Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.07c
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- Pages.1431-1433
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- 1995
Fabrication of High-Temperature Si Hall Sensors Using Direct Bonding Technology
직접접합기술을 이용한 고온용 Si 홀 센서의 제작
- Chung, G.S. (Dongseo Univ. of Tech.) ;
- Kim, Y.J. (Gyeongsang Natl. Uni.) ;
- Shin, H.K. (Donga Univ.) ;
- Kwon, Y.S. (Donga Univ.)
- Published : 1995.07.20
Abstract
This paper describes the characteristics of Si Hall sensors fabricated on a SOI(Si-on-insulator} structure, in which the SOI structure was forrmed by SDB(Si-wafer direct bonding) technology. The Hall voltage and the sensitivity of implemented Si Hall devices show good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average
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