• Journal of Magnetics
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• 제19권2호
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• pp.151-154
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• 2014

Recent years have seen an increasing range of planar Hall resistive (PHR) sensor applications in the field of magnetic sensing. This study describes a new application of the PHR sensor to monitor a current. Initially, thermal drift experiments of the PHR sensor are performed, to determine the accuracy of the PHR signal output. The results of the thermal drift experiments show that there is no considerable drift in the signals attained from 0.1, 0.5, 1 and 2 mA current. Consequently, the PHR sensor provides adequate accuracy of the signal output, to perform the current monitoring experiments. The performances of the PHR sensor with bilayer and trilayer structures are then tested. The minimum detectable currents of the PHR sensor using bilayer and trilayer structures are $0.51{\mu}A$ and 54 nA, respectively. Therefore, the PHR sensor having trilayer structure is the better choice to detect ultra low current of few tens nanoampere.

• 한국초전도ㆍ저온공학회논문지
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• 제19권1호
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• pp.26-29
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• 2017

We studied the distribution of the current density and its magnetic-field dependence in GdBCO coated conductors with AC bias currents using low temperature scanning Hall probe microscopy. We selectively measured magnetic field profiles from AC signal obtained by Lock-in technique and calculated current distributions by inversion calculation. In order to confirm the AC measurement results, we applied DC current corresponding to RMS value of AC current and compared distribution of AC and DC transport current. We carried out the same measurements at various external DC magnetic fields, and investigated field dependence of AC current distribution. We notice that the AC current distribution unaffected by external magnetic fields and preserved their own path on the contrary to DC current.

• Steel and Composite Structures
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• 제42권6호
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• pp.723-732
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• 2022

The present research is concerned to study the effect of fractional parameter and rotation on the propagation of Rayleigh waves in an orthotropic magneto-thermoelastic media with three-phase-lags in the context of fractional order theory of generalized thermoelasticity with combined effect of rotation and hall current. The secular equations of Rayleigh waves are derived by using the appropriate boundary conditions. The wave properties such as phase velocity, attenuation coefficient are computed numerically and the numerical simulated results are presented through graphs to show the effect on all the components. Some special cases are also discussed in the present investigation.

• 한국초전도ㆍ저온공학회논문지
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• 제9권3호
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• pp.1-4
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• 2007

The current profiles in a coated conductor with transport current were calculated using an iterative inversion method from the data of the magnetic flux density profiles measured. The applied current was increased from 0 to 60 A by 10A step and decreased down to -60A by 20A step. The magnetic flux profiles were measured at a distance of 400 mm above the surface of the coated conductor using a scanning hall probe method. The current profiles calculated were very different from the Bean model: current density profile is not a constant in the critical region. However the aspect of the change of the current and magnetic flux density profiles in the case of decreasing applied current are similar to the theoretical calculations in Brandt's paper.

• 한국항공우주학회지
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• 제39권12호
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• pp.1133-1140
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• 2011

기존의 홀추력기 개념 설계는 비용이 많이 소요되며 과거의 데이터에 기반한 실험적 방법에 근거하고 있다. 본 연구에서는 이러한 홀추력기의 설계 과정을 향상시키기 위해 최근 제안된 수치적 방법에 근거하여 설계 목적에 적합한 설계 공간을 설정하고 이에 대한 설계 공간 탐색을 수행하였다. 설계 공간 탐색의 결과를 통해 기본적으로 주어진 설계 공간에 대한 성능 범위를 결정하였으며 성능간의 관계를 분석하였다. 세부적인 결과 분석을 통해 홀추력기의 주요한 설계 변수로는 양극에서의 질량유량과 방전전압임을 도출하였다.

• 센서학회지
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• 제25권5호
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• pp.310-319
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• 2016

Three types of gap sensors, a capacitive gap sensor, an eddy current gap sensor, and a Hall effect gap sensor are described and evaluated through experiments for the purpose of precise gap sensing for micrometer scale movement, and a novel type of differential hall effect gap sensor is proposed. Each gap sensor is analyzed in terms of resolution and environment dependency including temperature dependency. Furthermore, a transport system for AMOLED deposition is introduced as a typical application of gap sensors, which are recently receiving considerable attention. Based on the analyses, the proposed differential Hall effect gap sensor is found to be the most suitable gap sensor for precise gap sensing, especially for application to a transport system for AMOLED deposition. The sensor shows resolution of $0.63mV/{\mu}m$ for the overall range of the gap from 0 mm to 2.5 mm, temperature dependency of $3{\mu}m/^{\circ}C$ from $20^{\circ}C$ to $30^{\circ}C$, and a monotonic characteristic for the gap between the sensor and the target.

• 한국항공우주학회지
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• 제39권2호
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• pp.195-200
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• 2011

소형 지구관측위성의 궤도 보정을 위한 저전력 홀 추력기를 개발하였다. 원통형 홀 추력기의 성능 특성을 파악하기 위해 원통형 홀 추력기과 고리형 홀 추력기를 제작하여 시험을 수행했고 그 결과를 비교 분석하였다. 원통형 추력기는 채널 내경에 따른 성능 변화를 보기 위해 28 mm, 50 mm 두 종류로 제작되었다. 다양한 방전 조건에서 추력과 이온 에너지, 이온 전류를 측정하였다. 결과는 원통형 추력기가 고리형 추력기에 비해 연료 효율과 전압 효율에서 더 뛰어나고, 전류 효율에서는 떨어짐을 보였다.

• 센서학회지
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• 제7권4호
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• pp.225-233
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• 1998

$150^{\circ}C$정도의 높은 온도를 갖는 경우와 같은 열악한 환경 조건하에서의 기어 톱니의 회전수 검출을 위한 센서의 원리, 설계, 응용에 대하여 연구하였다. 톱니 바퀴의 회전의 검출을 위해 바이폴라 실리콘 공정에 의하여 SIMOX 기판위에 한 쌍의 Hall 소자들을 제조하여 차동검출방식을 사용하였다. 제작된 고온용 Hall 소자는 $-40^{\circ}C{\sim}150^{\circ}C$의 넓은 온도 영역을 지니며 동작영역에서의 적감도는 약 510 V/AT이었다. 차동 Hall 소자는 단일 Hall 소자를 사용할 때보다 넓은 온도 영역에 걸쳐 센서와 톱니 바퀴사이의 가능한 최대 거리를 보다 넓게 만들어 주었으며 최대 검출거리는 4mA 의 구동전류에서 약 4.5mm이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1431-1433
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• 1995

This paper describes the characteristics of Si Hall sensors fabricated on a SOI(Si-on-insulator} structure, in which the SOI structure was forrmed by SDB(Si-wafer direct bonding) technology. The Hall voltage and the sensitivity of implemented Si Hall devices show good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average $600V/A{\cdot}T$. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the product Sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. From these results, Si Hall sensors using the SOI structure presented here are very suitable for high-temperature operation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.74-77
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• 2002

In this paper we present a novel temperature compensated Hall effect power IC for accurate operation of wide temperature and high current drive of the motor coil. In order to compensate the temperature dependence of Hall sensitivity with negative temperature coefficient(TC), the differential amplifier has the gain consisted of epi-layer resistor with positive TC. The material of Hall device and epi-resistor is epi-layer with the same mobility. The variation of Hall sensitivity is -38% at 150$^{\circ}C$ and 88% at - 40$^{\circ}C$. But the operating point(B$\sub$op/) and release point(B$\sub$RP/) of the Hall power IC are within ${\pm}$25%. The experimental results show very stable and accurate performance over wide temperature range of -40$^{\circ}C$ to 125$^{\circ}C$.