• 전기학회논문지P
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• 제58권4호
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• pp.535-537
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• 2009

As a kind of high Tc superconductor application technique, a study on the development of energy storage device system using BiPbSrCaCuO superconductor was performed. Chemical melt process was developed to gabricate the high magnetization superconductor which is needed to develop the energy saving system and the effect of various process variable on the superconducting properties of the specimens were tested and analyzed. Magnetochemical interactions between superconductor and permanent magnet was also experimented.

• 한국초전도저온공학회지:초전도와저온공학
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• 제5권1호
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• pp.10-17
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• 2003

For limitation and interruption of short circuit currents from low voltage to extra high voltage applications, the electrical equipment including fuses and circuit breakers, are widely used today. But in order to anticipate increasing needs for effective and competitive device for limiting the growing fault current in electrical power systems, fault current limitation technologies and fault current limitation devices are widely introduced and investigated in these days. Furthermore, the applications of high temperature superconducting materials (HTSC) into the current limiting devices are new approach for developing of novel and effective col-rent limitation electrical equipment. In this research, the necessities of current limitation technology and the developed and developing current limitation devices for power systems are introduced. Finally, the investigation of resistive type fault current limiters which is under development by LG and KEPCO were introduced.

• Progress in Superconductivity
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• 제2권2호
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• pp.57-64
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• 2001

We have calculated the tunneling density of states (TDOS) of a metal/d-wave superconductor proximity junction, where the metal stands fur the normal metal, 5-wave superconductor, and d-wave superconductor. The tunneling direction is through the ab-plane of the d-wave superconductor. Because of the sign change in the order parameter experienced in the multiple Andreev reflection, there appears a finite TDOS at zero bias for duty geometry, which results in the anomalous zero bias conductance peak(ZBCP). For $d_{x2-y2}$ geometry, however, no TDOS peak appears at zero bias. We have calculated TDOS for various crystal orientation of HTSC and compared with the experimental conductance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.276-277
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• 2005

본 연구에서는 MCP법을 이용하여 Bi2212 초전도 튜브를 제작하고 공정 변수에 따른 초전도 튜브의 전기적 특성을 평가하였다. 초전도 분말은 $1100^{\circ}C$에서 용융하여 $300\sim500^{\circ}C$로 예열된 몰드 내에 주입하였으며 몰드는 1000 RPM으로 회전시켰다 제작된 초전도 튜브는 $840^{\circ}C$ 의 $O_2$ 분위기에서 72시간 열처리 하였다. SEM과 XRD 분석결과 튜브는 약 $40{\mu}m$의 크기를 갖는 Bi2212 초전도 상이 일정한 방향성을 갖으며 XRD 분석 결과 튜브 바깥부문에 Bi2201상이 존재하였다. 전기적 특성은 몰드 회전 속도가 증가할수록, 튜브의 두께가 증가할수록, 길이가 감소할수록 높은 $I_c$ 값을 나타내었으며, 이때 50 mm$\times$70 mm$\times$2.5 mm, 1000 RPM의 튜브에서 전기적 특성은 $I_c$=890 A, $T_c$= 80 K의 값을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.193-197
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• 2005

We investigated fault current limiting characteristics of the flux-lock type superconducting fault current limiter (SFCL), which consisted of a primary winding and several secondary windings connected in series between $high-T_C$ superconducting (HTSC) thin films. Each YBCO thin film has a 2 mm wide and 42 cm long meander line with 14 stripes of different length. The power imbalance due to the slight difference of Ie between YBCO current limiting elements causes the significant power burden on YBCO element with lower $I_C$. We confirmed from our experiments that the mutual coupling between the primary winding and secondary windings of the flux-lock type SFCL reduced the power imbalance between YBCO current limiting elements compared with the resistive type SFCL connected in series.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.239-242
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• 2000

To fabricate YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process, $Y_2$BaCuO$_{5}$ and BaO+CuO as the material of substrate and the doping material were selected. CeO$_2$ in the doping material was mixed. As another doping material, YBa$_2$Cu$_3$O$_{x}$ was prepared for the comparison with BaO+CuO doping material. Each doping material was patterned on $Y_2$BaCuO$_{5}$ substrate by the screen printing method and then was annealed above peritectic reaction temperature of YBCO with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2$BaCuO$_{5}$ and BaO+CuO, the YBa$_2$Cu$_3$O$_{x}$ phase was formed. With an amout of addition of CeO$_2$, the thickness of a formed YBa$_2$Cu$_3$O$_{x}$ decreased. x/ decreased.

• E2M - 전기 전자와 첨단 소재
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• 제9권1호
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• pp.18-23
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• 1996

The molding pressure is also one of the important parameters in the preparation of HTSC materials by the solid state reaction method. In the present study, changes in structural, electrical and microstructural proper-ties with the molding pressure in YiB $a_{2}$C $u_{3}$ $O_{70{\delta}}$ superconductors have been performed. The investigated molding pressures were 0.5*10$^{3}$ N/c $m^{2}$, 1*10$^{3}$ N/c $m^{2}$, 2*10$^{3}$ n/c $m^{2}$ and 4*10$^{3}$ N/c $m^{2}$. As the molding pressure increased, the anisotropy of the crystal structure decreased and the grains have been grown preferentially in a c-axis direction. Since the size of the grain becomes larger with the decrease of the porosity, denser textures are formed. The results indicated that the critical current density is improved resulting from the enhanced densification due to higher molding pressure. When the molding pressure was between 1*10$^{3}$ N/c $m^{2}$ and 2*10$^{3}$ N/c $m^{2}$, while it did not affect the oxygen deficiency and Tc, the increase of the molding pressure affects remarkably on grain size and densification of the $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-{\delta}}$. When the molding pressure is larger than 2*10$^{3}$ N/c $m^{2}$, electrical proper-ties are independent on the molding pressure..