• Title/Summary/Keyword: HF2V

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Low-temperature solution-processed aluminum oxide layers for resistance random access memory on a flexible substrate

  • Sin, Jung-Won;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.257-257
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    • 2016
  • 최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.

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Co-Deposition법을 이용한 Yb Silicide/Si Contact 및 특성 향상에 관한 연구

  • Gang, Jun-Gu;Na, Se-Gwon;Choe, Ju-Yun;Lee, Seok-Hui;Kim, Hyeong-Seop;Lee, Hu-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.438-439
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    • 2013
  • Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

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Characterization of thermally driven polysilicon micro actuator (폴리실리콘 마이크로 액츄에이터의 열구동 특성분석)

  • Lee, Chang-Seung;Lee, Jae-Youl;Chung, Hoi-Hwan;Lee, Jong-Hyun;Yoo, Hyung-Joun
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.2004-2006
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    • 1996
  • A thermally driven polysilicon micro actuator has been fabricated using surface micromachining techniques. It consists of P-doped polysilicon as a structural layer and TEOS (tetracthylorthosilicate) as a sacrificial layer. The polysilicon was annealed for the relaxation of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE (vapor phase etching) process was also used as an effective release method for the elimination of sacrificial TEOS layer. The thickneas of polysilicon is $2{\mu}m$ and the lengths of active and passive polysilicon cantilevers are $500{\mu}m$ and $260{\mu}m$, respectively. The actuation is incurred by die thermal expansion due to the current flow in the active polysilicon cantilever, which motion is amplified by lever mechanism. The moving distance of polysilicon micro actuator was experimentally conformed as large as $21{\mu}m$ at the input voltage level of 10V and 50Hz square wave. The actuating characteristics are investigated by simulating the phenomena of heat transfer and thermal expansion in the polysilicon layer. The displacement of actuator is analyzed to be proportional to the square of input voltage. These micro actuator technology can be utilized for the fabrication of MEMS (microelectromechanical system) such as micro relay, which requires large displacement or contact force but relatively slow response.

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W/TiN 금속 게이트 MOS 소자의 물리.전기적 특성 분석

  • 윤선필;노관종;노용한
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.123-123
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    • 2000
  • 선폭이 초미세화됨에 따라 게이트 전극에서의 공핍 현상 및 불순물 확산의 물제를 갖는 poly-Si 게이트를 대체할 전극 물질로 텅스텐(W)이 많이 연구되어 왔다. 반도체 소자의 배선물질로 일찍부터 사용되어온 텅스텐은 내화성 금속의 일종으로 용융점이 높고, 저항이 낮다. 그러나, 일반적으로 사용되고 있는 CVD에 의한 텅스텐의 증착은 반응가스(WF6)로부터 오는 불소(F)의 게이트 산화막내로의 확산으로 인해 MOS 소자가 크게 열화될수 있다. 본 연구에서는 W/TiN 이중 게이트 전극 구조를 갖는 MOS 캐패시터를 제작하여 전기적 특성을 살펴보았다. P-Type (100) Si위에 RTP를 이용, 85$0^{\circ}C$에서 110 의 열산화막을 성장 및 POA를 수행한 후, 반응성 스퍼터링법에 의해 상온, 6mTorr, N2/Ar=1/6 sccm, 100W 조건에서 TiN 박막을 150, 300, 500 의 3그룹으로 증착하였다. 그 위에 LPCVD 방법으로 35$0^{\circ}C$, 0.7Torr, WF6/SiH4/H2=5/5~10/500sccm 조건에서 2000~3000 의 텅스텐을 증착하였다. Photolithography 공정 및 습식 에칭을 통해 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ 크기의 W/TiN 복층 게이트 MOSC를 제작하였다. W/TiN 복측 게이트 소자와 비교분석하기 위해 같은 조건의 산화막을 이용한 알루미늄(Al) 게이트, 텅스텐 게이트 MOSC를 제작하였다. 35$0^{\circ}C$에서 증착된 텅스텐 박막은 10~11$\Omega$/ 의 면저항을 가졌고 미소한 W(110) peak값을 나타내는 것으로 보아 비정질 상태에 가까웠다. TiN 박막의 경우 120~130$\Omega$/ 의 면저항을 가졌고 TiN (200)의 peak 값이 크게 나타난 반면, TiN(111) peak가 미소하게 나타났다. TiN 박막의 두께와 WF/SiH4의 가스비를 변화시켜가며 제작된 MOS 캐패시터를 HF 및 QS C-V, I-V 그리고 FNT를 통한 전자주입 방법을 이용하여 TiN 박막의 불소에 대한 확산 방지막 역할을 살펴 보았다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. TiN 박막이 300 , 500 이고 WF6/SiH4의 가스비가 5:10인 경우 소자 특성이 우수하였으나, 5:5의 경우에는 FNT 전자주입 특성이 열화되기 시작하였다. 그리고, TiN박막의 두께가 150 으로 얇아질 경우에는 WF6/SiH4의 가스비가 5:10인 경우에서도 소자 특성이 열화되기 시작하였다. W/TiN 복층 게이트 MOS 캐패시터를 제작하여 전기적인 특성 분석결과, 순수 텅스텐 게이트 소자의 큰 저전계 누설 전류 특성을 해결할 수 있었으며, 불소확산에 영향을 주는 조건이 WF6/SiH4의 가스비에 크게 의존됨을 알 수 있었다. TiN 박막의 증착 공정이 최적화 될 경우, 0.1$\mu\textrm{m}$이하의 초미세소자용 게이트 전극으로서 텅스텐의 사용이 가능할 것으로 보여진다.

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Occurrence and Chemical Composition of Dolomite and Chlorite from Xiquegou Pb-Zn Deposit, China (중국 Xiquegou 연-아연 광상의 돌로마이트와 녹니석 산상과 화학조성)

  • Yoo, Bong Chul
    • Korean Journal of Mineralogy and Petrology
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    • v.35 no.2
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    • pp.125-140
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    • 2022
  • The Xiquegou Pb-Zn deposit is located at the Qingchengzi orefield which is one of the largest Pb-Zn mineralized zone in the northeast of China. The geology of this deposit consists of Archean granulite, Paleoproterozoinc migmatitic granite, Paleo-Mesoproterozoic sodic granite, Paleoproterozoic Liaohe group, Mesozoic diorite and Mesozoic monzoritic granite. The Xiquegou deposit which is a Triassic magma-hydrothermal type deposit occurs as vein ore filled fractures along fault zone in unit 3 (dolomitic marble and schist) of Dashiqiao formation of the Paleoproterozoic Liaohe group. Xiquegou Pb-Zn deposit consists of quartz, apatite, calcite, pyrite, arsenopyrite, pyrrhotite, marcasite, sphalerite, chalcopyrite, stannite, galena, tetrahedrite, electrum, argentite, native silver and pyrargyrite. Wallrock alteration of this deposit contains silicification, pyritization, dolomitization, chloritization and sericitization. Based on mineral petrography and paragenesis, dolomites from this deposit are classified two type (1. dolomite (D0) as wallrock, 2. dolomite (D1) as wallrock alteration in Pb-Zn mineralization quartz vein ore). The structural formulars of dolomites are determined to be Ca1.03-1.01Mg0.95-0.83Fe0.12-0.02Mn0.02-0.00(CO3)2(D0) and Ca1.16-1.00Mg0.79-0.44Fe0.53-0.13Mn0.03-0.00As0.01-0.00(CO3)2(D1), respectively. It means that dolomites from the Xiquegou deposit have higher content of trace elements compared to the theoretical composition of dolomite. The dolomite (D1) from quartz vein ore has higher content of these trace elements (FeO, PbO, Sb2O5 and As2O5) than dolomite (D0) from wallrock. Dolomites correspond to Ferroan dolomite (D0), and ankerite and Ferroan dolomite (D1), respectively. The structural formular of chlorite from quartz vein ore is (Mg1.65-1.08Fe2.94-2.50Mn0.01-0.00Zn0.01-0.00Ni0.01-0.00Cr0.02-0.00V0.01-0.00Hf0.01-0.00Pb0.01-0.00Cu0.01-0.00As0.03-0.00Ca0.02-0.01Al1.68-1.61)5.77-5.73(Si2.84-2.76Al1.24-1.16)4.00O10(OH)8. It indicated that chlorite of quartz vein ore is similar with theoretical chlorite and corresponds to Fe-rich chlorite. Compositional variations in chlorite from quartz vein ore are caused by mainly octahedral Fe2+ <-> Mg2+ (Mn2+) substitution and partly phengitic or Tschermark substitution (Al3+,VI+Al3+,IV <-> (Fe2+ 또는 Mg2+)VI+(Si4+)IV).

Potential Energy Surfaces for Ligand Exchange Reactions of Square Planar Diamagnetic PtY2L2 Complexes:Hydrogen Bond (PtY2L2···L') versus Apical (Y2L2Pt···L') Interaction

  • Park, Jong-Keun;Kim, Bong-Gon
    • Bulletin of the Korean Chemical Society
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    • v.27 no.9
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    • pp.1405-1417
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    • 2006
  • The geometrical structures, potential energy surfaces, and energetics for the ligand exchange reactions of tetracoordinated platinum $(PtY_2L_2\;:\;Y,\;L=Cl^-,\;OH^-,\;OH_2,\;NH_3)$ complexes in the ligand-solvent interaction systems were investigated using the ab initio Hartree-Fock (HF) and Density Functional Theory (DFT) methods. The potential energy surfaces for the ligand exchange reactions used for the conversions of $(PtCl_4\;+\;H_2O)^{^\ast_\ast}\;to\;[PtCl_3(H_2O)\;+\;Cl^-]$ and $[Pt(NH_3)_2Cl_2\;+\;H_2O]$$[Pt(NH_3)_2Cl_2\;+\;H_2O]$ to $[Pt(NH_3)_2Cl(H_2O)\;+\;Cl^-] $ were investigated in detail. For these two exchange reactions, the transition states $([PtY_2L_2{\cdot}{\cdot}{\cdot}L^\prime])^{^\ast_\ast} $ correspond to complexes such as $(PtCl_4{\cdot}{\cdot}{\cdot}H_2O)^{^\ast_\ast}$ and $[Pt(NH_3)_2Cl_2{\cdot}{\cdot}{\cdot}H_2O]^{^\ast_\ast}$, respectively. In the transition state, $([PtCl_4{\cdot}{\cdot}{\cdot}H_2O]^{^\ast_\ast}$ and $[Pt(NH_3)_2Cl_2{\cdot}{\cdot}{\cdot}H_2O]]^{^\ast_\ast})$ have a kind of 6-membered $(Pt-Cl{\cdot}{\cdot}{\cdot}HOH{\cdot}{\cdot}{\cdot}Cl)$ and $(Pt-OH{\cdot}{\cdot}{\cdot}Cl{\cdot}{\cdot}{\cdot}HN)$ interactions, respectively, wherein a central Pt(II) metal directly combines with a leaving $Cl^-$ and an entering $H_2O$. Simultaneously, the entering $H_2O$ interacts with a leaving $Cl^-$. No vertical one metal-ligand interactions $([PtY_2L_2{\cdot}{\cdot}{\cdot}L^\prime]) $ are found at the axial positions of the square planar $(PtY_2L_2)$ complexes, which were formed via a vertically associative mechanism leading to $D_{3h}$ or $C_{2v}$-transition state symmetry. The geometrical structure variations, molecular orbital variations (HOMO and LUMO), and relative stabilities for the ligand exchange processes are also examined quantitatively. Schematic diagrams for the dissociation reactions of {PtCl4(H2O)n(n=2,4)} into {$PtCl_3(H_2O)_{(n-2)}\;+\;Cl^-(H_2O)_2$} and the binding energies {$PtCl_4(H_2O)_n$(n = 1-5)} of $PtCl_4$ with water molecules are drawn.

Geochemical Characteristics of Soils and Sediments at the Narim Mine Drainage, Korea: Dispersion, Enrichment and Origin of Heavy Metals (나림광산 수계의 토양과 퇴적물에 관한 지구화학적 특성: 중금속 원소의 분산, 부화 및 기원)

  • Lee, Chan Hee;Lee, Hyun Koo;Lee, Jong Chang
    • Economic and Environmental Geology
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    • v.31 no.4
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    • pp.297-310
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    • 1998
  • Geochemical characteristics of environmental toxic elements at the Narim mine area were investigated on the basis of major, minor, rare earth element geochemistry and mineralogy. Ratios of $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ in soils and sediments range from 11.57 to 22.21 and from 1.86 to 3.93, and are partly negative and positive correlation against $SiO_2/Al_2O_3$ (3.41 to 4.78), respectively. These suggested that sediment source of host granitic gneiss could be due to rocks of high grade metamorphism originated by sedimentary rocks. Characteristics of some trace and rare earth elements of V/Ni (0.33 to 1.95), Ni/Co (2.00 to 6.50), Zr/Hf (11.27 to 53.10), La/Ce (0.44 to 0.55), Th/Yb (4.07 to 7.14), La/Th (2.35 to 3.93), $La_N/Yb_N$ (6.58 to 13.67), Co/Th (0.63 to 2.68), La/Sc (3.29 to 5.94) and Sc/Th (0.49 to 1.00) are revealed a narrow range and homogeneous compositions may be explained by simple source lithology. Major elements in all samples are enriched $Al_2O_3$, MgO, $TiO_2$ and LOI, especially $Fe_2O_3$ (mean=7.36 wt.%) in sediments than the composition of host granitic gneiss. The average enrichment indices of major and rare earth elements from the mining drainage are 2.05 and 2.91 of the sediments and are 2.02 and 2.60 of the soils, normalizing by composition of host granitic gneiss, respectively. Average composition (ppm) of minor and/or environmental toxic elements in sediments and soils are Ag=14 and 1, As=199 and 14, Cd=22 and 1, Cu=215 and 42, Pb=1770 and 65, Sb=18 and 3, Zn=3333 and 170, respectively, and extremely high concentrations are found in the subsurface sediments near the ore dump. Environmental toxic elements were strongly enriched in all samples, especially As, Cd, Cu, Pb, Sb and Zn. The level of enrichment was very severe in mining drainage sediments, while it was not so great in the soils. Based on the EPA value, enrichment index of toxic elements is 8.63 of mining drainage sediments and 0.54 of soils on the mining drainage. Mineral composition of soils and sediments near the mining area were partly variable being composed of quartz, mica, feldspar, amphibole, chlorite and clay minerals. From the gravity separated mineralogy, soils and sediments are composed of some pyrite, arsenopyrite, chalcopyrite, sphalerite, galena, goethite and various hydroxide minerals.

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Comparative Investigation on 4 types of Tunnel Field Effect Transistors(TFETs) (터널링 전계효과 트랜지스터 4종류 특성 비교)

  • Shim, Un-Seong;Ahn, TaeJun;Yu, YunSeop
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.5
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    • pp.869-875
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    • 2017
  • Using TCAD simulation, performances of tunnel field-effect transistors (TFETs) was investigated. Drain current-gate voltage types of TFET structure such as single-gate TFET (SG-TFET), double-gate TFET (DG-TFET), L-shaped TFET (L-TFET), and Pocket-TFET (P-TFET) are simulated, and then as dielectric constant of gate oxide and channel length are varied their subthreshold swing (SS) and on-current ($I_{on}$) are compared. On-currents and subthreshold swings of the L-TFET and P-TFET structures with high electric constant and line tunneling were 10 times and 20 mV/dec more than those of the SG-TFET and DG-TFET using point tunneling, respectively. Especially, it is shown that hump effect which dominant current element changes from point tunneling to line tunneling, is disappeared in P-TFET with high-k gate oxide such as $HfO_2$. The analysis of 4 types of TFET structure provides guidelines for the design of new types of TFET structure which concentrate on line tunneling by minimizing point tunneling.

저온 공정 온도에서 $Al_2O_3$ 게이트 절연물질을 사용한 InGaZnO thin film transistors

  • 우창호;안철현;김영이;조형균
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.11-11
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    • 2010
  • Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

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TiO2 Nanotubular Formation on Grade II Pure Titanium by Short Anodization Processing (Grade II 순수 타이타늄의 단시간 양극산화에 의한 TiO2 나노튜브 형성)

  • Lee, Kwangmin;Kim, Yongjae;Kang, Kyungho;Yoon, Duhyeon;Rho, Sanghyun;Kang, Seokil;Yoo, Daeheung;Lim, Hyunpil;Yun, Kwiduk;Park, Sangwon;Kim, Hyun Seung
    • Korean Journal of Materials Research
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    • v.23 no.4
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    • pp.240-245
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    • 2013
  • Electrochemical surface treatment is commonly used to form a thin, rough, and porous oxidation layer on the surface of titanium. The purpose of this study was to investigate the formation of nanotubular titanium oxide arrays during short anodization processing. The specimen used in this study was 99.9% pure cp-Ti (ASTM Grade II) in the form of a disc with diameter of 15 mm and a thickness of 1 mm. A DC power supplier was used with the anodizing apparatus, and the titanium specimen and the platinum plate ($3mm{\times}4mm{\times}0.1mm$) were connected to an anode and cathode, respectively. The progressive formation of $TiO_2$ nanotubes was observed with FE-SEM (Field Emission Scanning Electron Microscopy). Highly ordered $TiO_2$ nanotubes were formed at a potential of 20 V in a solution of 1M $H_3PO_4$ + 1.5 wt.% HF for 10 minutes, corresponding with steady state processing. The diameters and the closed ends of $TiO_2$ nanotubes measured at a value of 50 cumulative percent were 100 nm and 120 nm, respectively. The $TiO_2$ nanotubes had lengths of 500 nm. As the anodization processing reached 10 minutes, the frequency distribution for the diameters and the closed ends of the $TiO_2$ nanotubes was gradually reduced. Short anodization processing for $TiO_2$ nanotubes of within 10 minutes was established.