• 제목/요약/키워드: Hall effect sensor

검색결과 110건 처리시간 0.026초

Planar Hall Sensor Used for Microbead Detection and Biochip Application

  • Thanh, N.T.;Kim, D.Y.;Kim, C.G.
    • Journal of Magnetics
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    • 제12권1호
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    • pp.40-44
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    • 2007
  • The Planar Hall effect in a spin valve structure has been applied as a biosensor being capable of detecting $Dynabeads^{(R)}$ M-280. The sensor performance was tested under the application of a DC magnetic field where the output signals were obtained from a nanovoltmeter. The sensor with the pattern size of $50{\times}100{\mu}m^2$ has produced high sensitivity; especially, the real-time profiles by using that sensor revealed significant performance at external applied magnetic field of around 7.0 Oe with the resolution of 0.04 beads per $\mu m^2$. Finally, a successful array including 24 patterns with the single sensor size of $3{\times}3{\mu}m^2$ has shown the uniform and stable signals for single magnetic bead detection. The comparison of this sensor signal with the others has proved feasibility for biosensor application. This, connecting with the advantages of more stable and high signal to noise of PHR sensor's behaviors, can be used to detect the biomolecules and provide a vehicle for detection and study of other molecular interaction.

이동통신 단말기 카메라의 손떨림 보정 장치의 H 제어 (H Control on the Optical Image Stabilizer Mechanism in Mobile Phone Cameras)

  • 이치범
    • 한국생산제조학회지
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    • 제23권3호
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    • pp.266-272
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    • 2014
  • This study proposes a closed-loop shaping control method with $H_{\infty}$ optimization for optical image stabilization (OIS) in mobile phone cameras. The image stabilizer is composed of a horizontal stage constrained by ball bearings and actuated by the magnetic force from voice coil motors. The displacement of the stage is measured by Hall effect sensors. From the OIS frequency response experiment, the transfer function models of the stage and Hall effect sensor were identified. The weight functions were determined considering the tracking performance, noise attenuation, and stability with considerable margins. The $H_{\infty}$ optimal controller was executed using closed-loop shaping and limiting the controller order, which should be less than 6 for real-time implementation. The control algorithm was verified experimentally and proved to operate as designed.

Design Parameter Optimization for Hall Sensor Application

  • Park, Chang-Sung;Cha, Gi-Ho;Kang, Hyun-Soon;Song, Chang-Sup
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2001년도 ICCAS
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    • pp.86.3-86
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    • 2001
  • Hall effect sensor using 7um, 1.7 ohm-cm or 10um, 3.5 ohm-cm Bipolar process was successfully developed. The Hall sensor consists of various patterns, such as regular shapes, rectangles, diamond, hexagon and cross shapes to optimize offset voltage and sensitivity for proper applications. In order to measure offset voltage in chip scale the Agilent company´s 4156C and Nano-Voltage Meter were used and the best structure in offset voltage was finally selected by using ceramic package. The patterns appear to be the quadri-rectangular patterns entirely and three-parallelogram patterns. The measured offset voltages were found to be about 173-365uV. Meanwhile, in ...

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자기센서내에서 확산 전류가 홀 계수에 미치는 영향 (DIFFUSION CURRENT EFFECT ON THE HALL COEFFICIENT IN A MAGNETIC FIELD SENSOR)

  • 이승기;강욱성;오광훈;전국진;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1991년도 하계학술대회 논문집
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    • pp.187-190
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    • 1991
  • The analytical model to investigate the effects of the drift and diffusion carrier transport upon the Hall effect is presented and applied to the general PN junction structure. The diffusion current effect on the Hall coefficient can not be considered in the conventional model, which produces the conversion of the direction of the induced Hall field between measured and calculated values. The proposed analytical model which considers the diffusion current effect provides the coincident results with the previous experimental results.

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InSb 출소자의 자기적 특성 (Magnetic Properties of InSb Hall Devices)

  • 이우선;최권우;조준호;정용호;김상용
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2000년도 추계학술대회논문집
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    • pp.49-52
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    • 2000
  • In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details If the operating principle and secondary effects, and through the application If ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

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InSb 홀소자의 자기적 특성 (Magnetic Properties of InSb Hall Devices)

  • 이우선;최권우;조준호;정용호;김상용;서용진;김남오
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.49-52
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    • 2000
  • In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details if the operating principle and secondary effects, and through the application if ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

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비 접촉 각도 센서 응용을 위한 수직 Hall 소자의 제작 (The Fabrications of Vertical Trench Hall-Effect Device for Non-contact Angular Position Sensing Applications)

  • 박병휘;정우철;남태철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.251-253
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    • 2002
  • We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.

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Hall 센서를 이용한 엘리베이터 와이어 로프의 비파괴 검출시스템의 개발 (Development of Nondestructive Detecting System for Elevator Wire Ropes using Hall-effect Sensors)

  • 김성덕
    • 센서학회지
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    • 제10권1호
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    • pp.33-41
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    • 2001
  • 와이어 로프는 무거운 중량을 안전하게 운반하거나 기계적인 에너지를 빠르게 전송하는 곳과 같은 산업응용 분야에 광범위하게 사용되어 왔다. 특히, 운전 중 엘리베이터의 와이어 로프가 파손되면 큰 재산 상 손실과 주변 인명의 심각한 상해를 초래할 수 있다. 따라서, 와이어 로프의 정기적인 검사는 매우 중요하다. 와이어 로프의 고장 검출은 로프의 구조, 특성, 결함 특성, 검출방법과 신호처리 방법에 대한 기본적인 이해가 요구된다. 이 연구에서는 엘리베이터에 노화된 와이어 로프에 대한 마모, 단선, 부식과 형붕괴와 같은 결함을 검출하기 위하여, Hall 센서를 결합한 새로운 결함 검출시스템의 개발에 대하여 다룬다. 휴대용 계측기로서 검출기를 사용하기 위하여, Hall 센서를 가진 센싱 부분과 아날로그 신호처리 및 프로그램의 제작에 대한 몇 가지 특성들이 서술되었다. 제작된 검출시스템에 대한 실험과 실장시험 결과 역시 제시되었다. 그 결과, 검출시스템은 사용 중인 노화된 와이어 로프의 결함을 검출하는데 양호한 효율성을 갖는다는 것을 확인하였다.

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가속수명시험을 통한 전류센서의 수명 예측 (Lifetime estimation for current sensor by accelerated life test)

  • 김제민;최성순;마병진;이관훈;송병석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.257-258
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    • 2008
  • Hall-type current sensors have been widely used in many fields such as elevator and train system. To estimate lifetime of hall-type current sensors, an accelerated life test with real-time monitoring system simultaneously was designed and performed in high temperature environment with three different temperatures. From the experimental results, activation energy was about 0.9 eV, and acceleration factor was about 450 based on Arrhenius model. As a results, $B_{10}$ lifetime of hall-type current sensor is estimated to be 65,460 hours.

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유한요소법을 이용한 자기센서용 자속집속기의 해석 (Analysis of Magnetic Concentrator of Magnetic Sensor by Using Finite Element Method)

  • 신광호
    • 한국자기학회지
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    • 제23권3호
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    • pp.89-93
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    • 2013
  • 본 연구에서는 홀센서의 감도를 높이기 위해 사용되는 자속집속기의 두께, 홀소자와의 상대적 위치, 모서리 형상에 따르는 발생 자계를 유한요소법을 이용하여 계산하였다. 자속집속기의 두께가 얇을수록 발생 자계가 커지는 것을 알 수 있었고, 이 경향은 반자계를 고려한 겉보기 상대투자율의 두께의존성과 유사하다는 것을 알 수 있었다. 홀소자와의 상대적 위치에 따라 최대의 자계를 발생시키는 자속집속기의 최적의 두께가 변화하는 것을 알 수 있었다. 자속집속기와 홀소자의 간격이 가까울 경우, 자속집속기의 모서리 형상에 경사가 없는 것이 유리하지만, 자속집속기와 홀소자의 간격이 멀어질수록 자속집속기의 모서리를 경사지게 하는 것이 유리하다는 것을 알 수 있었다.