• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.33-35
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• 2008

We have fabricated and evaluated new high efficiency green light emitting phosphorescent devices with an emission layer of $[TCTA_{1/3}TAZ_{2/3}/TAZ]:Ir(ppy)_3$. The whole experimental devices have the basic structure of $2-TNATA(500 {\AA})/NPB(300{\AA})/EML(300{\AA})/BCP(50{\AA})/SFC137(500{\AA})$ between anode and cathode. We have also fabricated conventional phosphorescent devices with emission layers of $(TCTA_{1/3}TAZ_{2/3}):Ir(ppy)_3$ and $(TCTA/TAZ):Ir(ppy)_3$ and compared their electroluminescence characteristics with those of the device with an emission layer of $(TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ):Ir(ppy)_3$. The current density(J), luminance(L), and current efficiency($\eta$) of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ were 95 $mA/cm^2$, 25000 $cd/m^2$, and 27 cd/A at an applied voltage of 10V, respectively. The maximum current efficiency was 52 cd/A under the luminance of 400 $cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 513nm and 65nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de l'Eclairage) chart. Under the luminance of 15000 $cd/m^2$, the current efficiency of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ was 34 cd/A, which has been improved 1.7 times and 1.4 limes compared to those of the devices with emission layers of $(300{\AA}-TCTA_{1/3}TAZ_{2/3}): 10%-Ir(ppy)_3$ and $(100{\AA}-TCTA/200{\AA}-TAZ):10%-Ir(ppy)_3$, respectively.

• 한국진공학회지
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• 제10권1호
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• pp.98-103
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• 2001

차세대 평판 디스플레이로서 플라즈마표시기(Plasma Display Pannel, PDP)는 현재 350 $\textrm{cd/cm}^2$의 휘도와 l lm/W 정도의 효율을 갖는 AC형 PDP가 개발되어 있으나, 음극선관(CRT)의 피크 휘도가 700 $\textrm{cd/cm}^2$, 효율이 수 1 m/W인 것을 감안하면 음극선관을 대체할 수 있는 표시기가 되기 위해서는 PDP의 휘도와 효율을 더욱 개선시킬 필요가 있다. 반사형 AC-PDP셀 내에서 가스 방전으로 발생된 진공 자외선(Vacuum Utraviolet, VUV) 중 배면판 쪽으로 진행되는 부분은 형광체를 여기시켜 가시광을 발생시키게 되지만, 전면판 쪽으로 진행되는 부분은 발광에 사용되지 못하고 있다. 본 연구에서는 PDP 셀 전면판의 유전체와 보호막 사이에 VUV를 반사시킬 수 있는 다이크로익 미러(Dichroic mirror)를 증착함으로써 셀 내의 VUV 이용 효율을 증가시켜 휘도와 효율을 향상시킬 수 있는 방법을 제안하였다. 다이크로익 미러를 정확하게 설계하기 위해서 미러에 사용되는 $MgF_2$, $LaF_3$, MgO 박막의 VUV 영역에서의 광학 계수(Optical Constant)를 실험과 시뮬레이션을 이용한 광도 측정법(Photometric method)을 통해서 구하였다 (1). 이 값들을 이용해서 플라즈마 표시기의 패널 방전에서 방출되는 빛의 휘도를 결정짓는 가장 중요한 요소인 147nm 부근의 진공자외선을 반사시킬 수 있는 다이크로익 미러를 설계하였다. 다이크로익 미러는 전자빔 증착기 (I-beam evaporator)를 이용하여 증착되었고, 박막의 광학 계수 결정을 위한 반사도(Reflectance), 투과도(Transmittance) 측정과 다이크로익 미러의 반사도 측정은 Reflectometer를 이용해 측정하였다. 패널 실험은 동일한 패널 내에 반쪽 면에만 다이크로익 미러를 증착시켜 방전 전압에 따른 휘도와 효율을 미러가 없는 면과 동일 조건하에 비교 측정하였다. 여러 방전 조건하에서 다이크로익 미러를 AC-PDP에 적용한 경우가 그렇지 않은 경우보다 휘도와 효율이 약 20-30% 정도 증가함을 확인하였다.

• 한국진공학회지
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• 제22권6호
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• pp.327-334
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• 2013

InAs/GaSb 제2형 응력 초격자(strained layer type II superlattice, T2SL)을 이용한 nBn 구조 장적외선 검출소자의 설계 및 제작을 하였다. InAs와 GaSb 두께에 따른 T2SL 구조의 장적외선 밴드갭 에너지를 Kronig-Penney 모델을 이용하여 계산하였다. 소자의 암전류 밀도를 줄이기 위해서, nBn 구조에서 장벽층인 $Al_{0.2}Ga_{0.8}Sb$ 성장 중에 Te 보상도핑(compansated doping)을 하였다. 온도(T) 80 K 및 인가전압($V_b$) -1.5 V에서, 반응스펙트럼 측정을 통한 소자의 차단파장은 ${\sim}10.2{\mu}m$ (~0.122 eV)로 나타났다. 또한 온도 변화에 따른 암전류 측정으로부터 도출된 활성화 에너지는 0.128 eV로 계산 되었다. T=80 K 및 $V_b$=-1.5 V에서 암전류는 $1.0{\times}10^{-2}A/cm^2$으로 측정되었다. 흑체복사 적외선 광원을 이용한 반응도(Responsivity)는 소자 온도 80 K 및 인가전압 -1.5 V의 조건에서 0.58 A/W로 측정되었다.

• 한국전자파학회논문지
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• 제20권1호
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• pp.75-82
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• 2009

본 논문에서는 UHF 대역에서 동작하는 기생소자를 가지는 U-형태의 광대역 RFID 태그 안테나를 제안하였다. 제안한 태그 안테나는 복사부에 해당하는 U-형태의 반파장 다이폴 안테나 상단 중앙에 역방향으로 U-형태의 기생소자를 삽입하였고, 본체 하단 중앙에 사각 형태의 급전 구조를 삽입하여 상용 태그 칩과 안테나의 공액 정합을 용이하게 하였다. 제안된 태그 안테나는 VSWR<2를 기준으로 한 $882{\sim}927\;MHz$의 대역폭 안에서 3.16 dB 이하의 이득편차 특성을 가졌고, VSWR<5.8을 기준으로 한 대역폭은 $857{\sim}958.5\;MHz$로 전세계 UHF 대역폭을 모두 수용하였으며, 대역폭 내에서 5.07 dB 이하의 이득편차 특성을 가졌다. 또한 최소 이득편차 특성이 대역폭 중심 주파수에 나오도록 하여 주파수에 따른 이득편차 특성 변화를 최소화하였다.

• 한국산학기술학회논문지
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• 제13권7호
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• pp.3140-3145
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• 2012

본 논문에서는 코프래너 도파관(CPW)으로 급전된 소형 슬롯 안테나 설계방법에 대하여 연구하였다. 폭이 좁은 직사각형 슬롯에 삽입된 T형 튜닝 스트립의 위치, 폭, 길이를 조절하여 슬롯 안테나와 CPW 급전선이 임피던스 정합되도록 하였다. 슬롯의 길이 변화로 공진 주파수를 조절할 수 있고, 슬롯을 구부려서 소형화할 수 있다. 소형 슬롯 안테나의 공진 주파수와 임피던스 특성이 반 파장 슬롯 안테나와 비교하여 큰 변화가 없으므로 소형화 설계가 용이하다. 2.45 GHz ISM 대역용으로 소형 슬롯 안테나를 설계하고, FR4 기판(비유전율=4.4, 두께 0.8 mm) 상에 제작한 후 특성을 실험하였다. 측정된 결과들은 시뮬레이션과 잘 일치하여 본 연구의 타당성을 검증하였다. 제작된 소형 슬롯 안테나의 정재파비(SWR)가 2이하인 대역폭은 200 MHz(=2.32-2.52 GHz)로서 ISM 대역(2.4-2.48 GHz)용으로 적합하다. 측정된 복사패턴은 모노폴과 유사하게 E-면에서 8자형 지향성 패턴을 보이고, H-면내에서는 거의 무지향성 패턴을 보이며, 이득은 2.0 dBi 이므로 무선 랜, RFID, 휴대단말기용 안테나 등으로 응용이 적합할 것으로 기대된다.

• 한국재료학회지
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• 제22권1호
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• pp.24-28
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• 2012

$In_2O_3$ films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post deposition annealing in nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. After deposition, the annealing process was conducted for 30 minutes at 200 and $400^{\circ}C$. XRD pattern analysis showed that the as deposited films were amorphous. When the annealing temperature reached 200-$400^{\circ}C$, the intensities of the $In_2O_3$ (222) major peak increased and the full width at half maximum (FWHM) of the $In_2O_3$ (222) peak decreased due to the crystallization. The films annealed at $400^{\circ}C$ showed a grain size of 28 nm, which was larger than that of the as deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical sheet resistance decreased. In this study, the films annealed at $400^{\circ}C$ showed the highest optical transmittance of 76% and also showed the lowest sheet resistance of $89{\Omega}/\Box$. The figure of merit reached a maximum of $7.2{\times}10^{-4}{\Omega}^{-1}$ for the films annealed at $400^{\circ}C$. The effect of the annealing on the work-function of $In_2O_3$ films was considered. The work-function obtained from annealed films at $400^{\circ}C$ was 7.0eV. Thus, the annealed $In_2O_3$ films are an alternative to ITO films for use as transparent anodes in OLEDs.

• 한국재료학회지
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• 제18권7호
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• pp.347-351
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• 2008

We have fabricated and evaluated newNew high high-efficiency green green-light light-emitting phosphorescent devices with an emission layer of [$TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ$] : $Ir(ppy)_3$ were fabricated and evaluated, and compared the electroluminescence characteristics of these devices were compared with the conventional phosphorescent devices with emission layers of ($TCTA_{1/3}TAZ_{2/3}$) : $Ir(ppy)_3$ and (TCTA/TAZ) : $Ir(ppy)_3$. The current density, luminance, and current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90^{\circ}{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ were $95\;mA/cm^2$, $25000\;cd/m^2$, and 27 cd/A at an applied voltage of 10 V, respectively. The maximum current efficiency was 52 cd/A under the a luminance value of $400\;cd/m^2$. The peak wavelength and FWHM (FWHM (full width at half maximum) in the electroluminescence spectral were 513 nm and 65 nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de I'Eclairage) chart. Under the a luminance of $15000\;cd/m^2$, the current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ was 34 cd/A, which has beenshowed an improvement of improved 1.7 and 1.4 times compared to those of the devices with emission layers of ($300{\AA}-TCTA_{1/3}TAZ_{2/3}$) : 10%-$Ir(ppy)_3$ and ($100{\AA}-TCTA/200{\AA}$-TAZ) : 10%-$Ir(ppy)_3$, respectively.

• 한국수산과학회지
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• 제37권1호
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• pp.57-64
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• 2004

Effects of light and temperature on the nitrate uptake and germling growth of Enteromorpha compressa (L.) Greville (Chlorophyta) were studied based on samples from Cheongsapo near Busan, Korea. In addition, their effects on fatty acids composition in thallus were examined. Nitrate uptake showed saturation kinetics. $V_{max}$ (maximal uptake rate) and its $K_s$ (half-saturation constant) at $20^{\circ}C,\;80\;{\mu}mol\;m^{-2}s^{-1},$ white light were $1.571\;{\mu}mol{\cdot}g\;fr\;wt^{-1}{\cdot}h^{-1}$ and 3.56 ${\mu}M$, respectively. In nitrate uptake with irradiance, wavelength and temperature, its rate represented respectively the highest value as $1.405\pm0.020,\;0.623\pm0.040,\;1.422\pm0.022\;{\mu}mol{\cdot}g\;fr\;wt^{-1}{\cdot}h^{-1}\;at\;100\;{\mu}mol\;m^{-2}s^{-1},$ red light, $20^{\circ}C$ and exhibited significant difference among the examined conditions (p<0.001). Germling growth of E. compressa also showed saturation kinetics, and $V_{max}$ and its $K_s$ value at $20^{\circ}C,\;100\;{\mu}mol\;m^{-2}s^{-1},$ 12:12 h were $56.18\%\;day^{-1}$ and 0.33 ${\mu}M$, respectively. SGR (specific growth rate) recorded a maximal value as 49.33-54.80, 39.07-50.72, $47.20-54.53\%\;dat^{-1}$ at $120\;{\mu}mol\;m^{-2}s^{-1},$ blue light and $18^{\circ}C$ respectively, and showed significant difference (p<0.001). Red light made the effective nitrate uptake, but germling growth was largely limited by the light. In fatty acids analysis, PUFAs (polyunsaturated fatty acids) were high at blue light, $18^{\circ}C,\;100\;{\mu}M\;NO_3^-.$ However, irradiance did not affect the production of PUFAs. In conclusion, nitrate uptake and germling growth of E. compressa showed saturation kinetics to external nitrate concentration, and were significantly affected by irradiance, wave length and temperature. Fatty acid composition was also influenced by the factors except for irradiance. Their maximal values, together with the highest production of PUFAs, were found at blue light band, $20^{\circ}C,\;100\;{\mu}mol\;m^{-2}s^{-1},\;and\;100\;{\mu}M\;NO_3^-.$

• 한국결정성장학회지
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• 제19권1호
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• pp.6-10
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• 2009

본 논문에서는 혼합소스(mixed-source) HVPE(hydride vapor phase epitaxy)방법으로 선택성장(SAC: selective area growth) GaN/AlGaN 이종접합구조의 발광다이오드를 r-plane 사파이어 기판 위에 제작하였다. SAG-GaN/AlGaN DH(double heterostructure)는 고온 GaN 버퍼층, Te 도핑된 AlGaN n-클래딩층. Gan 활성층. Mg 도핑된 AlGaN p-클래딩층. Mg 도핑된 GaN p-캡층으로 구성되어있다. GaN/AlGaN 이종접합구조의 발광다이오드의 특성을 알아보기 위해 SEM을 통한 구조적 분석과 전류-전압 측정(I-V: current-voltage measurement), 전류-광출력(EL: electroluminescence) 측정을 통하여 전기적, 광학적 특성을 평가하였다.

• 한국환경과학회지
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• 제13권1호
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• pp.99-107
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• 2004

This research is to determine the level of environmental pollution at a blasting construction area which is the origin of noise, vibration, and suspended particle, and to compare the results with other domestic and international standard data. This experiment is also to find out the effects resulting from blasting construction and to propose a plan that can decrease environmental pollution. The blasting construction area is a factory site which is about one and half million square meter and sewage disposal plant is about ninety thousand square meter. Both were selected as the areas for the tests to be conducted in determination test. The test to determine the level of noise, vibration, and total suspended particle was conducted thirty times around the blasting construction area by comparing measurement results and numerical analysis. However, as the test was not conducted in the laboratory but in the actual blasting construction area, it was not possible to do the test with the same exact conditions each true. Therefore, the test was not ideal as conditions could change from test to test. For the most part, the level of noise was below the standard level of 70dB. Every vibration test was under the standard limitation. For example, a house, 200m away was tested for noise and vibration and the level was found to be under the 0.2 cm/sec which is the standard for specialty designed cultural sites., i.e very low level. Also a buried oil pipeline that was 30m away also marked under 2.0cm/sec which is the norm for an industrial area. However, if there were an oil pipeline under the house, the amount of charging gunpowder per hole should be decreased compared to the amount used in the test. The test result for suspended particles under the standard limitation which is 24hour average 300$\mu\textrm{g}$/㎥ at a distance from blasting wavelength, but at detonator, total suspended particle from the blast origin exceeded the standard limitation. If explosion occurs when it detonates in the hole, most of the energy would be absorbed in the crushing of rocks, but some remaining energy would make noises and vibration inevitable. So the important thing is how to minimize the environmental pollution from the blasting. There should be regulations in order that the standard limitation is not exceeded, and to decrease the environmental pollution from the blasting.