Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)
- 1995.06a
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- Pages.138-148
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- 1995
The theory of non-Markovian optical gain in excited semiconductors
Abstract
A reduced description of the dynamics of carriers in excited semiconductors is presented. Fristly, a time-convolutionless equation of motion for the reduced density operator is derved from the microscopic Liouville wquation operator method. Secondly, the quantum kinetic equations for intercting electron-hole parirs near band-edge in semiconductors under an extermal optical field are obtained from the equation of motion for the reduced density operator. The non-Markovian optical gain of a driven semiconductor is derived including the many-body effects. plasma screening and excitinic effects are taken into account using as effective Hamiltonian in the time-dependent Hartree-Fock approximation. it is shown that the line shape of optical-gain spectra gain is enhanced by the exicitonic effects caused by the attrative electron-hole Coulomb interaction and the interference effects (renormalized memory effects) between the extermal driving filed and the intermal driving Filed and the stochastic reservoir of the system.
Keywords