• 제목/요약/키워드: He plasma

검색결과 321건 처리시간 0.029초

인삼 분획성분들이 고지방식이에 의해서 유도된 비만 Rat에서 혈장, 지방조직 및 변 Steroids에 미치는 영향 (Effect of Ginseng Fraction Components on Plasma, Adipose and Feces 1 Steroids in Obese Rat Induced by a High Fat Diet)

  • 배만종;성태수;최청
    • Journal of Ginseng Research
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    • 제14권3호
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    • pp.404-415
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    • 1990
  • This study is conducted to evalute the effect of ginseng fraction component (ginseng extract solution, GES; ginseng protein, GP; ginseng saponin, GSA; ginseng residue, GR) upon hyperlipidemia and fatty liver induced by high fat administration. In doing so, the serum, liver and epididymal adpoid tissue have been examined for lipid components level and lipoprotein fraction. Feces bile acid and neutral sterol excretion have been also measured. 1'he results obtained from this study are as follows. 1. Serum, liver, epididymal lipid components of GP and GSA group were significantly lower than the controlgroup. 2. During the feeding experiment, VLDL and LDL increase while HDL decrease in all group. However the degree of VLDL and LDL increase and HDL decrease were signficantly small in GP and GSA group compared with control group. 3. In the excretion of bile acid and neutral sterol, all experiment group showed increased excretion in the comparison of control group.

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HEMT 소자 제작을 위한 GaAs/AlGaAs층의 선택적 건식식각 (Selective Dry Etching of GaAs/AlGaAs Layer for HEMT Device Fabrication)

  • 김흥락;서영석;양성주;박성호;김범만;강봉구;우종천
    • 전자공학회논문지A
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    • 제28A권11호
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    • pp.902-909
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    • 1991
  • A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

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Thin and Hermetic Packaging Process for Flat Panel Display Application

  • Kim, Young-Cho;Jeong, Jin-Wook;Lee, Duck-Jung;Choi, Won-Do;Lee, Sang-Geun;Ju, Byeong-Kwon
    • Journal of Information Display
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    • 제3권1호
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    • pp.11-16
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    • 2002
  • This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

Effects of MgO Thin Film Thickness and Deposition Rate on the Relative Life Time of ac PDP

  • Choi, Min-Seok;Lee, Young-Kwon;Ham, Myung-Soo;Choi, Joon-Young;Kim, Dong-Hyun;Lee, Ho-Jun;Park, Chung-Hoo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.778-783
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    • 2003
  • For ac Plasma Display Panel (PDP), the lifetime should be guaranteed over 30000 hours. The lifetime is correlated with the deterioration characteristics for the weakest element in ac PDP. In this paper, in order to improve the lifetime of ac PDP, a short-term relative lifetime test method for a given element in the ac PDP is proposed. By this method, the effects of MgO thin film thickness and deposition rate on the relative lifetime of ac PDP are investigated. The relative lifetime is increased with MgO thin film thickness but it was almost saturated over 5000. The relative lifetime decreased with increase in the MgO deposition rate and increased with Xe% in the working gas of He+Ne+Xe..

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Lymphocγtic Interstitial Pneumonia 1예 (A Case of Lymphocytic Interstitial Pneumonia)

  • 서요안;김상일;김대한;곽진영;이재철;백희종;정진행
    • Tuberculosis and Respiratory Diseases
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    • 제51권4호
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    • pp.390-394
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    • 2001
  • Lymphocytic interstitial pneumonia(LIP) is characterized by a massive infiltration of the interstitium of the lung by mature lymphocytes, plasma cells and reticuloendothelial cells. LIP may be associated with autoimmune diseases including Sj$\check{o}$grens syndrome, SLE, myasthenia gravis, pernicious anemia, autoimmune hemolytic anemia, and HIV or an EB virus infection. There is a possibility of LIP progressing to a pulmonary or systemic lymphoma. The therapeutic response to corticosteroids and/or immunosuppressive drugs varies. Here we report a case of LIP that was diagnosed by an open lung biopsy and clonality study. The patient was a 36 year-old man without autoimmune disease or HIV infection. He was admitted as a result of severe hypoxemia showing $PaO_2$ of 48.3mmHg. The patient was treated with corticosteroids after the diagnosis and had fully recovered without a sequalae or relapse.

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노출전극 대기압 저온 마이크로 플라즈마의 개발 및 전기광학적 특성 (Electro-optical characteristics of low temperature atmospheric pressure micro plasma using dielectric-free parallel electrodes)

  • 하창승;송인철;임왕선;김동현;이해준;이호준;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1350-1351
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    • 2008
  • 대기압 플라즈마를 발생시키는 것은 종래의 저기압 플라즈마를 발생시키는 것 보다 대단히 어렵다. 하지만, 대기압 플라즈마는 진공장치가 필요 없고, 제작방식이 비교적 간편하며 살균, 의료, 표면처리 등 다양한 응용이 가능해서 그 잠재력이 매우 크다. 본 연구에서는 유전체가 없는 두 전극사이에서 대기압 저온 마이크로 플라즈마를 발생시켰으며, submicrosecond pulse 파형으로 glow discharge를 유지할 수 있었다. 플라즈마 소스의 전극 간격은 200[${\mu}m$]이고 방전개시전압은 약 450${\sim}$600[V]이다. 플라즈마를 발생시키기 위한 feeding gas는 He 100%이다. 본 연구에서 개발된 대기압 플라즈마는 소비전력이 2[W]미만으로 온도는 조건에 따라 40$^{\circ}C$미만으로 발생 가능하다. 또한 스펙트럼 분석 시 777nm인 산소원자의 peak이 다른 원자 혹은 분자들의 peak보다 월등히 높다.

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AC-PDP의 ADS 구동방식에서 어드레스 구간에 기울기파를 사용한 효과에 관한 연구 (A Study of the Effect using Ramp Waveform on the Address Period of Address Display Separated Operating in ac Plasma Display Panel)

  • 정봉규;김지선;권시옥;황호정
    • 한국전기전자재료학회논문지
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    • 제18권2호
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    • pp.180-186
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    • 2005
  • As a driving method of AC-PDP, Address-Display Separated(ADS) driving has been widely adopted for its simple architecture and low discharge failure rate. However, a high definition like a HDTV has defect of long addressing time by reason of a number of pixels. Priming effect isn't fully sustained because of long addressing time during the address period. Therefore, it has different wall charge and luminance of each addressing time in the sustain period. In this study, we suggest a new driving waveform on the address period to improve these defects. We applied a ramp waveform, instead of a square waveform, to an address period in ADS, for operating on the AC-PDP, which used the conventional gas [He-Ne-Xe]. When the ramp waveform is applied to the address period, we experimented for uniform wall charge and the improved luminance by sustained Priming effect at each addressing time in the sustain period.

화상 후 속발한 메티실린 내성 포도알균에 의한 독성 쇼크 증후군 1례 (A Case of Toxic Shock Syndrome Caused by Methicillin-resistant Staphylococcus aureus(MRSA) Following a Burn Injury)

  • 최진형;최재홍;김대일;김재석;최은화
    • Pediatric Infection and Vaccine
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    • 제16권2호
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    • pp.205-209
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    • 2009
  • 독성 쇼크 증후군은 황색 포도알균 등에서 생성하는 독소에 의한 고열, 발진 및 쇼크에 병발하는 다발성 장기 부전이 발생하는 증후군이다. 저자들은 화상 후 속발한 독성 쇼크 증후군으로 진단한 환아를 vancomycin, 신선 냉동 혈장, 정맥내면역 글로불린 투여로 치료하고, 화상 부위에서 동정된 CAMRSA의 분자 생물학 및 유전적 특징을 분석하여 이를 보고하는 바이다.

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ECR Microwave 중성입자빔을 이용한 Si 양자점 형성 및 특성분석

  • 박종배;오경숙;김대철;김종식;김영우;윤정식;유석재;이봉주;선호정
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.397-397
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    • 2011
  • 최근 태양전지 연구가 활발히 진행되는 가운데 저가 고효율 태양전지로 제안되는 제3세대 태양전지로 Quantum Dots (QD: 양자점) 태양전지에 대한 연구가 많은 연구자들에 의해 관심이 모아지고 있다. 현재까지 보고된 최고효율은 NSWU의 13%의 효율을 보고하고 있으며, 국내에서도 다양한 분야에서 연구가 진행되고 있다. 본 연구에서는 기존의 PECVD에서 문제시 되고 있는 플라즈마에 의한 박막손상과 고온 증착온도 등의 단점을 보완한 증착 기술로 중성입자빔 (Hyper-thermal neutral beam ; HNB)을 이용한 저온 증착방법에 대한 연구를 진행하였다. 유리기판과 p-type Si 기판 그리고 SiNx 박막 위에 Ar, He, H2, 그리고 SiH4 가스를 소스 가스로 활용하여 ECR-microwave 플라즈마에서 생성된 중서입자빔을 이용한 Si 양자점을 형성하였고, Si 양자점 형성 특성과 크기제어 방법에 대한 연구를 진행하였다. 또한 TEM, FTIR, Raman, Photo Luminescence 등의 분석 방법을 이용하여 결정성 및 성분 등을 분석하여 HNB의 특성 및 효과를 규명하였다.

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PECVD에 의한 비정질 불화탄소막의 증착 및 특성분석 (Deposition and Analysis of Fluorinated Amorphous Carbon Thin Films by PECVD)

  • 김호운;신장규;권대혁;서화일
    • 센서학회지
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    • 제13권3호
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    • pp.182-187
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    • 2004
  • The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.