• Atmosphere
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• v.17 no.4
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• pp.339-348
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• 2007

Global Environment Laboratory at Yonsei University in Seoul ($37.57^{\circ}N$, $126.95^{\circ}E$) has carried out the ozone layer monitoring program in the framework of the Global Ozone Observing System of the World Meteorlogical Organization (WMO/GAW/GO3OS Station No. 252) since May of 1984. The daily measurements of total ozone and the vertical distribution of ozone amount have been made with the Dobson Spectrophotometer (No.124) on the roof of the Science Building on Yonsei campus. From 2004 through 2006, major parts of the manual operations are automated in measuring total ozone amount and vertical ozone profile through Umkehr method, and calibrating instrument by standard lamp tests with new hardware and software including step motor, rotary encoder, controller, and visual display. This system takes full advantage of Windows interface and information technology to realize adaptability to the latest Windows PC and flexible data processing system. This automatic system also utilizes card slot of desktop personal computer to control various types of boards in the driving unit for operating Dobson spectrophotometer and testing devices. Thus, by automating most of the manual work both in instrument operation and in data processing, subjective human errors and individual differences are eliminated. It is therefore found that the ozone data quality has been distinctly upgraded after automation of the Dobson instrument.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.668-672
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.8
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• pp.59-63
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• 2015

This paper discusses the capacitance-voltage method in Metal-Oxide-Nitride-Oxide-Silicon (MONOS) devices to analyzed the characteristics of the top oxide/nitride, nitride/bottom oxide interface trap distribution. In the CV method, nitride trap density can be calculated based on the program characteristics of the nitride thickness variations. By applying this method, silicon rich nitride device found to have a larger trap density than stoichiometric nitride device. This result is consistent with previous studies. If this comparison analysis can be expected to result in improved reliability of the SONOS flash memory.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1450-1452
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• 1996

In order to optimize the characteristics of gate insulator for FED(field emission device), we investigated the effect of wet-etching process on the gate insulator for fabrication of FED. We used the general three types of etchants for fabrication of the metal tip FEA(field emitter array), they are MO and oxide etchants to form the gate hole, and Al etchant to remove the release layer. In the result of the breakdown field of the insulator by the measure of the current-voltage characteristics, the breakdown field of insulator for immersing in oxide etchant was rapidly lowering with increasing etching time, but that for immersing in Al etchant was slow lowering. Also, in comparing cleaning with non-cleaning samples, the breakdown field of the cleaning samples was higher than that of non-cleaning samples.

• Journal of Biosystems Engineering
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• v.31 no.5 s.118
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• pp.436-442
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• 2006

This research was conducted to design and develop a wired monitoring system for judging if sick or dead layers (SDL) exist in multi-tier layers battery (MLB) by machine vision, and to analyze its performance. In this study, 20 Brown Leghorn (Hi-Brown) layers aged 37 weeks old, were used as the experimental animals. The intensity of concern paid by layers on feed was over 90% during 5 minutes and 30 seconds after providing feed, and normal layers (NL) had been standing to take feed for that period. Therefore, in this study, the optimal judging time was set by this test result. The wired monitoring system developed was consisted of a driving device for carrying machine vision systems, a control program, a RS232 to RS485 convertor, an automatic positioning system, and an image capture system. An image processing algorithm was developed to find SDL in MLB by the processes of binary processing, erosion, expansion, labeling, and reckoning central coordinate of the captured images. The optimal velocity for driving unit was set up as 0.13 m/s by the test results for wired monitoring system, and the proximity switch was controlled not to be operated for 1.0 second after first image captured. The wired monitoring system developed was tested to evaluate the remote monitoring performance at lab-scale laying hen house. Results showed that its judgement success.ate on normal cage (without SDL) was 87% and that on abnormal cage (with SDL) was 90%, respectively. Therefore, it would be concluded that the wired monitoring system developed in this study was well suited to the purpose of this study.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.89-89
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• 2010

The atomic structure of Sb/Si(5 5 12)-$2{\times}1$ surface, deposited at room temperature (RT) and post-annealed, has been identified by scanning tunneling microscopy and the corresponding interface has been studied by synchrotron core-level photoemission spectroscopy. With 0.3-nm Sb deposition at RT and postannealing at $600^{\circ}C$, the surface has been facetted to (225)-$2{\times}1$ and (112)-$1{\times}1$, and its Si 2p has shown that all the Si 2p surface components have disappeared, while the single Sb-Si interfacial component has appeared. Such results indicate that all of surface Si atoms are replaced by Sb atoms and the charge is transferred from Si to passivating Sb-atoms at the top layer. With subsequent postannealing up to $700^{\circ}C$, the surface has been facetted to (113)-$2{\times}2$ and (335)-$4{\times}2$, still having Sb-Si interfacial component and partially re-exposed Si surface components. From the present study, the role of surfactant atom, Sb, as well as the thermal-stabilization of Sb-passivated high-index Si surface will be exposed. Especially, the key role of the Sb/Si(113)-$2{\times}2$, composed of Rebonded-Dimer-Rebonded atom 1D structures, for stabilization will be discussed.

• Membrane Journal
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• v.20 no.3
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• pp.210-216
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• 2010

The hydrogen permselective membrane were prepared by chemical vapor deposition (CVD) aiming at the applications to hydrogen iodide decomposition in the thermochemical IS process, and it was evaluated for the possibility as a separation membrane. An electron probe X-ray microanalyzer (EPMA) and SEM picture were used to analyze the morphology and structure of the prepared membranes. It was confirmed that Zr-Si-O layer exist in the surface of the prepared membrane using zirconia coated support. Single-component permeance to $H_2$ and $N_2$ were measured at $300{\sim}600^{\circ}C$. Hydrogen permeance through the Z-1 membrane at a permeation temperature of $600^{\circ}C$ was about $1{\times}10^{-7}\;mol{\cdot}Pa^{-1}{\cdot}m^{-2}{\cdot}s^{-1}$. The selectivities of $H_2/N_2$ at $600^{\circ}C$ were 5.0 and 5.75 for Z-1 and Z-2 membrane, respectively.

• 한국해양학회지
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• v.13 no.2
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• pp.17-25
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• 1978

General water quality parameters were measured, as a base-line study, for possible water pollution problems in the coastal waters of some important harbors and near-sea industrial complexes all around coastal zones of Korea from June 1 to October 15, 1977. The areas surveyed were near Mugho-Samcheog, Ulsan, Jinhae-Masan, Yeosu-Gwangyang, Mogpo, Gunsan and Incheon. Among the surveyed coastal areas, the Ulsan and the Jinhae-Masan areas showed high levels of dissolved oxygen, pH, COD and nutrients. Particularly, the surface waters of the Ulsan inner bay represented COD 15.6mg/l and NO$\sub$2/-N 110$\mu\textrm{g}$/l. The surface layer of the Masan bay displayed pH 8.92 and NO$\sub$3/-N 372$\mu\textrm{g}$/l, while 309$\mu\textrm{g}$/l of PO$\sub$4/-P was recorded in the surface of the Haengam bay. In general it is shown that some coastal areas are presenting signs of pollution from man's activities.

• Economic and Environmental Geology
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• v.25 no.3
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• pp.275-282
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• 1992

Mineral chemistry and stable isotope compositions of sericites from the Sangdong mine in the Kimhae area, Kyungsangnamdo, were studied. The Sangdong sericite deposit occurs in rhyolitic tuff of late Cretaceous age and considers to have been fonned by the hydrothennal alteration. The sericites are classified as $2M_1$ polytype and are characterized by less celadonite substitution indicating muscovite-phengite series. Their compositions are very close to that of the ideal muscovite but net layer charge ranges 1.71~1.91 which is less than 2 per formula unit of ideal muscovite. Predominant interlayer cation is K and K/(K+Na) ratio ranges 0.91 and 0.93. ${\delta}^{18}O$ values of sericites and quartz separated from the ore range 7.70~9.07 and 8.20~10.87‰, respectively. The formation temperature of sericite can be estimated as $315{\sim}340^{\circ}C$( based on ${\delta}^{18}O$ value of sericite and ${\delta}D$ value of of Cretaceous meteoric water. Their formation temperature discrepancy between coexisting sericite and quartz indicates that they are in isotopically inequilibrium. Two types of quartz, coarse grained phenocrysts and micrcrystalline aggregates are observed and the former must have been formed during volcanic eruption and remained isotopically unexchanged during hydrothermal alteration period. ${\delta}^{14}S$ values of pyrites range 1.9~4.5‰ which is within a range of volcanogenic sulfur, indicating magmatic source.