• 호남수학학술지
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• 제31권1호
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• pp.45-61
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• 2009

We consider finite time blowup solutions of the $L^2$-critical focusing Hartree equation on $\mathbb{R}^n$, $n{\geq}3$ below $H^1$.

• 충청수학회지
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• 제37권1호
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• pp.27-40
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• 2024

In this paper, we consider the higher-order HartreeFock equations. The higher-order linear Schrödinger equation was introduced in [5] as the formal finite Taylor expansion of the pseudorelativistic linear Schrödinger equation. In [13], the authors established global-in-time Strichartz estimates for the linear higher-order equations which hold uniformly in the speed of light c ≥ 1 and as their applications they proved the convergence of higher-order Hartree-Fock equations to the corresponding pseudo-relativistic equation on arbitrary time interval as c goes to infinity when the Taylor expansion order is odd. To achieve this, they not only showed the existence of solutions in L² space but also proved that the solutions stay bounded uniformly in c. We address the remaining question on the convergence of higherorder Hartree-Fock equations when the Taylor expansion order is even. The distinguished feature from the odd case is that the group velocity of phase function would be vanishing when the size of frequency is comparable to c. Owing to this property, the kinetic energy of solutions is not coercive and only weaker Strichartz estimates compared to the odd case were obtained in [13]. Thus, we only manage to establish the existence of local solutions in H^s space for s > $\frac{1}{3}$ on a finite time interval [-T, T], however, the time interval does not depend on c and the solutions are bounded uniformly in c. In addition, we provide the convergence result of higher-order Hartree-Fock equations to the pseudo-relativistic equation with the same convergence rate as the odd case, which holds on [-T, T].

• 대한수학회지
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• 제55권2호
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• pp.373-390
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• 2018

In this paper we study the small-data scattering of the d dimensional fractional $Schr{\ddot{o}}dinger$ equations with d = 2, 3, $L{\acute{e}}vy$ index 1 < ${\alpha}$ < 2 and Hartree type nonlinearity $F(u)={\mu}({\mid}x{\mid}^{-{\gamma}}{\ast}{\mid}u{\mid}^2)u$ with max(${\alpha}$, ${\frac{2d}{2d-1}}$) < ${\gamma}{\leq}2$, ${\gamma}$ < d. This equation is scaling-critical in ${\dot{H}}^{s_c}$, $s_c={\frac{{\gamma}-{\alpha}}{2}}$. We show that the solution scatters in $H^{s,1}$ for any s > $s_c$, where $H^{s,1}$ is a space of Sobolev type taking in angular regularity with norm defined by ${\parallel}{\varphi}{\parallel}_{H^{s,1}}={\parallel}{\varphi}{\parallel}_{H^s}+{\parallel}{\nabla}_{{\mathbb{S}}{\varphi}}{\parallel}_{H^s}$. For this purpose we use the recently developed Strichartz estimate which is $L^2$-averaged on the unit sphere ${\mathbb{S}}^{d-1}$ and utilize $U^p-V^p$ space argument.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1670-1676
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• 2014

This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.

• 한국광학회:학술대회논문집
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• 한국광학회 1995년도 광학 및 양자전자학 워크샵 논문집
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• pp.138-148
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• 1995

A reduced description of the dynamics of carriers in excited semiconductors is presented. Fristly, a time-convolutionless equation of motion for the reduced density operator is derved from the microscopic Liouville wquation operator method. Secondly, the quantum kinetic equations for intercting electron-hole parirs near band-edge in semiconductors under an extermal optical field are obtained from the equation of motion for the reduced density operator. The non-Markovian optical gain of a driven semiconductor is derived including the many-body effects. plasma screening and excitinic effects are taken into account using as effective Hamiltonian in the time-dependent Hartree-Fock approximation. it is shown that the line shape of optical-gain spectra gain is enhanced by the exicitonic effects caused by the attrative electron-hole Coulomb interaction and the interference effects (renormalized memory effects) between the extermal driving filed and the intermal driving Filed and the stochastic reservoir of the system.

• ETRI Journal
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• 제21권4호
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• pp.65-82
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• 1999

We present a calculation model for an improved quantitative theoretical analysis of electronic and optical properties of strained-piezoelectric[111] InGaAs/GaAs superlattices (SLs). The model includes a full band-coupling between the four important energy bands: conduction, heavy, light, and spin split-off valence bands. The interactions between these and higher lying bands are treated by the k ${\cdot}$ p perturbation method. The model takes into account the differences in the band and strain parameters of constituent materials of the heterostructures by transforming it into an SL potential in the larger band-gap material region. It self-consistently solves an $8{\times}8$ effective-mass $Schr{\ddot{o}}dinger$ equation and the Hartree and exchange-correlation potential equations through the variational procedure proposed recently by the present first author and applied to calculate optical matrix elements and spontaneous emission rates. The model can be used to further elucidate the recent theoretical results and experimental observations of interesting properties of this type of quantum well and SL structures, including screening of piezoelectric field and its resultant optical nonlinearities for use in optoelectronic devices.