• Journal of the Korea Safety Management & Science
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• v.12 no.4
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• pp.87-92
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• 2010

The mask-face interface design should consider the face shape to improve the half mask respirator's fit ratio. This study tried to design the mask-face interface using recent Korean face data. By using the data of 1536 men's 3D face scanning (Size Korea data), head clay mock-up was made and mask-face interface line was extracted from this head mock-up. Using this interface line, the half-mask prototype was made. According to the quantitative fitting test, the proposed mask was found to be well fitted (average fit-ratio > 100). The proposed method had two advantages. 1) The method could use massive head-related anthropometric data like Size Korea data. 2) The qualitative fit test (observation) could be conducted very quickly by fitting the prototype to the head mock-up. However, this method also had several limitations. 1) The head clay mock-up could be different according to the mock-up maker. 2) The average values of the head-related anthropometric data were used to make the head mock-up. Small and large size head mock-ups should be made and tested.

• The Korean Journal of Emergency Medical Services
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• v.17 no.3
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• pp.21-28
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• 2013

Purpose: The purpose of this study is to get basic user guidelines of safe and efficient bag-valve-mask application on patients having abnormal pathophysiological pulmonary conditions. Methods: This study was performed by pre-qualified 35 EMS junior and senior students. Participants were instructed to compress ambulatory bag randomly about half, one-third, one-fourth within different airway resistance and pulmonary compliance. Resultant tidal volume and pulmonary wedge pressures on RespiTranier monitor were analysed in relation to pulmonary physiologic index. Results: At least over half compression of bag guaranteed minimal tidal volume regardless of pulmonary conditions. There was no increase of pulmonary wedge pressure above the level of barotrauma on half compression at any pulmonary conditions. Conclusion: Assisted ventilation with ambulatory bag on patients with pathological pulmonary conditions should be over half compressed regardless of respiratory disease entity.

• Journal of the Korean Society of Costume
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• v.58 no.4
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• pp.13-25
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• 2008

This study is on the various style and characteristics of mask, and was performed empirically by reviewing the related materials such as the literature, precedent studies, fashion works, and home and foreign fashion magazines. As a result of the study, the style of mask in the modern fashion is roughly categorized by full-covered style, half-covered style, and over-half-covered style which is covered over 50% of a face. And, mask is utilized on a hat or a dress all over, or is produced by a elaborate makeup. Mask with lots of variation has three big characteristics, which are sense of disguise, sense of ornamentation, sense of grotesquery. First, sense of disguise means deviation or tool of affectation instead of cultural standard norm through transforming or masquerading as an imagery person or animal in ancient myths, famous artistes, etc. It could be developed to express a designer's identity. Second, mask decorated with various styles and materials has sense of ornamentation, which means natural human desire of expression for beauty, and at the same time human mind longing for experience a fantastic and ideal inner world being deviated from the present world even indirectly. Third, ignoring the original format of eyes, nose, and mouth, using extraordinarily various techniques such as distortion, extreme, exaggeration, concealment, or combining with animal images, mask has sense of grotesquery inducing humor and horror simultaneously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.121-124
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• 2004

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition(MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum(FWHM) decreased from 480 arcsec to 409 arcsec. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GgN layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.582-586
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Proceedings of the Korea Society of Design Studies Conference
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• 2003.05a
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• pp.62-63
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• 2003

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.13-18
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• 2010

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.32 no.2
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• pp.146-152
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• 2022

Objectives: The purpose of this study is to confirm whether there is a factor to affect the evaluation of fit test of a 2nd class half masks using a OPC test method. Methods: Total 34 adults including Males and Females were tested using OPC-based fit testing equipment while wearing a 2nd class half filtered mask. Results: 1. The result of measuring face dimensions using different tools such as a 3D scanner and digital calipers revealed that the variation of lip width was not statistically significant because there was only a difference of about 4 mm. However, it showed that a difference in face length was statistically significant enough with 10 mm(p<0.000). 2. The fit factor for each exercise stage according to gender was the highest at 124.54(p<0.001) in Step 3, and the fit factor was the lowest at 73.75 in Step 1. 3. In the evaluation of the degree of fit factor according to gender, female passed 67.44%, which was higher than the value in male(p<0.038). 4. The acceptance rate of the group having a face length of shorter than 110 mm was 91.67%. On the other hand, the acceptance rate of the group with a face length of longer than 110 mm was 47.27%(p<0.000). 5. The fit test was possible because the fit factor with 2nd class half masks corresponding to FFP1(Filtering Face Piece 1) was passed 55% or more. Conclusions: The test results showed that using a 2nd class half filtered mask, it is important to wear a properly designed mask so that face size does not affect the fit factor.

• Journal of Environmental Health Sciences
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• v.30 no.5 s.81
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• pp.432-439
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• 2004

Korean certification regulation for particulate filtering respirators requires inward leakage (IL) test as European Standards (EN) and the standard levels of regulation are the same as those of EN. This study was conducted to evaluate particulate filtering respirators being commercially used in the market by using IL and assess the characteristics of IL. The study began with discussing the concept of IL, comparison of IL with fit test, and IL measurement method. Three brands of half masks and 10 brands of filtering facepieces (two top class, four 1st class and four 2nd class), total 13 brands respirators, and 10 test panels (subjects) who were classified in 9 facial grids in accordance with face length and lip length, were selected for IL test. IL tests were conducted in the laboratory of 3M Innovation Center which was established by EN standard. As expected ILs of half masks were lower than those of filtering facepiece mask. ILs of half masks and some filtering facepieces were significantly different in manufacturers. ILs of 1st class filtering facepieces were found to be much more than those of 2nd class and thus the result would cause wearers to get confused to select a mask. Four of six brands being no compliance with standards were thought that they should be tested again for certification because of a lot of differences from standards. There were no significant differences among ILs of five exercises. In 6 out of 13 brands lognormal distribution of ILs may be a better fit distribution and in 7 brands both lognormal and normal distributions were rejected. The result indicates that geometric mean may be better than arithmetic mean to establish standard.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.