• 제목/요약/키워드: Half bridge driver

검색결과 25건 처리시간 0.03초

LLC 공진형 하프브릿지 컨버터의 동기정류기 구동회로에 관한 연구 (A Study on the Synchronous Rectifier Driver Circuits in the LLC Resonant Half-Bridge Converter)

  • 안태영;임범선
    • 조명전기설비학회논문지
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    • 제30권1호
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    • pp.79-86
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    • 2016
  • In this paper, we propose a current-driven synchronous rectifier driver circuit for LLC resonant half-bridge converters. The proposed driver circuit detects a relatively low current in the primary side of the transformer although a large current is flowing in the secondary side. Due to this feature, the driver circuit has a simple circuit structure and stabilizes the switching operation with a logic-level switching voltages for the synchronous rectifier. The operation and performance of the proposed driver circuit are confirmed with a prototype of 1kW class LLC resonant half-bridge converter. The experimental results proved that the proposed synchronous rectifier driver method improves the power conversion efficiency by around 1% and reduces the internal power loss by 17W.

공정 및 공급전압 변화에 강인한 하프브리지 구동 IC의 설계 (Design of a Robust Half-bridge Driver IC to a Variation of Process and Power Supply)

  • 송기남;김형우;김기현;서길수;장경운;한석붕
    • 한국전기전자재료학회논문지
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    • 제22권10호
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    • pp.801-807
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    • 2009
  • In this paper, we propose a novel shoot-through protection circuit and pulse generator for half-bridge driver IC. We designed a robust half-bridge driver IC over a variation of processes and power supplies. The proposed circuit is composed a delay circuit using a beta-multiplier reference. The proposed circuit has a lower variation rate of dead time and pulse-width over variation of processes and supply voltages than the conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also, the proposed pulse generator is prevented from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, respectively. The variation ratio is 68%(170 ns) of maximum over variation of processes and supply voltages. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD (Bipolar, CMOS, DMOS) process parameter, and the simulations are carried out using Spectre simulator of Cadence corporation.

Design of Bootstrap Power Supply for Half-Bridge Circuits using Snubber Energy Regeneration

  • Chung, Se-Kyo;Lim, Jung-Gyu
    • Journal of Power Electronics
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    • 제7권4호
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    • pp.294-300
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    • 2007
  • This paper deals with a design of a bootstrap power supply using snubber energy regeneration, which is used to power a high-side gate driver of a half-bridge circuit. In the proposed circuit, the energy stored in the low-side snubber capacitor is transferred to the high-side bootstrap capacitor without any magnetic components. Thus, the power dissipation in the RCD snubber can be effectively reduced. The operation principle and design method of the proposed circuit are presented. The experimental results are also provided to show the validity of the proposed circuit.

A Study of a Simple PDP Driver Architecture using the Transformer Network

  • Kim, Woo-Sup;Shin, Jong-Won;Chae, Su-Yong;Hyun, Byung-Chul;Cho, Bo-Hyung
    • Journal of Power Electronics
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    • 제8권2호
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    • pp.148-155
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    • 2008
  • In this paper, a cost-effective PDP driving circuit using the transformer network is proposed. Compared with the previous works, the half-bridge type energy recovery circuit recovers the reactive energy not to the capacitor but to the source. A single sustain board architecture removes the blocking switches which are placed on the discharge path in parallel, thus reducing the number of devices. A simple reset circuit generates the same waveforms as the previous approaches. The circuit configuration and modified driving waveforms are compared with the previous works. The validity of the proposed simplified driver is verified through tests using a 6-inch panel.

GaN HEMT를 사용한 Half-Bridge 구조에서의 스위치 상호작용에 의한 게이트 전압분석 (An Analysis for Gate-source Voltage of GaN HEMT Focused on Mutual Switch Effect in Half-Bridge Structure)

  • 채훈규;김동희;김민중;이병국
    • 전기학회논문지
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    • 제65권10호
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    • pp.1664-1671
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    • 2016
  • This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

넓은 영전압 스위칭 범위를 갖는 새로운 고효율 DC/DC 컨버터 (A New High Efficiency DC/DC Converter with Wide ZVS Range)

  • 박기범;김정은;문건우;윤명중
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2004년도 전력전자학술대회 논문집(1)
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    • pp.364-368
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    • 2004
  • A new high efficiency DC/DC converter is proposed, which is derived from the conventional half-bridge converter. The proposed converter has good ZVS condition compared with the conventional half-bridge converter, and shows a high efficiency by solving the unbalance voltage stress and current stress problem of secondary rectifier diode of the conventional half-bridge converter. In this paper, the basic operations of the proposed converter is analyzed compared with that of the conventional half-bridge converter, and the excellent performance of the proposed converter is verified by the experimental results with the 42W prototype of the power supply for PDP Sustain Driver.

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LCD/PDP TV 전원장치용 고전압 구동 IC (High Voltage Driver IC for LCD/PDP TV Power Supply)

  • 송기남;이용안;김형우;김기현;서길수;한석붕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.11-12
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    • 2009
  • In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

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LED 조명장치 구동용 200[W]급 하프브리지 LLC 직렬공진형 컨버터 (200[W] Half-Bridge LLC Series Resonant Converter for driving LED Lamp)

  • 한우용;박효식
    • 한국산학기술학회논문지
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    • 제11권11호
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    • pp.4483-4488
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    • 2010
  • LED는 다른 광원에 비해 동작수명이 길고, 친환경적이며, 에너지 효율이 높은 장점을 가지고 있다. 최근 LED 기술의 발전으로 인해 고휘도, 고용량의 LED가 개발됨에 따라, 표시장치에만 적용되던 LED를 조명장치에도 적용하는 기술이 확산되고 있다. 파워 LED는 동작의 안정성 및 신뢰성을 확보하기 위해 구동전류를 일정한 값 이하로 유지하는 전류제한기능이 필요한데, 본 논문에서는 전류제한기능을 포함한 하프브리지 LLC 직렬공진형 컨버터를 제안한다. 하프브리지 LLC 직렬공진형 컨버터는 다른 공진형 컨버터에 비해 상대적으로 입력전압 및 출력부하 범위가 광범위한 장점이 있으며, 변압기의 누설인덕턴스를 공진인덕터로 이용할 수 있기 때문에 마그네틱 소자를 줄일 수 있는 장점이 있다. 전류제한기능 및 역률개선기능을 포함하고 있는 출력전압 DC24[V], 200[W]급의 LED 조명장치 구동용 하프브리지 LLC 직렬공진형 컨버터의 설계 및 실험을 통해 타당성을 입증하였다.

잡음 내성이 큰 단일 출력 레벨 쉬프터를 이용한 500 V 하프브리지 컨버터용 구동 IC 설계 (Design of the Driver IC for 500 V Half-bridge Converter using Single Ended Level Shifter with Large Noise Immunity)

  • 박현일;송기남;이용안;김형우;김기현;서길수;한석봉
    • 한국전기전자재료학회논문지
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    • 제21권8호
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    • pp.719-726
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    • 2008
  • In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

넓은 범위의 ZVS동작을 갖는 LCD Backlight 구동용 Dual Half Bridge Inverter (Zero Voltage Switching(ZVS) Dual Half-Bridge Inverter with Wide Input Voltage Range for LCD Backlight Driver)

  • 정영진;한상규;노정욱;홍성수;사공석진;권기현;이효범
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2007년도 하계학술대회 논문집
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    • pp.144-146
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    • 2007
  • 본 논문에서는 고효율 LCD Backlight 구동을 위해 주로 사용하던 Phase shift Full bridge 방식을 대신할 수 있는 Dual Half Bridge Inverter를 제안하였다. 제안된 회로는 일반적인 Push-Pull 인버터 구동용 제어 IC의 출력 신호 2개로 스위치 4개를 제어할 수 있으며 넓은 범위의 ZVS(zero voltage switching)을 보장하여 소자 발열 및 효율 상승의 이점을 가진다. 제안된 Inverter Topology를 소개하며 동작모드 해석과 시뮬레이션 및 실험을 통한 검증결과를 제시 한다.

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