Tunneling Density of States in Superconductor/d-wave Superconductor Proximity Junction

초전도체와 d-wave 초전도체 근접효과 접합에서의 터널링 상태밀도함수

  • Lee, H. J. (LG Electronics Institute of Technology) ;
  • Yonuk Chong (Center for Strongly Correlated Materials Research, Seoul National University) ;
  • J. I. Kye (LG Electronics Institute of Technology) ;
  • Lee, S. Y. (School of Physics and Condensed Matter Research Institute, Seoul National University) ;
  • Z.G. Khim (School of Physics and Condensed Matter Research Institute, Seoul National University)
  • Published : 2001.01.01

Abstract

We have calculated the tunneling density of states (TDOS) of a metal/d-wave superconductor proximity junction, where the metal stands fur the normal metal, 5-wave superconductor, and d-wave superconductor. The tunneling direction is through the ab-plane of the d-wave superconductor. Because of the sign change in the order parameter experienced in the multiple Andreev reflection, there appears a finite TDOS at zero bias for duty geometry, which results in the anomalous zero bias conductance peak(ZBCP). For $d_{x2-y2}$ geometry, however, no TDOS peak appears at zero bias. We have calculated TDOS for various crystal orientation of HTSC and compared with the experimental conductance.

Keywords