• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.237-244
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• 1998

In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. Using high resolution electron microscopy(HRTEM), Physical defects were investigated on the silicon trench surfaces etched in both 90%$CI_2$/ 10%$N_2$ and 50%$CI_2$/50%HBr. Among the areas in the tench such as trench bottom, bottom edge, and sidewall, the most dense defects were found near the trench bottom edge, and the least dense defects were found near the trench bottom edge, and least dense defects compared to that etched with ment as well as hydrogen permeation. Thermal oxidation of 200$\AA$ atthe temperature up to $1100^{\circ}C$apprars not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the physicall defects, an annealing treatment at the temperature high than $1000^{\circ}C$ in N for30minutes was required. Electrical defects measured using a capacitance-voltage technique showed the reduction of the defects with increasing annealing temperature, and the trends were similar to the results on the physical defects obtained using transmission electron microscopy.

• Bulletin of the Korean Chemical Society
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• v.29 no.9
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• pp.1729-1731
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• 2008

Colloidal solutions of crystalline PbSe nanoparticles have been synthesized by hot solution chemical process using PbO in oleic acid and tributylphosphine (TBP) bonded selenium. The use of TBP as a capping agent along with oleic acid gives a very good yield (around 10% at 180 ${^{\circ}C}$) with an average diameter of particle of about < 6.6 nm. The effects of temperature on size and production yield of PbSe quantum dots are studied. Xray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and UV/VIS/NIR absorption spectroscopy were used to characterize the samples.

• Korean Journal of Crystallography
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• v.7 no.2
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• pp.156-164
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• 1996

The atomic configurations of GaAs ∑19, {331}/{331} [110] and ∑3 {111}/{111} [110] tilt grain boundaries were investigated by HRTEM (High-resolution Transmission Electron Microscopy). The boundary planes lie parallel to the crystallographic planes with high number density of coincident lattice sites for given misorientations, exhibiting particular atomic structural units. Secondary boundary dislocations with a core diameter of about 2nm were observed at boundary steps when a slight deviation from exact ∑-related misorientations occurs in the bicrystal system. The relation between the secondary boundary dislocation and the boundary step was discussed based on a DSC lattice model.

• Applied Microscopy
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• v.25 no.2
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• pp.65-72
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• 1995

The interfacial structures of ZnSe/GaAs which were grown by single chamber MBE at $300^{\circ}C$ were investigated by high resolution transmission electron microscope working at 300 kV with resolution of 0.18 nm. The interfaces of ZnSe/GaAs whose thickness is 2,700 nm are wavy and extensive stacking faults were formed in ZnSe epilayer but the interfaces maintained the coherency with the substrate GaAs. The stacking faults are formed in {111} planes and their sizes are $10{\sim}20nm$ in length and two or three atomic layer in width with the density of $10^9/cm^2$. Micortwins and moire fringes are also observed. However. in 10 nm ZnSe epilayer, the interfaces are pseudomorphic and only moire fringes are observed in local areas. The cylindrical defects which are perpendicular to the interface with $50{\sim}60nm$ in length, were observed with the interval of 50 nm at ZnSe/GaAs interfaces in 2,700nm epilayer. The origin and character of these defects are unknown, however, they played a role of producing the structural defects at the interfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.286-287
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• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.418-418
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• 2009

Vertically aligned arrays of multi-walled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). We studied changes in growth by parameters of growth temperature, growth time, rates of gas and annealing time of catalyst. Also, We grew CNTs by adding a little amount of water vapor to enhance the growth of CNTs. $H_2$, Ar, and $C_2H_2$ were used as carrier gas and feedstock, respectively. Before growth, Fe served as catalyst, underneath which AI were coated as an underlayer and a diffusion barrier, respectively, on the Si substrate. The water vapor had a greater effect on the growth of CNTs on a smaller thickness of catalyst. When the water vapor was introduced, the growth of CNTs was enhanced than without water. CNTs grew 1.29 mm for 10 min long by adding the water vapor, while CNTs were 0.73 mm long without water vapor for the same period of time. CNTs grew up to 1.97 mm for 30 min prior to growth termination under adding water vapor. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1270_1271
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• 2009

In this research, gallium-incorporated zinc oxide (ZnO:Ga) thin films have been used as a coating material for enhancing the field-emission property of CNT-emitters. Multi-walled CNTs were directly grown on conical-type ($250{\mu}m$ in diameter) metal-tip substrates at $700^{\circ}C$ by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The pulsed laser deposition (PLD) technique was used to produce 5wt% gallium-doped ZnO (5GZO) films with very low stress. The structural properties of ZnO and 5GZO coated CNTs were characterized by Raman spectroscopy. Field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM) were also used to monitor the variation in the morphology and microstructure of CNTs before and after 5GZO-coating. The measurement of the field emission characteristics showed that the emitter that coated the 5GZO (10nm) on CNTs exhibited the best performance: a maximum emission current of $325{\mu}A$, a threshold field of 2.2 V/${\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.206.1-206.1
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• 2014

최근 전자 장비의 금속 전도성 패턴 제작에 있어서 직접적인 프린트가 가능한 프린팅 기술이 기존의 복잡한 photolithography 를 대체할 기술로 주목 받고 있다. 이와 함께 금속 전도성 패턴 제작에 사용되는 고가의 전도성 물질인 Ag ink 및 paste 를 저가의 Cu ink 및 paste 로 대체하기 위한 연구가 진행되고 있다. 하지만 일반적으로 copper 는 대기 중 에서 쉽게 산화되어 높은 저항을 야기시킨다. 따라서 Cu ink 또는 paste 를 제작할 때 copper nanoparticles 을 유기 용매에 분산하여 inert atmosphere에서 합성하거나 [1] copper ink 또는 paste 를 substrate 에 프린트하여 reduction atmosphere 에서 소성시킨다 [2]. 이번 연구에서 Cu paste 를 유리 기판에 screen printing 하여 혼합가스(질소 95%, 수소 5%)와 질소 가스 분위기에서 소성하여 Cu 전극의 소성 거동과 전기적 특성을 분석하였다. 4-point probe를 통해 소성된 Cu 전극의 저항을 측정하여 전도도를 조사하였으며 Thermal Gravimetric Analysis (TGA), Fourier Transform Infrared(FTIR)를 통해 소성된 Cu 전극의 유기물 분해가 전도도에 미치는 영향을 분석하고 Field Emission Scanning Electron Microscopy (FESEM)과 High Resolution Transmission Electron Microscopy (HRTEM)을 통해 Cu nanoparticles 의 grain growth가 전도도에 미치는 영향을 조사하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.701-706
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• 2006

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane $(CH_4)$ and hydrogen $(H_2)$ gas. We examined the effects of the post annealing temperature on the structural variation of the DLC films. The films were annealed at temperatures ranging from 300 to $900^{\circ}C$ in steps of $200^{\circ}C$ using RTA equipment in nitrogen ambient. The thickness of the film and interface between film and substrate were observed by surface profiler, field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), respectively. Raman and X-ray photoelectron spectroscopy (XPS) analysis showed that DLC films were graphitized ($I_D/I_G$, G-peak position and $sp^2/sp^3$ increased) ratio at higher annealing temperature. The variation of surface as a function of annealing treatment was verified by a AFM and contact angle method.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.99-106
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• 2013

Polyaniline-yttrium trioxide (PAni-$Y_2O_3$) composites were synthesized by the in-situ polymerization of aniline in the presence of $Y_2O_3$ The composite formation and structural changes in these composites were investigated by X-ray diffraction (XRD), Fourier transform infra red spectroscopy (FTIR), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The direct current (DC) electrical conductivity of the order of $0.51{\times}10^{-2}\;S\;cm^{-1}-0.283\;S\;cm^{-1}$ in the temperature range 300 K-473 K indicates semiconducting behavior of the composites. Room temperature AC conductivity and dielectric response of the composites were studied in the frequency range of 10 Hz to 1 MHz. The variation of AC conductivity with frequency obeyed the power law, which decreased with increasing weight percentage (wt %) of $Y_2O_3$. Studies on dielectric properties shows the relaxation contribution coupled by electrode polarization effect. The dielectric constant and dielectric loss in these composites depend on the content of $Y_2O_3$ with a percolation threshold at 20 wt % of $Y_2O_3$ in PAni. Electromagnetic interference shielding effectiveness (EMI SE) of the composites in the frequency range 100 Hz to 2 GHz was in the practically useful range of -12.2 dB to -17.2 dB. The observed electrical and shielding properties were attributed to the interaction of $Y_2O_3$ particles with the PAni molecular chains.