• 한국진공학회지
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• 제8권2호
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• pp.111-115
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• 1999

The structural characteristics of an epitaxial $BaTiO_3$ film on MgO(001) grown by sputtering were studied as a function of temperature using in-situ, real time synchrotron x-ray scattering experiments. We found that the as-grown film was single c-domain but strained at room temperature and tetragonally distorted with the c-axis normal to the film surface. Interestingly, its lattice parameters were found to be expanded in both the in-plane and the out-of -plane directions, i.e. biaxially, comparing with those of a bulk $BaTiO_3$ . More importantly, as it was heated up to $600^{\circ}C$, the tetragonal structure was kept up through without and any phase transition, which is usually observed in other epitaxial ferroelectric thin films.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1072-1076
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. FTS system has two different facing targets. One is ZnO doped the content of Al 2 wt% and the other is Zn in order to decrease resistivity. The electrical, structural and optical properties of AZO thin films were investigated. To evaluate the as-deposited thin film properties, we employed four-point probe (CMT-R100nw, Changmin), Surface profiler (Alpha-step, Tencor), UV/VIS spectrometer (HP), X-ray diffractometer (XRD, Rigaku) and Field Emission Scanning Electron Microscopy (FESEM, Hitachi S-4700). As a result, We obtained that AZO thin film deposited on PES substrate at a DC Power of 150 W, working pressure of 1 mTorr and $O_2$ gas flow ratio of 0.2 exhibited the resistivity of $4.2{\times}10^{-4}\;[{\Omega}cm]$ and the optical transmittance of about 85 % in the visible range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.403-404
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. ZnO doped the content of Al 2 wt% was used and the sputtering conditions were gas pressure 1mTorr and input power 100W. The electrical, structural and optical properties of AZO thin films were investigated. To investigate the as-deposited thin film properties, we employed four-point probe, UV/VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

• Archives of Metallurgy and Materials
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• 제65권3호
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• pp.1011-1014
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• 2020

Ice formed on radome surfaces causes communication disruption due to radio-frequency interference (RFI), which reveals the importance of de-icing systems for radomes. As a radome de-icing application, in this work, carbon nanotube (CNT) thin films were fabricated using a spray-coating method, and influence of process parameters on RF transmittance and electrothermal properties was investigated. With the increase of spraying time, sheet resistance of the fabricated film decreases, which results in a decrease of the RF transmittance and improvement of the heating performance. Also, the de-icing capability of the fabricated CNT film was evaluated at -20℃, and efficient removal of ice under cold conditions was demonstrated.

• Journal of Biosystems Engineering
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• 제16권4호
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• pp.399-407
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• 1991

In Korea, the cultivation area under the plastic greenhouse was 1,746 ha in 1975, and 36,656 ha in 1989, it shows that the greenhouse cultivation area was increased by 21 times during last 14 years. The greenhouse cultivation area of 90~93% has been kept warm with double layers of plastic film and thermal curtain knitted with rice straw, and the rest area of 7~10% has been heated by fossil fuel energy. The use of rice straw thermal curtain is inconvenient to put it on and off, on the other hand the use of fossil fuel heating system results in the increase of production cost. To solve these problems, at first the heating load and the storable solar energy in greenhouse during the winter season were predicted to design solar utilization system, secondly a solar thermal storage system filled with latent heat storage materials was developed in this study. And then finally the thermal performance of greenhouse-solar energy storage system was analyzed theoretically and experimentally.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1763-1766
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• 2007

Three technical obstacles must be overcome to build a fruitful business in the nascent industry of flexible microelectronics: the self-heating effect of thin film transistors (TFTs), the thermal and mechanical durability of flexible devices, and the cost issue. The self-heating effect is controlled through TFT shape, TFT electrical performance, dimensional reduction and energy-efficient circuits. Plastic engineering is one of the keys to solving thermal and mechanical durability problems faced by flexible microelectronics devices. For the Suftla flexible microelectronics business to be viable, Suftla transfer yield must be sufficiently high to keep down device cost. Improving the transfer yield is not easy, but it is the same challenge already faced and cleared in the TFT liquid crystal display industry.

• 대한기계학회논문집
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• 제16권1호
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• pp.87-94
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• 1992

본 연구에서는 실험적 해석을 통하여 액체-액체계의 직접접촉 막비등열전달 특성을 최소막비등지점과 막비등열유속의 측면에서 해석하고자 한다. 이는 직접접촉 비등에 대한 효율적인 열전달의 온도영역이나 주어진 액체-액체 계의 조합에 대한 증 기폭발의 발생가능성의 예측에 활용될 수 있을 것이다.

• 설비공학논문집
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• 제12권7호
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• pp.642-648
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• 2000

Falling film heat transfer analyses with aqueous lithium bromide solution were peformed to investigate the transfer characteristics of the copper tubes. Finned(knurled) tube and a smooth tube were selected as test specimens. Averaged generation fluxes of water and the heat transfer performances(heat flux, heat transfer coefficient) were obtained. The results of this work were compared with the data reported previously. As the film flow rate of the solution increased, the generation fluxes of water decreased for both tubes. The reason is estimated by the fact that the heat transfer resistance with the film thickness increased as the film flow rate increased. The effect of the enlarged surface area at the knurled tube was supposed to be dominant at a small flow rate. The generation fluxes of water increased with the increasing degree of tube wall superheat. Nucleate boiling is supposed to occur at a wall superheat of 20 K for a smooth tube, and at 10 K for a knurled tube. The heat transfer performance of the falling film was superior to pool boiling at a low wall superheat below 10 K for both tubes tested. The knurled tube geometry showed good performance than the smooth tube, and the increased performance was mainly came from the effect of the increased heating surface area.

• 한국표면공학회지
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• 제49권3호
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• pp.252-259
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• 2016

In order to form an aluminum-doped zinc oxide (AZO) transparent electrode film on a polyethylene terephthalate (PET) substrate used for a flexible display substrate, the AZO transparent electrode was produced at low temperature without substrate heating. Even though the produced electrode showed characteristic optical transmittance of 90 % (at 550 nm) and sheet resistance within $100{\Omega}/sq$, cracks occurred 10 minutes after loading applied 2 mm radius of curvature, and the sheet resistance increased linearly. An insertion layer of ZrCu was formed between the AZO film and the PET substrate to suppress the generation of cracks on the AZO film. It was verified that the crack was not generated 30 minutes after the loading of 2 mm radius of curvature, and no increase in sheet resistance was recorded. There was also not cracks in the dynamic bending test of 4 mm radius, but surface resistance was slightly increased. As a result, the ZrCu insertion film improved the interfacial adhesion between the substrate and AZO film layer without increasing sheet resistance and decreasing transmittance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.48-48
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• 2007

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.