded characterization of $Cu_{2}O$ particle in polyimide using TEM-mask is better than other methods.

• Journal of Nutrition and Health
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• v.55 no.2
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• pp.227-239
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• 2022

Purpose: This study investigated the effects of water-soluble mulberry leaf extract (ME) on hepatic lipid accumulation in high-fat diet-fed rats via the regulation of hepatic microRNA (miR)-221/222 and inflammation. Methods: Male Sprague-Dawley rats (4 weeks old) were randomly divided into 3 groups (n = 7 each) and fed with 10 kcal% low-fat diet (LF), 45 kcal% high-fat diet (HF), or HF + 0.8% ME for 14 weeks. Lipid profiles and cytokine levels of the liver and serum were measured using commercial enzymatic colorimetric and enzyme-linked immunosorbent assay, respectively. The messenger RNA (mRNA) and miR levels in liver tissue were assayed by real-time quantitative reverse-transcription polymerase chain reaction. Results: Supplementation of ME reduces body weight and improves the liver and serum lipid profiles as compared to the HF group. The mRNA levels of hepatic peroxisome proliferator-activated receptor-gamma, sterol regulatory element binding protein-1c, fatty acid synthase, and fatty acid translocase, which are genes involved in lipid metabolism, were significantly downregulated in the ME group compared to the HF group. In contrast, the mRNA level of hepatic carnitine palmitoyl transferase-1 (involved in fatty acid oxidation) was upregulated by ME supplementation. Furthermore, administration of ME significantly downregulated the mRNA levels of inflammatory mediators such as hepatic tumor necrosis factor alpha (TNF-α), interleukin 6 (IL-6), monocyte chemoattractant protein-1, and inducible nitric oxide synthase. The serum levels of TNF-α, IL-6, and nitric oxide were also significantly reduced in ME group compared to the HF group. Expression of hepatic miR-221 and miR-222, which increase in the inflammatory state of the liver, were also significantly inhibited in the ME group compared to the HF group. Conclusion: These results indicate that ME has the potential to improve hepatic lipid accumulation in high-fat diet-fed rats via modulation of inflammatory mediators and hepatic miR-221/222 expressions.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.333-336
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• 2012

The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride ($Si_3N_4$) ceramics has been carried out in recent years. However, the density and the strength of $Si_3N_4$ ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent $Si_3N_4$ from densification and there is a possibility that CNTs react with $Si_3N_4$ or $SiO_2$. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, $HfO_2$ and $TiO_2$ was added to $Si_3N_4-Y_2O_3-Al_2O_3$-AlN system to fabricate CNT-dispersed $Si_3N_4$ ceramics at lower temperatures. $HfO_2$ promotes the densification of $Si_3N_4$ and prevents CNT from disappearance. As a result, the sample by adding $HfO_2$ and $TiO_2$ fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.