• Title/Summary/Keyword: He plasma

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A study of the fluorine treatment for the anti-corrosion after plasma etching of AlCu films (AlCu 배선의 부식방지를 위한 fluorine 가스 처리연구)

  • 김창일;서용진;권광호;김태형;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.383-386
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    • 1998
  • After etching Al-Cu alloy films using SiC1$_4$/Cl$_2$/He/CHF$_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, CHF$_3$ plasma treatment subsequent to the etched has been carried out. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after CHF$_3$ and SF$_{6}$ treatment, and the layer supresses effectively the corrosion on the surface as the CHF$_3$ and SF$_{6}$ treatment pressure increases. The corrosion could be suppressed successfully with CHF$_3$ and SF6 treatment in the pressure of 300mTorr.orr.

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Measurement of excited species in discharges using Laser Absorption spectroscopy

  • Sakai, Yosuke
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.5-8
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    • 2000
  • The population density of excited species in dc, rf and laser ablation plume plasmas has been measured using laser absorption spectroscopy. It was shown that, when the plasma was modulated by on and off with, the sensitivity and signal to noise (S/N) ratio became high. For example, the atomic O(3$^{5}$ S$^{o}$ $_2$) Population density, No* in $O_2$/He mixtures was obtained by the highest S/N ratio at a frequency of 2.7kHz. In a 20Torr room air, the lowest No* level to be detectable was shown to be an order of 10$^{7}$ cm$^{-3}$ . The population densities of resonance Ar(1S$_2$) and Xe(1S$_4$) levels were also measured in barrier discharges and laser ablation plasmas.

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Hemolytic Crisis Recovered by Exchange Transfusion in a Child with Fulminant Wilson's Disease (용혈위기를 동반한 윌슨병에서 교환 수혈로 회복된 소아 1예)

  • Choi, Hee-Joung;Lim, Hae-Ri;Choe, Byung-Ho
    • Pediatric Gastroenterology, Hepatology & Nutrition
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    • v.9 no.1
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    • pp.108-113
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    • 2006
  • In case of Wilson's disease complicated with hemolytic anemia and fulminant hepatic failure; plasma exchange or liver transplantation should be considered. We report an 11 year-old male with fulminant Wilson's disease who developed hemolytic crisis. He was recovered by exchange transfusion after 6 times of plasma exchange.

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A Rare Case of Hyponatremia Caused by Reset Osmostat in a Neonate with Cleft Lip, Cleft Palate, and Imperforate Anus

  • Ahn, Jung Gu;Lee, Jeong Eun;Chung, Woo Yeong;Koo, Soo Hyun;Shin, Jaeho;Jeon, Ga Won
    • Neonatal Medicine
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    • v.25 no.3
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    • pp.131-135
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    • 2018
  • Hyponatremia is defined as a plasma sodium concentration of <135 mEq/L. It is a common electrolyte imbalance in newborns. We report the case of a term neonate with cleft lip, cleft palate, imperforate anus, normal male karyotype, and chronic hyponatremia. On the 4th day of life, he showed hyponatremia (plasma sodium concentration 130 mEq/L) with low serum osmolality (275 mOsm/kg), high urine sodium (116.7 mEq/L), and high urine osmolality (412 mOsm/kg). His thyroid and adrenal functions were normal. Despite intravenous and oral sodium supplementation and hydrocortisone treatment, hyponatremia persisted. Brain magnetic resonance imaging showed normal results. He was diagnosed as having reset osmostat, a rare subtype of the syndrome of inappropriate secretion of antidiuretic hormone characterized by a subnormal threshold for antidiuretic hormone secretion, with hypotonic hyponatremia.

Effect of Hydrogen Radicals for Ion Implanted CVD Diamond Using Remote Hydrogen Plasma Treatment(RHPT)

  • Won, Jaihyung;Hatta, Akimitsu;Yagi, Hiromasa;Wang, Chunlei;Jiang, Nan;Jeon, Hyeongmin;Deguehi, Masahiro;Kitabatake, Makoto;Ito, Toshimichi;Sasaki, Takatomo;Hiraki, Akio
    • The Korean Journal of Ceramics
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    • v.4 no.1
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    • pp.15-19
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    • 1998
  • Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.

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A Case of Congenital Factor VII Deficiency Presented with Subacute Subdural Hematoma

  • Kim, Min-Kyoung;Shin, Sang-Jun;Kim, Kyung-Ok;Lee, Kyung-Hee;Hyun, Myung-Soo;Cho, Hee-Soon
    • Journal of Yeungnam Medical Science
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    • v.21 no.2
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    • pp.231-236
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    • 2004
  • A congenital factor VII deficiency is a rare disorder with an estimated incidence in the western contries of one in 500,000. Because factor VII is important in initiation the coagulation cascade, a factor VII deficiency can result in significant bleeding with prolongation of the prothrombin time. We present a case of a factor VII deficiency with a subdural hematoma in an 18-year-old boy whose plasma activity of factor VII was ${\leq}10%$. Previously, he did not have any symptoms, such as hemarthrosis, easy bruising or bleeding after a minor trauma. He was administered fresh frozen plasma and a trephination was performed. His sister also had 51% lower level of factor VII.

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Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition with $C_4$F$_8$ and $Si_2H_6/He$ for low dielectric constant intermetallic layer dielectrics

  • Kim, Howoon;Shin, Jang-Kyoo;Kwon, Dae-Hyuk;Lee, Gil S.
    • Journal of Korean Vacuum Science & Technology
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    • v.7 no.2
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    • pp.33-38
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    • 2003
  • Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with $C_4$F$_{8}$ and Si$_2$H$_{6}$/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5∼5.5∼5.

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Effects of Hydrogen Gas on the Optical Properties of Diamondlike Carbon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition (플라즈마 화학증법에 의해 형성된 Diamondlike Carbon 박막의 광학적 특성에 미치는 수소가스의 영향)

  • Kim, Han-Do;Ju, Seung-Gi
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.152-158
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    • 1994
  • Diamondlike carbon thin film have been fabricated using methane as a reactive gas by plasma enhanced chemical vapor deposition. Effects of hydrogen gas on the optical properties of the thin film has been investigated. When the hydrogen was used as a secondary gas, the role of hydrogen changed with deposition power unlike inert gases such as Ar and He. From the changes of optical band gap and FT-IR analysis, it was predicted that the chemical etching, sputtering of C-H bond by hydrogen and the implantation of hydrogen into the thin film could occur. The validity of the possibilities was confirmed by examining the effect of secondary gases such as Ar and He.

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The Characteristic Variation of Mask with Plasma Treatment (플라즈마 처리에 의한 마스크 특성 변화)

  • Kim, Jwa-Yeon;Choi, Sang-Su;Kang, Byung-Sun;Min, Dong-Soo;An, Young-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.111-117
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    • 2008
  • We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

Cold Plasma Treatment Application to Improve Microbiological Safety of Infant Milk Powder and Onion Powder (콜드 플라즈마 처리를 이용한 분유와 양파분말 살균)

  • Oh, Yeong Ji;Lee, Hanna;Kim, Jung Eun;Lee, Seok Hoon;Cho, Hyung Yong;Min, Sea Cheol
    • Korean Journal of Food Science and Technology
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    • v.47 no.4
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    • pp.486-491
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    • 2015
  • The potential of applying cold plasma (CP) treatments to improve microbiological safety of powdered products has been investigated using infant milk powder (IMP) and onion powder (OP). Among the different kinds of CP-forming gases, He-$O_2$ (99.8:0.2) gas mixture and He gas were most effective in reducing the number of Cronobacter sakazakii in IMP and Bacillus cereus spores in OP, respectively. C. sakazakii counts in IMP decreased by $0.9{\pm}0.1{\log}\;CFU/g$ after CP treatment, and the extent of C. sakazakii inhibition increased in a time-dependent manner. CP treatment at 900 W for 20 min reduced the number of B. cereus spores by ~0.4 log spores/g. Treatments that integrated CP with microwave (MW-CP treatment) as well as those that integrated CP with heat and microwave (H-MW-CP treatment) resulted in a 90% reduction in the number of spores in OP. Thus, CP treatments demonstrated potential for decontaminating foodborne pathogens from powdered products, in combination with heat for improved effect.