• Korean Journal of Materials Research
• /
• v.14 no.1
• /
• pp.46-51
• /
• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• The korean journal of orthodontics
• /
• v.37 no.4
• /
• pp.245-259
• /
• 2007

Improvements in jaw relationship through clockwise rotation of the mandible may be desirable in some Class III patients with short low facial height. The aim of this study was to examine the treatment effect of face mask for Class III malocclusion patients according to their low facial morphology. Methods: Class III patients in their pubertal growth period were divided into two groups (Group 1, high LFH; Group 2, low LFH) according to lower facial height (LFH) by Ricketts (norm, 47). treatment changes between groups after face mask treatment was compared not only for hard tissue but also for soft tissue. Results: There were no significant differences between the two groups for the skeletal and soft tissues of the maxilla. There were no significant differences between the two groups for the skeletal posterior movement of the mandible, but posterior movement of the mandibular soft tissues in group 2 was larger than group 1. There were no significant differences between the two groups for the vertical hard tissue proportion changes of the mandible, but the vertical soft tissue proportion changes of the mandible in group 2 was larger than group 1. There was a significant correlation between the sagittal hard tissue and soft tissue changes of the maxilla and mandible, but there was no significant difference in the vertical changes. Conclusion: The clockwise rotation of the mandible occurred from use of the face mask, and posterior movement of soft tissues of the mandible was higher in Cl III patients with low LFH than with high LFH.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.2
• /
• pp.44-47
• /
• 2019

Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the surface property of ACL thin film to enhance the property of etch hard mask. In this research, ACL are deposited by 6 inch plasma enhanced chemical vapor deposition system with $C_3H_6$ and $N_2$ gas mixture. Surface properties of deposited ACL are investigated depending on gas flow, pressure, RF power. Fourier transform infrared is used for the analysis of surface chemistry, and X-ray photoemission spectra is used for the structural analysis with the consideration of the contents of $sp^2$ and $sp^3$ through fitting of C1s. Also mechanical properties of deposited ACL are measured in order to evaluate hardness.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.2
• /
• pp.48-52
• /
• 2019

Virtual metrology, which is one of APC techniques, is a method to predict characteristics of manufactured films using machine learning with saving time and resources. As the photoresist is no longer a mask material for use in high aspect ratios as the CD is reduced, hard mask is introduced to solve such problems. Among many types of hard mask materials, amorphous carbon layer(ACL) is widely investigated due to its advantages of high etch selectivity than conventional photoresist, high optical transmittance, easy deposition process, and removability by oxygen plasma. In this study, VM using different machine learning algorithms is applied to predict the thickness of ACL and trained models are evaluated which model shows best prediction performance. ACL specimens are deposited by plasma enhanced chemical vapor deposition(PECVD) with four different process parameters(Pressure, RF power, $C_3H_6$ gas flow, $N_2$ gas flow). Gradient boosting regression(GBR) algorithm, random forest regression(RFR) algorithm, and neural network(NN) are selected for modeling. The model using gradient boosting algorithm shows most proper performance with higher R-squared value. A model for predicting the thickness of the ACL film within the abovementioned conditions has been successfully constructed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.66-66
• /
• 2006

Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.05a
• /
• pp.127-127
• /
• 2004

입자분사 가공(abrasive jet machining)은 과거에는 녹(rust) 도색(painting)의 제거 흑은 디버링(deburring), 표면 처리 등의 용도에 국한되어 사용되어졌다. 한편 최근 들어 반도체 제작공정이나 MEMS 공정 등에 적용되는 실리콘(silicon) 등의 세라믹 재료의 미세가공분야가 주목받고 있으며, 따라서 이와 관련된 많은 연구가 진행되고 있다. 한편, 세라믹 재료는 파괴인성이 매우 낮고 취성이 강하기 때문에 크랙발생 후 큰 응력이 연속적으로 주어지면 크랙은 음속으로 진행되어 파단 되는 특성이 있어서 일반적인 기계가공이 매우 어렵다.(중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.74-74
• /
• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Textile Coloration and Finishing
• /
• v.29 no.1
• /
• pp.45-54
• /
• 2017

Ultraviolet radiation have much influenced with a deep wrinkles, roughness, laxity of skin damage and pigmentation through oxidative stress and oxidative photo-damage. This study investigates the functional properties of hydrogel facial mask sheets made from agar, Styela clava tunics and Broussonetia papyrifera tunics. The skin of S. clava is covered with a hard cellulose containing glycoprotein, glycosaminoglycan and chondroitin sulfate. B. papyrifera is better known as Paper mulberry. It contains kazinol which serves as a tyrosinase inhibitor and skin whitening agent. The tensile strength of facial mask sheet was measured by universal testing machine, and the water absorption and moisture permeability of facial mask sheet were measured by dryer. Additionally, the DPPH assay and MTT assay were conducted for anti-oxidative activity and cytotoxicity of facial mask sheet. The whitening effect of the facial mask sheet was measured by tyrosinase inhibitor assay. These tests showed that the three ingredients are suitable cosmetic materials. The results reveal that they produce a high quality hydrogel facial mask sheet when the membrane contains 1%(W/V) of agar, 0.1%(W/V) of B. papyrifera tunics and 0.05%(W/V) of S. clava tunics.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.10a
• /
• pp.985-988
• /
• 2007

This paper presents techniques to make image enhancement using unsharp masking. It is the technique to make image enhancement by automatically find the three parameters that makes hard to use the unsharp mask technique. To optimize the three parameters(Threshold, Amount, Radius), at first classify the pixels in the image to three groups, and then according to the groups, apply the unsharp mask to the image differently. We experimented and analyzed the rate of image enhancement by comparing images which is enhanced by human and which is enhanced by proposed technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.88-89
• /
• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.