• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.215-215
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• 2003

현재 이용되고 있는 위상 변위 마스크, 즉 Cr 계열의 마스크나 MoSiON 마스크는 DUV지역에서 낮은 굴절률을 갖는다. 그 겯과 마스크의 두께가 90 nm 이상이 되고, 웨이퍼에서 패턴 형성 시 에러율이 증가하게 된다. 본 연구에서는 DUV 지역에서 굴절률이 높을 것이라고 예상되는 Zr과 Hf의 oxide를 위상 변위 마스크 물질의 선정하고 각 물질의 전자 상태와 천이 상태를 분석하여 위상변위 마스크로써의 이용가능성을 연구하자 한다. 상온에서 Zr, Hf oxide의 안정한 구조는 cubic 구조와 monoclinic 구조이다. 현재 cubic 구조의 Zr, Hf oxide에 대한 전자 상태는 연구가 많이 되어 있는 반면 monoclinic 구조에서의 전자상태 연구는 미흡하다. 본 연구에서는 monoclinic 구조를 이용하여 Zr, Hf oxide의 클러스터 모델을 제작하였다. 제작된 클러스터 모델에 대하여 DV-X$\alpha$ 계산법을 적용, 기저상태의 전자상태를 계산하였다. 그리고 각 모델에서 Zr L-edge, Hf L-edge 그리고 O K-edge의 천이상태를 연구하여, 기저 상태의 전자상태와 천이상태를 연구하여 광학 성질과의 연관성을 연구하고자 하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.687-692
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• 2011

Hafnium oxide ($HfO_2$) was very advantageous for substitute material of gate on existing transistor. $HfO_2$ has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, $HfO_2$ and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of $HfO_2$ and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of $HfO_2$ was higher than thermal oxide due to $H^+$, $F^-$, and $HF_2^-$ ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.921-926
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• 1994

The characteristics of gate oxide significantly depend on the last chemical solution used in cleaning process. The standard RCA, HF-last, SC1-last, and HF-only processes are the pre-gate oxide cleaning processes utilized in this experiment. Cleaning process was followed by thermal oxidation in oxidation furnace at $900^{\circ}C$. A 100$\AA$ gate oxide was grown and characterized with using lifetime detector, VPD AAS, SIMS, TEM, and AFM. The results of HF-last and HF-only were shown to be very effective to remove the metallic impurities. And these two splits also showed long minority carrier lifetimes. The surface and interface morphologies of the oxide were examined with AFM and TEM. The rough surface morphologies were observed with the cleaning splits containing the SC1 solution. The smooth surface and interface was observed with the HF-only cleaning process.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.895-901
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• 2023

Oxide-dispersion- strengthened nickel alloys with Hf additions are expected to present high temperature mechanical properties and durable helium resistance based on first-principles density functional theory (DFT) calculations. Energetic and charge density evaluations of the helium behaviors were performed in Ni matrix, Y₂Hf₂O₇ oxide and the oxide/matrix interface. With the presence of coherent Y₂Hf₂O₇ in Ni matrix, chances of helium bubbles in Ni can be greatly diminished. The helium atoms shall occupy the interfacial site initially, then diffuse into in the octahedral sites of Y₂Hf₂O₇, and these oxide-captured He atoms prefer to separate individually. Much higher diffusion barrier of He in Y₂Hf₂O₇ than in nickel is related to the strong hybridization between interstitial He-1s and nearest-neighboring O-2p orbitals.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.1-318.1
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• 2016

Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using $HfOCl2{\cdot}8H2O$ dissolve in 2-Methoxy ethanol was prepared at 0.3M. The HfOx layers were deposited on p-type silicon substrate by spin-coating at $250^{\circ}C$ for 5 minutes on a hot plate and repeated the same cycle for 5 times, followed by annealing process at 350, 450 and $550^{\circ}C$ for 2 hours. When the annealing temperature was increased from 350 to $550^{\circ}C$, capacitance value was increased from 337 to 367 pF. That was resulted from the higher temperature of HfOx which have more crystallization phase, therefore dielectric constant (k) was increased from 11 to 12. It leads to the formation of dense HfOx film and improve the ability of the insulator layer. We confirm that HfOx layer have a good performance for dielectric layer in MOS capacitors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.237-242
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• 1997

The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at $P_{O2}=10%$ by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, is investigated. Newly developed $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits good soft magnetic properties with $4{\pi}M_s=17.7$ kG, $H_c=0.7$ Oe and ${\mu}_{eff}$(0.5~100MHz)=2,500, respectively. The Fe-Hf-O films are composed of $\alpha$-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally. It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf. It results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity. The $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits the quality factor (Q=$\mu$'/$\mu$") of 25 at 20 MHz. These good frequency characteristics are considered to be superior to other films already reported.o other films already reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.2-304.2
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• 2016

Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.13-17
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• 2004

We have investigated the effect of Hf insertion in the Al oxide tunnel barrier on the properties of magnetic tunnel junctions (MTJs). MTJs with Hf inserted barrier show the higher tunnel magnetoresistance (TMR) ratio and less temperature and bias voltage dependence of TMR than MTJs with a conventional Al$_2$O$_3$ barrier. The enhancement of TMR ratio and the reduction of the temperature and bias voltage dependence might be due to the reduction of defects in the barrier. Al-Hf oxide was formed by depositing Al and Hf simultaneously, and oxidizing the compound films. The TMR ratio of 36% was almost the same value as that with Hf inserted barrier. This implies that the inserted Hf layers mixed with Al layers during deposition or oxidation, and they might form Al Hf oxide barriers. This compound Al Hf oxide formation may be responsible to reduction of defect concentration which enhanced the TMR ratio and reduced temperature and bias-voltage dependence.