• Transactions of the Korean hydrogen and new energy society
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• v.34 no.6
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• pp.734-740
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• 2023

Hydrogen emphasis on safety management due to its high potential for accidents from wide explosive limits and low ignition energy. To prevent accidents, appropriate explosion-proof electrical equipment with installed to safe management of ignition sources. However, designing all facilities with explosion-proof structures can significantly increase costs and impose limitations. In this study, we optimize the barrier to effectively control the initial momentum in case of hydrogen release and form the control room as a non-hazardous area. We employed response surface method (RSM), the barrier distance, width and height of the barrier were set as variables. The Box-Behnken design method the selection of 15 cases, and FLACS assessed the presence of hazardous area. Analysis of variance (ANOVA) analysis resulting in an optimized barrier area. Through this methodology, the workplace can optimize the barrier according to the actual workplace conditions and classify reasonable hazardous area, which is believed to secure safety in hydrogen facilities and minimize economic burden.

• Applied Chemistry for Engineering
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• v.10 no.8
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• pp.1114-1118
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• 1999

Barrier rib for the plasma display panel(PDP) was made by photolithographic process utilizing photosensitive barrier rib paste. The barrier rib paste was prepared by first dissolving ethylcellulose(binder polymer) in butyl carbitol(BC)/butyl carbitol acetate(BCA) =30/70 wt % mixture solvent at 15 wt % concentration. To this solution a mixture of functional monomers consisted of tripropyleneglycol diacrylate/ pentaerythritol triacrylate = 50/50 wt %, Irgacur 651 photoinitiator, and barrier rib powder were added and then the whole mixture was mixed in the three roll mill for 2 hr. The effect of component and concentration of photosensitive barrier paste on the photolithographic process was studied. After optimization of the paste formulation and photolithographic process, barrier rib could be obtained with good resolution up to $100{\mu}m$ height.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2008.04a
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• pp.496-499
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• 2008

The noise reducing devices installed on the noise barrier have been developed in many shapes and ways to reduce noise around road traffic areas. In this study, test and estimation method for the noise reducing device witch installed on the top of a noise barrier was suggested. For this, the authors have considered sound power flow around the device and sound pressure levels for the far field area. To estimate the area effect behind the barrier, area average of noise pressure level difference divided by two area, upper and bellow the sight-line. Comparing the attenuation difference of these areas, the tendency of noise reduction effect was studied according to type of noise reducing devices. Compared with noise shielding efficiency of the devices that using equivalent height of a simple barrier calculated by the SoundPlan, the commercial environment noise simulation software.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11b
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• pp.767-770
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• 2002

Reduction of the propagation noise generated during pass-by of KTX by noise barrier was measured and analysed for the two kinds of top-shaped noise reduction devices; one as a plywood board and the other as a PVC pipe were placed periodically. The height and length of reference noise barrier are 2.4 m and 50 m, respectively. The noise reduction with and without noise reduction devices was investigated.

• Proceedings of the KOR-KST Conference
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• 2007.02a
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• pp.325-333
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.41-47
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• 2015

In this paper, the effective electron Schottky barrier height (${\Phi}_{Bn}$) of the Ni silicide/n-silicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ${\Phi}_{Bn}$ is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ${\Phi}_{Bn}$ of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.241-245
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• 2022

In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

• Asian Journal of Atmospheric Environment
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• v.10 no.3
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• pp.125-136
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• 2016

In this study, the effects of the mesh barrier on the free dispersion of ammonia were numerically investigated under different atmospheric conditions. This study presents the detail and flow feature of the dispersion of ammonia through the mesh barrier on various free stream conditions to decline and limit the toxic danger of the ammonia. It is assumed that the dispersion of the ammonia occurred through the leakage in the pipeline. Parametric studies were conducted on the performance of the mesh barrier by using the Reynolds-averaged Navier-Stokes equations with realizable k-${\varepsilon}$ turbulence model. Numerical simulations of ammonia dispersion in the presence of mesh barrier revealed significant results in a fully turbulent free stream condition. The results clearly show that the flow behavior was found to be a direct result of mesh size and ammonia dispersion is highly influenced by these changes in flow patterns in downstream. In fact, the flow regime becomes laminar as flow passes through mesh barrier. According to the results, the mesh barrier decreased the maximum concentration of the ammonia gas and limited the risk zone (more than 500 ppm) lower than 2 m height. Furthermore, a significant reduction occurs in the slope of the upper boundary of $NH_3$ risk zone distribution at downstream when a mesh barrier is presented. Thus, this device highly restricts the leak distribution of ammonia in the industrial plan.